Results 181 to 190 of about 490,893 (298)
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Investigation of Resistive Switching in Cu/a-SiC/P<sup>+</sup>-Si Structure for Multilevel Nonvolatile Memory Applications. [PDF]
Shao H +5 more
europepmc +1 more source
A multicomponent supramolecular hydrogel integrating cell‐adhesive and antibacterial peptides within an alginate‐cellulose nanofibril matrix is developed. Peptide co‐assembly simultaneously strengthens the hydrogel network, improves extrusion printability, and imparts cell‐adhesive and antibacterial functions, offering a versatile platform for ...
Mor Tsuriano‐Zernichov +4 more
wiley +1 more source
Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO<sub>2</sub>/Si/SiO<sub>2</sub> Stack Layers for Resistive Switching Memories. [PDF]
Morales-Sánchez A +9 more
europepmc +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Liquid Resistive Switching Devices with Printable Electrodes. [PDF]
Nguyen VC.
europepmc +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory. [PDF]
Lee Y, Kim S, Kim S, Kim S, Cho S.
europepmc +1 more source
A gradient‐engineered all‐paper sensor is fabricated by integrating MXene and in situ grown AgNPs within hierarchical cellulose networks. The device breaks the sensitivity–detection range trade‐off through cascaded conductive pathways, enabling ultrahigh pressure sensitivity, humidity–pressure decoupled dual‐mode sensing, and outstanding EMI shielding,
Ao Li +7 more
wiley +1 more source
Phase-Change Materials for Volatile Threshold Resistive Switching and Neuronal Device Applications. [PDF]
Chen H, Ravichandran J.
europepmc +1 more source

