Results 111 to 120 of about 76,331 (301)

Field-Induced Resistive Switching in Metal-Oxide Interfaces

, 2004
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal ...
Baikalov, A., Chen, L., Chu, C. W., Cmaidalka, J., Jacobson, A. J., Sun, Y. Y., Tsui, S., Wang, Y. Q., Xue, Y. Y.   +8 more
core   +2 more sources

Additive Gaussian Process Regression for Predictive Design of High‐Performance, Printable Silicones

Advanced Engineering Materials, EarlyView.
A chemistry‐aware design framework for tuning printable polydimethylsiloxane (PDMS) for vat photopolymerization (VPP) is developed using additive Gaussian process (GP) modeling. Polymer network mechanics informs variable groupings, feasible formulation constraints, and interaction variables.
Roxana Carbonell, Martha Leach, Hongtao Song, Carolyn Seepersad   +3 more
wiley   +1 more source

Powder Optimization Strategies for Binder Jetting Printing of BaTiO3 and Ba0,6Sr0,4TiO3 Ceramics

Advanced Engineering Materials, EarlyView.
Powder optimization is investigated to enable binder jetting of BaTiO3 and Ba0.6Sr0.4TiO3 ferroelectric ceramics. The antagonistic relationship between flowability and binder compatibility is addressed through binder impregnation of granulated powders and fumed silica addition to fine powders.
Fanny Pruvost, Lionel Presmanes, Soléna Colin, Marie Vidal, Sophie Guillemet‐Fritsch   +4 more
wiley   +1 more source

Al–Cu Composite Casting of Laser‐Deoxidized Copper: Bonding, Interfacial Chemistry, and Thermal Conductivity

Advanced Engineering Materials, EarlyView.
This study investigates laser‐based oxide removal of Cu inserts in oxygen‐free conditions and examines long‐term oxidation kinetics and surface chemistry under different atmospheres via X‐ray photoelectron spectroscopy. Al–Cu compound casting with differently oxidized surfaces is performed, and intermetallic phase formation, morphology, and thermal ...
Timon Steinhoff, Finn‐Lennard Janthur, Sascha Zimmermann, Sarah Seffer, Jörg Hermsdorf, René Gustus, Ludger Overmeyer, Wolfgang Maus‐Friedrichs, Hans Jürgen Maier, Christian Klose   +9 more
wiley   +1 more source

Corrosion and Process Analysis of a Preoxidized MgO Recyclate‐Based Cermet Anode in Laboratory‐Scale Na‐Cryolite Molten Salt Electrolysis of Aluminum at 1000°C

Advanced Engineering Materials, EarlyView.
EDX elemental map of the pre‐oxidized MgO–steel cermet anode cross section after electrolysis. The development of inert anodes for aluminum electrolysis remains challenging due to the high corrosivity of cryolite‐based melts at 950°C–1000°C. This study investigates the corrosion and process behavior of a carbon‐free MgO–steel cermet anode derived from ...
Alexander Adamczyk, Farhan Hossain, Felipe A. Garcia Paz, Serhii Yaroshevskyi, Felix Drechsler, Daniel Vogt, Christos G. Aneziris, Alexandros Charitos   +7 more
wiley   +1 more source

Raman Spectroscopic Identification of Oxide Phases in a Corroded MgO–Steel Composite Anode Used in Aluminum Molten Salt Electrolysis

Advanced Engineering Materials, EarlyView.
Micro‐Raman spectroscopy is applied to characterize corrosion products in a recycled‐based MgO–316L steel composite anode after molten salt electrolysis. A depth‐dependent Fe–O/Fe–Al–O layer sequence of magnetite, hercynite, and an Al‐doped magnetite transition zone is identified.
Felix Drechsler, Serhii Yaroshevskyi, Alexander Adamczyk, Mahnaz Mehdizadehlima, Julia Richter, Cameliu Himcinschi, David Rafaja, Alexandros Charitos, Christos G. Aneziris, Jens Kortus   +9 more
wiley   +1 more source

Programmable ferroelectric tunnel memristor

Frontiers in Physics, 2014
We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling.
Andy eQuindeau, Dietrich eHesse, Marin eAlexe   +2 more
doaj   +1 more source

Memristive switching of MgO based magnetic tunnel junctions

, 2009
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state,
Krzysteczko, P., Reiss, G., Thomas, A.
core   +1 more source

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

Advanced Electronic Materials, 2018
Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang, Han‐Hyeong Choi, Sung Hoon Paik, Jai Kyeong Kim, Seungjun Chung, Jong Hyuk Park   +5 more
doaj   +1 more source

Anticorrelation between temperature and fluctuations in moderately damped Josephson junctions

, 2007
We study the influence of dissipation on the switching current statistics of moderately damped Josephson junctions. Different types of both low- and high- $T_c$ junctions with controlled damping are studied.
K. K. Likharev, M. Schlosshauer, P. Delsing, T. Bauch, T. Golod, V. M. Krasnov   +5 more
core   +1 more source