Results 161 to 170 of about 490,893 (298)

Resistive switching memristors: structures, materials, fabrication techniques, and process challenges for VLSI integration. [PDF]

RSC Adv
Singla R, Pant D, Nautiyal P, Painuly A.
europepmc   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Investigation of lead-free double perovskite Cs₂CeAgCl₆ for resistive switching and optoelectronic applications. [PDF]

Sci Rep
Majid A, Ahmed S, Maqbool N, Noori N, Nasir M, Imtiaz S, Al-Harbi FF, Abdulakimov G, Ahmad Y, Khan MI.   +9 more
europepmc   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Study on Electrical Behavior of TiO₂ and ZnO Nanostructures: Resistive Switching and State Retention Under Pressure and Temperature Conditions. [PDF]

Nanomaterials (Basel)
Patiño CE, Nuñez DE, Porras Ramírez Y, Calderón JA, Quiroz HP, Dussan A.   +5 more
europepmc   +1 more source

Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

Advanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han, Donghwa Lee, Hyeonse Kim, Hyoik Jang, Sein Chung, Geun Yeol Bae, Eunho Lee   +6 more
wiley   +1 more source

Thermally Enhanced Dual-Mode Resistive Switching via Interfacial Strain Engineering in SmNiO₃/PMN-PT Heterostructures. [PDF]

Materials (Basel)
Yang J, Du Q.
europepmc   +1 more source

Two‐Photon Grayscale Lithography (2GL) of High Mechanical and Optical Quality 3D Silica Glass Microstructures

Advanced Functional Materials, EarlyView.
Two‐photon grayscale lithography (2GL) enables high‐speed and precise 3D printing of thermolyzed silica glass microstructures with optical‐grade surface quality, high quality factors, and mechanical strength utilizing a custom‐made pre‐glass resist based on polyhedral oligomeric silsesquioxane (POSS) modified with a high‐sensitivity Norrish type II ...
Jonathan L. G. Schneider, Jiajie Liang, Paul Somers, Martin Wegener, Jens Bauer   +4 more
wiley   +1 more source

Interfacial Engineering of MoS₂ Thin Films for Wettability-Dependent Resistive Switching and Neuromorphic Behaviors. [PDF]

Nanomaterials (Basel)
Yang Y, Yu Y, Cui C, Liu X, Li Y, Liu P, Hui F.   +6 more
europepmc   +1 more source

Resistive Switching Element and Use Thereof

A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer ...
De Micheli, Giovanni, Demirci, Tugba, Sacchetto, Davide, Bobba, Shashi Kanth, Gaillardon, Pierre-emmanuel Julien Marc, Leblebici, Yusuf   +5 more
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