Results 241 to 250 of about 18,321 (309)
Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics. [PDF]
Adiba A, Meitei PN, Ahmad T.
europepmc +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Residual magnetization induces pronounced mechanical anisotropy in ultra‐soft magnetorheological elastomers, shaping deformation and actuation even without external magnetic fields. This study introduces a computational‐experimental framework integrating magneto‐mechanical coupling into topology optimization for designing soft magnetic actuators with ...
Carlos Perez‐Garcia +3 more
wiley +1 more source
Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory. [PDF]
Wu R +6 more
europepmc +1 more source
Positively Charged Polymer‐Brush MOFs for Large‐Area, Pressure‐Resistant Gas Separation Membranes
A universal POPA strategy enables positively charged polymer‐brush MOFs with self‐adaptive interfacial interlocking to resist aggregation under fast processing. This design ensures seamless dispersion within large‐area selective layers, achieving 1 m‐wide roll‐to‐roll fabrication of pressure‐resistant MMCMs with tunable CO2 separation performance ...
Yi Yang +11 more
wiley +1 more source
Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications. [PDF]
Kim T, Lee D, Chae M, Kim KH, Kim HD.
europepmc +1 more source
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang +20 more
wiley +1 more source
Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires. [PDF]
Zhang J +19 more
europepmc +1 more source
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho +3 more
wiley +1 more source
Correlation between organic residuals of green synthesized nanoparticles and resistive switching behavior. [PDF]
Duong TBN +9 more
europepmc +1 more source

