Results 201 to 210 of about 490,893 (298)

Resistive Switching Behavior of Sol-Gel-Processed ZnMgO/ZnO Bilayer in Optoelectronic Devices. [PDF]

Nanomaterials (Basel)
Shin HS, Kim DH, Lee D, Kim J.
europepmc   +1 more source

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

Advanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll, Valentino Jadriško, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatović, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtěch Kundrát, Jakub Zalesak, Jana Vejpravová, Martin Žáček, Szymon J. Zelewski, Nikolas Antonatos, Christoph Gadermaier, José J. Baldoví, Zdeněk Sofer   +17 more
wiley   +1 more source

Hysteresis in Perovskite Devices: Understanding the Abrupt Resistive Switching Mechanism. [PDF]

ACS Energy Lett
Alvarez AO, de Boer JJ, Sonneveld L, Bleiji Y, Alarcón-Lladó E, Ehrler B.   +5 more
europepmc   +1 more source

Microscale Patterning of Ultrahigh‐Viscosity Metallic‐Polymer Composites via Embedded Droplet Writing

Advanced Functional Materials, EarlyView.
A hybrid additive manufacturing platform integrates direct droplet writing of metallic composite with VAT photopolymerization to fabricate architected soft magnetic composites. This approach enables microscale patterning of high‐viscosity materials for programmable actuators, adaptive fluidic devices, and switchable adhesives, offering tunable ...
Yeowon Yoon, Jian Ni, Sungmo Park, Yang Xu, Yong Chen   +4 more
wiley   +1 more source

Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]

ACS Omega
Fedotov MI, Klyukina EV, Vankaev AS, Znamenskii AG, Koveshnikov SV.   +4 more
europepmc   +1 more source

Advances in Solution‐Processed Textile Triboelectric Nanogenerators: Ink Formation, Processing Strategies, Applications, and Challenges

Advanced Functional Materials, EarlyView.
Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley   +1 more source

Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa₂Cu₃O_<i>x</i> with Excess Cu Addition. [PDF]

ACS Appl Mater Interfaces
Feighan J, Kim I, Kursumovic A, Bedford T, Choudhury A, Lu J, Dixon SC, Wang H, MacManus Driscoll JL, Hellenbrand M.   +9 more
europepmc   +1 more source

Autonomous Multi‐Objective Nanoscale Characterization of Combinatorial (Al, Sc, B)N Films Reveals Composition‐Dependent Ferroelectric Regimes

Advanced Functional Materials, EarlyView.
Autonomous scanning probe microscopy and multi‐objective Bayesian optimization navigate a ternary (Al,Sc,B)N combinatorial library. Registered photoluminescence, electron‐probe compositional mapping, and X‐ray diffraction connect local electromechanical function to defect‐sensitive emission, composition, and crystal structure.
Yu Liu, Aditya Raghavan, Utkarsh Pratiush, Ian Mercer, Pochun Hsieh, Albert Suceava, Chih‐Yu Lee, Edgar Dimitrov, Mauricio Terrones, Ichiro Takeuchi, Venkatraman Gopalan, Jon‐Paul Maria, Sergei V. Kalinin   +12 more
wiley   +1 more source

Analog Resistive Switching Phenomena in Titanium Oxide Thin-Film Memristive Devices. [PDF]

Materials (Basel)
Islam K, Sultana R, Mroczyński R.
europepmc   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source