Results 161 to 170 of about 18,321 (309)

Resistive Switching in Pt/TiO2/Pt

, 2008
Recently, the resistive switching behavior in TiO2 has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO2 shows characteristic non-volatile resistive switching behavior, i.e.
Jeong, Doo Seok, Jeong, D. S.
core  

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Resistive Switching Element and Use Thereof

A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer ...
De Micheli, Giovanni, Demirci, Tugba, Sacchetto, Davide, Bobba, Shashi Kanth, Gaillardon, Pierre-emmanuel Julien Marc, Leblebici, Yusuf   +5 more
core  

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Receptor‐Free Identification of Toxic Gases Enabled by Hygroscopic Aqueous Salt Films

Advanced Functional Materials, EarlyView.
Water as a gas sensor coating sounds impossible—until it stops evaporating. Here, hygroscopic salt solutions (LiCl, LiBr, H3PO4) form non‐drying aqueous films on CNT chemiresistors under ambient air. Gases partition into these liquid layers, sometimes transforming into water, and generate salt‐specific resistance fingerprints across a four‐channel ...
Seongwoo Lee, Yun‐Tae Kim, Hwarang Choi, Sanghwan Park, Seongyeop Lim, Chang Young Lee   +5 more
wiley   +1 more source

Agar-Based Resistive Switching Memory for Neuromorphic Applications. [PDF]

ACS Omega
Chen HC, Kao IC, Lai KJ, Chen CY, Chang YC.   +4 more
europepmc   +1 more source

Resistive switching phenomena for resistive random access memory applications

, 2013
The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible ...
Sim, Raymond Keng Lim.
core  

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Investigation of Resistive Switching in Cu/a-SiC/P⁺-Si Structure for Multilevel Nonvolatile Memory Applications. [PDF]

Micromachines (Basel)
Shao H, Zhu X, Zhang X, Zheng W, Zhang L, Chen L.   +5 more
europepmc   +1 more source