Results 251 to 260 of about 76,331 (301)
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A complementary resistive switching neuron
Nanotechnology, 2022Abstract The complementary resistive switching (CRS) memristor has originally been proposed for use as the storage element or artificial synapse in large-scale crossbar array with the capability of solving the sneak path problem, but its usage has mainly been hampered by the inherent destructiveness of the read ...
Xinxin Wang, Huanglong Li
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A LightâControlled Resistive Switching Memory
Advanced Materials, 2012 Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied.
Mariana Ungureanu +2 more
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Resistance switching for RRAM applications
Science China Information Sciences, 2011Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM).
Frederick T. Chen +13 more
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Complementary Resistive Switch Sensing
2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2018This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature.
Pellegrini D. +3 more
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Switching Characteristics of Antiparallel Resistive Switches
IEEE Electron Device Letters, 2012Antiparallel resistive switches exhibit - characteristics of various types, depending on the properties of individual switches and applied compliance-current levels. When one switch is on and the other is off, an application of voltage of opposite polarity may lead to the following: 1) rupture of the first switch followed by a bridge formation in the ...
Tong Liu +3 more
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Science, 2019
Antibiotic Resistance Clonal bacterial colonies will often grow dissimilar patches, similar to a tortoiseshell pattern. These differing phenotypes arise by reversible mechanisms called phase variation. Jiang et al. developed an algorithm to survey bacterial genomes for invertible promoters that cause phase variation.
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Antibiotic Resistance Clonal bacterial colonies will often grow dissimilar patches, similar to a tortoiseshell pattern. These differing phenotypes arise by reversible mechanisms called phase variation. Jiang et al. developed an algorithm to survey bacterial genomes for invertible promoters that cause phase variation.
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IEEE Transactions on Device and Materials Reliability, 2013
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
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This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
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The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts., 2006
Summary form only given. This paper re-examines the assumptions used in the Braginskii arc expansion model when it is applied, as by Martin, to water breakdown channels. In particular the electrical conductivity of water in the channel is allowed to vary with temperature and a more realistic radiation estimate is adopted.
L.K. Warne, J.M. Lehr, R.E. Jorgensen
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Summary form only given. This paper re-examines the assumptions used in the Braginskii arc expansion model when it is applied, as by Martin, to water breakdown channels. In particular the electrical conductivity of water in the channel is allowed to vary with temperature and a more realistic radiation estimate is adopted.
L.K. Warne, J.M. Lehr, R.E. Jorgensen
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Switching control of resistive switching devices
Applied Physics Letters, 2010Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and ...
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On the Influence of Switch Resistances on Switched-Capacitor Converter Losses
IEEE Transactions on Industrial Electronics, 2012The contribution of switch resistances to the losses in switched-capacitor converters (SCC) is reevaluated. The results reaffirm the crucial role that the switch resistances play in the design of open-loop and regulated SCC.
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