Results 221 to 230 of about 9,065 (265)
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The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts., 2006
Summary form only given. This paper re-examines the assumptions used in the Braginskii arc expansion model when it is applied, as by Martin, to water breakdown channels. In particular the electrical conductivity of water in the channel is allowed to vary with temperature and a more realistic radiation estimate is adopted.
L.K. Warne, J.M. Lehr, R.E. Jorgensen
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Summary form only given. This paper re-examines the assumptions used in the Braginskii arc expansion model when it is applied, as by Martin, to water breakdown channels. In particular the electrical conductivity of water in the channel is allowed to vary with temperature and a more realistic radiation estimate is adopted.
L.K. Warne, J.M. Lehr, R.E. Jorgensen
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Switching control of resistive switching devices
Applied Physics Letters, 2010Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and ...
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On the Influence of Switch Resistances on Switched-Capacitor Converter Losses
IEEE Transactions on Industrial Electronics, 2012The contribution of switch resistances to the losses in switched-capacitor converters (SCC) is reevaluated. The results reaffirm the crucial role that the switch resistances play in the design of open-loop and regulated SCC.
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Optimal switch resistances in Switched Capacitor Converters
2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel, 2010Switched Capacitor Converters (SCC) losses are analyzed and the rules for the selection of SCC parameters (such as switch resistances, capacitors values and switching frequency) to meet specific efficiency requirements, are developed. This is done by first applying an advanced methodology for calculating the equivalent resistance (R e ) of the SCC in ...
Michael Evzelman, Sam Ben-Yaakov
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Reset Switching Probability of Resistive Switching Devices
IEEE Electron Device Letters, 2011The reset switching probability of resistive switching devices is characterized in array testing. The measured switching probability can be quantitatively explained based on the mechanism of a thermally activated reset process. An analytical model of switching probability is developed to describe the dependence of reset probability on operation ...
null An Chen, null Ming-Ren Lin
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Resistance Switching in Electrodeposited Magnetite Superlattices
Journal of the American Chemical Society, 2010Defect-chemistry magnetite superlattices and compositional superlattices in the magnetite/zinc ferrite system are electrodeposited as epitaxial films onto single-crystal Au(111). The defect-chemistry superlattices have alternating nanolayers with different Fe(III)/Fe(II) ratios, whereas the compositional superlattices have alternating nanolayers with ...
Jay A, Switzer +5 more
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OxRAM Resistive Switching for DR Improvement
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018On-chip presence of emerging nonvolatile resistive memory devices provide opportunities to perform different types of computing and storage operations with several advantages. A unique application of oxide based resistive memory (OxRAM) devices in CMOS Image Sensors (CIS) for improvement of pixel dynamic range (DR) is proposed in this paper. In CIS, DR
Ashwani Kumar, Mukul Sarkar, Manan Suri
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Switching in Resistance Tapchangers
2020Tapchangers are now made by several manufacturers around the world. Some designs are new, but some are decades old. Materials, designs, and physical arrangements differ. It is not possible, nor is it necessary to include in a book of this kind every execution.
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Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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