Results 121 to 130 of about 76,331 (301)

Interaction of Ladle Slag With Varying SiO2 Content and Recyclate‐Based MgO–C Refractories

Advanced Engineering Materials, EarlyView.
Ladle slags (CaO/Al2O3 = 1) with 1–20 wt% SiO2 were investigated in contact with industrial MgO–C refractories fabricated from fresh magnesia and 50 wt% recyclate. The sessile drop method at 1600°C reveals intensive gas formation, delayed slag infiltration in recyclate‐based samples, and, under high‐SiO2 slag, formation of a dense MgAl2O4‐rich ...
Anton Yehorov, Eldar Salpagarov, Anhelina Mospan, Till Manon Jannis Stadtmüller, Thomas Schemmel, Christos Georgios Aneziris, Olena Volkova   +6 more
wiley   +1 more source

Electrical switching properties of Ag2S/Cu3P under light and heat excitation

Heliyon
In this paper, we prepared and investigated the electrical switching behaviors of Cu3P/Ag2S heterojunction in the absence/presence of light/heat excitation. The structure exhibited bipolar memristor characteristics.
Xin Guo, Yanfei Lv, Manru Chen, Junhua Xi, Li Fu, Shichao Zhao   +5 more
doaj   +1 more source

Deterministic Detection of Single Ion Implantation

Advanced Engineering Materials, EarlyView.
Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead, Lok Kan Wan, Maddison Coke, Janet Jacobs, Nicholas F. L. Collins, Mark C. Rosamond, Richard J. Curry   +6 more
wiley   +1 more source

Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures

, 2014
The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated.
Chen, Feng, Chen, Pingfan, Gao, Guanyin, Tan, Xuelian, Wang, Lingfei, Wu, Wenbin, Xu, Haoran, Zhi, Bowen   +7 more
core   +1 more source

Complementary Resistive Switches.

, 2012
Size reduction of transistors has been the main reason for a successful development of computer systems over the last decades. Since the downscaling of transistors is assumed to come to an end within the next years, alternative technologies involving significantly less area consumption and an ongoing scaling potential are required.
openaire   +2 more sources

High‐Temperature Nanoindentation of Metals: Assessing Thermal Drift, Frame Compliance, and Chemical Composition Effects on the Reported Mechanical Properties

Advanced Engineering Materials, EarlyView.
Do not let thermal drift and instrument artifacts deceive high‐temperature nanoindentation results. We compare classical Oliver–Pharr and automatic image recognition analyses across steels and a Ni alloy to quantify these effects. Accounting for artifacts reveals systematic softening with temperature, while Cr and Ni additions boost resistance ...
Velislava Yonkova, Steffen Brinckmann, Ruth Schwaiger   +2 more
wiley   +1 more source

Recycling of NiTi Shape Memory Alloys: Fundamental and Technological Aspects of a Vacuum Induction Melting Processing Route

Advanced Engineering Materials, EarlyView.
The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee, Son Tung Mai, Sarath Menon, Braulio Gadiel Sánchez Ortega, Ralf Drautz, Alexander Kauffmann, Gunther Eggeler, Jan Frenzel   +7 more
wiley   +1 more source

Advanced memristive architectures based on nanomaterials for biomedical applications: a mini review

Frontiers in Nanotechnology
In recent years, the interest of science in big data sensing, storage and processing has been growing fast. Nano-materials have been widely used in resistive switching devices thanks to their distinguished properties. Furthermore, they provide nano-scale
Manel Bouzouita, Shashikant Pathak, Fakhreddine Zayer, Fakhreddine Zayer, Hamdi Belgacem, Ioulia Tzouvadaki   +5 more
doaj   +1 more source

Toward Knowledge‐Based Workflows: A Semantic Approach to Atomistic Simulations for Mechanical and Thermodynamic Properties

Advanced Engineering Materials, EarlyView.
Knowledge‐based atomistic workflows are presented for mechanical and thermodynamic properties. By coupling modular simulations with ontology‐aligned metadata and provenance, Fe case studies on elastic behavior, defects, thermal properties, and Hall–Petch strengthening reveal how FAIR, queryable, and reusable simulation data can be generated. Mechanical
Abril Azócar Guzmán, Hoang‐Thien Luu, Sarath Menon, Tilmann Hickel, Nina Merkert, Stefan Sandfeld   +5 more
wiley   +1 more source

Cluster-like resistive switching of SrTiO3:Nb surface layers

New Journal of Physics, 2013
The understanding of the resistive switching mechanisms in perovskites is of particular importance for the development of novel non-volatile memories. Nanoscale investigations recently revealed that in the model material SrTiO _3 a filamentary type of ...
C Rodenbücher, W Speier, G Bihlmayer, U Breuer, R Waser, K Szot   +5 more
doaj   +1 more source