Advanced Functional Materials, EarlyView.Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices. [PDF]
ACS Appl Mater InterfacesÁlvarez-Martínez V +5 more
europepmc +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
Advanced Functional Materials, EarlyView.The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Memristive tonotopic mapping with volatile resistive switching memory devices. [PDF]
Nat CommunMilozzi A, Ricci S, Ielmini D.
europepmc +1 more source
Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication. [PDF]
Nanomaterials (Basel)Saenko AV +6 more
europepmc +1 more source
Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory. [PDF]
J Phys Chem LettGonzales C +3 more
europepmc +1 more source
Interfacial Resistive Switching of Niobium-Titanium Anodic Memristors with Self-Rectifying Capabilities. [PDF]
Nanomaterials (Basel)Knapic D +5 more
europepmc +1 more source
Nanoscale Titanium Oxide Memristive Structures for Neuromorphic Applications: Atomic Force Anodization Techniques, Modeling, Chemical Composition, and Resistive Switching Properties. [PDF]
Nanomaterials (Basel)Avilov VI +5 more
europepmc +1 more source