Results 121 to 130 of about 18,321 (309)

Carboxylic‐Acid Functionalized Multiwalled Carbon Nanotube‐Alkane‐Based Resistive Temperature Sensor for Cold Chain Applications

open access: yesAdvanced Engineering Materials, EarlyView.
This study presents a reversible temperature sensor with high switching ratio, ∼103. The device is fabricated using PET‐ITO and carbon nanotube dispersions in alkane. Considering its application in cold chain logistics, a proof‐of‐concept with LED is showcased. Thus, a temperature drop below the threshold temperature (crystallization temperature of the
Sunil Kumar Behera   +8 more
wiley   +1 more source

Complementary Resistive Switches.

open access: yes, 2012
Size reduction of transistors has been the main reason for a successful development of computer systems over the last decades. Since the downscaling of transistors is assumed to come to an end within the next years, alternative technologies involving significantly less area consumption and an ongoing scaling potential are required.
openaire   +2 more sources

Anomalous resistive switching phenomenon [PDF]

open access: yes
Resistive switching was observed in Pt/SrTiO3/Pt capacitor devices. The switching depends on both the amplitude and polarity of the applied voltage and cannot be described as either bipolar or unipolar resistive switching. We term this behavior antipolar
Kwa KSK   +6 more
core  

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

open access: yesAdvanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham   +7 more
wiley   +1 more source

Protein-based Resistive Switching Memory with Configurable Switching Properties

open access: yes, 2017
Resistive switching memory (ReRAM) based on natural materials has received great attention as emerging memory devices due to flexible, low cost, biocompatible, and biodegradable properties.
LEE, JANG SIK, Sungjo Kim
core  

Resistive Switching Phenomena in LixCoO2 Thin Fillms

open access: yes, 2011
LGEP 2011 ID = 778International audienceA substantial resistive switching of LixCoO2 mixed-conductor thin films is observed for the first time.
Franger, Sylvain   +23 more
core   +1 more source

Additive Gaussian Process Regression for Predictive Design of High‐Performance, Printable Silicones

open access: yesAdvanced Engineering Materials, EarlyView.
A chemistry‐aware design framework for tuning printable polydimethylsiloxane (PDMS) for vat photopolymerization (VPP) is developed using additive Gaussian process (GP) modeling. Polymer network mechanics informs variable groupings, feasible formulation constraints, and interaction variables.
Roxana Carbonell   +3 more
wiley   +1 more source

Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

open access: yes, 2014
Exploring the role of electrode metals on the resistive switching properties of metal electrode/oxide/metal electrode sandwiched structures provides not only essential information to understand the underlying switching mechanism of the devices, but also ...
Ji, Z. H.   +12 more
core  

Powder Optimization Strategies for Binder Jetting Printing of BaTiO3 and Ba0,6Sr0,4TiO3 Ceramics

open access: yesAdvanced Engineering Materials, EarlyView.
Powder optimization is investigated to enable binder jetting of BaTiO3 and Ba0.6Sr0.4TiO3 ferroelectric ceramics. The antagonistic relationship between flowability and binder compatibility is addressed through binder impregnation of granulated powders and fumed silica addition to fine powders.
Fanny Pruvost   +4 more
wiley   +1 more source

Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films

open access: yesCrystals
Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a stacked
Kristjan Kalam   +5 more
doaj   +1 more source

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