Results 161 to 170 of about 9,065 (265)

Two‐Photon Grayscale Lithography (2GL) of High Mechanical and Optical Quality 3D Silica Glass Microstructures

Advanced Functional Materials, EarlyView.
Two‐photon grayscale lithography (2GL) enables high‐speed and precise 3D printing of thermolyzed silica glass microstructures with optical‐grade surface quality, high quality factors, and mechanical strength utilizing a custom‐made pre‐glass resist based on polyhedral oligomeric silsesquioxane (POSS) modified with a high‐sensitivity Norrish type II ...
Jonathan L. G. Schneider, Jiajie Liang, Paul Somers, Martin Wegener, Jens Bauer   +4 more
wiley   +1 more source

Coupling Light into Memristors: Advances in Halide Perovskite Resistive Switching and Neuromorphic Computing. [PDF]

Small Methods
Feng Z, Wang J, Chen F, Dong B, Ma X, Mei T, Yang N, Guan X, Hu L, Lin CH, Li Z, Wu T, Chu D.   +12 more
europepmc   +1 more source

Thermally Robust Spin–Orbit Torque Switching in Low‐Resistivity Mo‐Alloyed β‐W Heterostructures

Advanced Functional Materials, EarlyView.
Mo‐alloyed β‐W heterostructures exhibit enhanced spin‐orbit torque efficiency, reduced resistivity and switching current density, and reliable operation from −50 to +150°C. The optimized W87.3Mo12.7 device achieves high spin Hall conductivity with thermal robustness, highlighting its potential for energy‐efficient magnetic memory and automotive ...
Han Seok Ko, Hyun Ju Lee, Jeong Kyu Lee, Han Sol Kim, Min Seok Kim, Quynh Anh T. Nguyen, Sonny H. Rhim, Young Keun Kim   +7 more
wiley   +1 more source

Threshold Resistive Switching in Inorganic Lead-Free Cesium-Bismuth Iodide Perovskite for Neuron Emulation. [PDF]

ACS Appl Electron Mater
Loizos M, Chatzimanolis K, Anagnostou K, Rogdakis K, Kymakis E.   +4 more
europepmc   +1 more source

Catalytically Enhanced Near Room‐Temperature Hydrogen Sensing Using Pd‐ZnO Colloidal Crystals

Advanced Functional Materials, EarlyView.
Pd‐decorated ZnO colloidal crystal monolayers demonstrate excellent performance across a wide hydrogen concentration range at 33°C, with high selectivity and reproducible device fabrication. The sensors show strong responses even at low‐ppm H2 concentrations and an ultra‐low detection limit of 82 ppb, indicating their suitability for diverse hydrogen ...
Hamidah Alluhaybi, Samuel J. Ippolito, Chung Kim Nguyen, Durairaj Mahendiran, Michelle J. S. Spencer, Edwin L. H. Mayes, Billy James Murdoch, Jason Choi, Shamali De Silva, James Tardio, Adrian Trinchi, Ahmad E. Kandjani, Mohammad Al Kobaisi, Ylias Sabri   +13 more
wiley   +1 more source

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing. [PDF]

Chem Rev
Ielmini D, Pedretti G.
europepmc   +1 more source

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

Coexistence of WORM and RRAM Resistive Switching in Coumarin Derivatives: A Comprehensive Performance Analysis. [PDF]

ACS Omega
Deb R, Banik H, De UC, Bhattacharjee D, Alibrahim KA, Alodhayb AN, Hussain SA.   +6 more
europepmc   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

The Influence of the Ar/N₂ Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]

Materials (Basel)
Jeżak P, Seweryn A, Klepka M, Mroczyński R.   +3 more
europepmc   +1 more source