Results 141 to 150 of about 18,321 (309)

Electromechanically tuned resistive switching device

, 2013
This is the first experimental demonstration of electromechanical resistive switching device.
Lijie Li
core   +1 more source

A Dislocation Perspective on Strength and Toughness in Ceramics

Advanced Engineering Materials, EarlyView.
Dislocations in ceramics enjoy a long but yet under‐appreciated history. The three research waves for dislocations in ceramics highlight the topic evolution over the last 90 years. This review focuses on the impact of dislocation on strength and toughness in ceramics.
Xufei Fang
wiley   +1 more source

Compatibility of Methacrylate Based Resins Controls Interfacial Failure and Toughness in 3D‐Printed Multimaterial Composites

Advanced Engineering Materials, EarlyView.
This work shows that the mechanical performance of multimaterial digital light processing (DLP) printed thermoset composites is governed by resin compatibility and interfacial design rather than spatial patterning alone. Brittle and ductile resin combinations produced premature interfacial failure, while graded interfaces and mechanically compatible ...
Ahmed M. H. Ibrahim, Li Meng, Ahmad R. Najafi, Nicolas J. Alvarez   +3 more
wiley   +1 more source

Resistively Switching Chalcogenides [PDF]

Advanced Functional Materials, 2015
Rainer Waser, Matthias Wuttig
openaire   +1 more source

Resistive Switching in Silicon-rich Silicon Oxide

, 2014
Over the recent decade, many different concepts of new emerging memories have been proposed. Examples of such include ferroelectric random access memories (FeRAMs), phase-change RAMs (PRAMs), resistive RAMs (RRAMs), magnetic RAMs (MRAMs), nano-crystal ...
Mehonic, A
core  

Electrified Damage in Motion Systems

Advanced Engineering Materials, EarlyView.
The electrified damage in motion systems is a fundamental framework presenting the degradation pathway arising from the coupling of electrical energy transport with mechanical contact and interfacial chemistry. The framework positions electrified damage as a distinct degradation regime with unique characteristic surface morphologies and failures of ...
M. Humaun Kabir, Angelina Nguyen, Hong Liang   +2 more
wiley   +1 more source

Resistive switching in silicon oxide-based systems

, 2010
Voltage-controlled resistive switching in various gap systems on SiO2 substrates is demonstrated. The nanosized gaps are made by several means using different materials including metals, semiconductors and amorphous carbon.
Yao, Jun
core  

Spin-coated silver nanocomposite resistive switching devices

, 2017
A simple two-terminal resistive switching device is fabricated on the basis of a silver-based nanocomposite by means of direct processing through spin-coating technique.
Chiappone, Annalisa, Pirri, Candido, Bejtka, Katarzyna, Bocchini, Sergio, Roppolo, Ignazio, Perrone, Denis, Ricciardi, Carlo, Chiolerio, Alessandro, Krishna Rajan, Krishna Rajan   +8 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source