Results 191 to 200 of about 76,331 (301)

Interstitial Ag⁺ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites. [PDF]

Nanomaterials (Basel)
Qin H, Wang Z, Li Q, Lin J, Lu D, Huang Y, Gao W, Wang H, Bi C.   +8 more
europepmc   +1 more source

Multiplex Modular Nanorobotic Systems with Catalytic Activity under Magnetic Navigation

Advanced Functional Materials, EarlyView.
We present modular nanorobots composed of a magnetic propulsion module and different extension modules carrying functional activities, assembled via DNA base pairing. The system integrates propulsion, optical tracking, enzymatic catalysis, and cell docking in a programmable manner.
Voichita Mihali, Xinan Huang, Lucie Motyckova, Nicolas Moreno Gomez, Michal Skowicki, Cora‐Ann Schoenenberger, Peer Fischer, Cornelia G. Palivan   +7 more
wiley   +1 more source

Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]

RSC Adv
Xiao A, Zhao L, Yang Y, Jin C, Yang X, Ma L, Tian F, Hu W, Huang Z, Gu H.   +9 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors. [PDF]

ACS Appl Electron Mater
Antola A, Laaksonen J, Huhtinen H, Angervo I, Granroth S, Schulman A, Laukkanen P, Paturi P.   +7 more
europepmc   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Mott resistive switching initiated by topological defects. [PDF]

Nat Commun
Milloch A, Figueruelo-Campanero I, Hsu WF, Mor S, Mellaerts S, Maccherozzi F, Veiga LSI, Dhesi SS, Spera M, Seo JW, Locquet JP, Fabrizio M, Menghini M, Giannetti C.   +13 more
europepmc   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Coupling Light into Memristors: Advances in Halide Perovskite Resistive Switching and Neuromorphic Computing. [PDF]

Small Methods
Feng Z, Wang J, Chen F, Dong B, Ma X, Mei T, Yang N, Guan X, Hu L, Lin CH, Li Z, Wu T, Chu D.   +12 more
europepmc   +1 more source

Engineering Hydrogen‐Down Water Configurations for Ampere‐Level Electrochemical CO2 Reduction to Formate

Advanced Functional Materials, EarlyView.
Electrochemical CO2 reduction (ECR) to formate is a promising route for sustainable chemical production. Herein, we report the synthesis catalysed byBi‐HfO2@C. The AIMD simulations, DFT calculations, and in situ SEIRAS measurements show that the modification of HfO2 on the Bi surface steers the interfacial water to adopt a favorable hydrogen‐down (OH2↓)
Xiao‐Dong Guo, Shao‐Qing Liu, Jia‐Yi Wu, Qi‐Rui Wen, Xiaoxiao Wei, Shu‐Wen Wu, Xian‐Zhu Fu, Jing‐Li Luo   +7 more
wiley   +1 more source