Results 271 to 280 of about 18,321 (309)
Some of the next articles are maybe not open access.
Optimal switch resistances in Switched Capacitor Converters
2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel, 2010Switched Capacitor Converters (SCC) losses are analyzed and the rules for the selection of SCC parameters (such as switch resistances, capacitors values and switching frequency) to meet specific efficiency requirements, are developed. This is done by first applying an advanced methodology for calculating the equivalent resistance (R e ) of the SCC in ...
Michael Evzelman, Sam Ben-Yaakov
openaire +1 more source
Reset Switching Probability of Resistive Switching Devices
IEEE Electron Device Letters, 2011The reset switching probability of resistive switching devices is characterized in array testing. The measured switching probability can be quantitatively explained based on the mechanism of a thermally activated reset process. An analytical model of switching probability is developed to describe the dependence of reset probability on operation ...
null An Chen, null Ming-Ren Lin
openaire +1 more source
Resistance Switching in Electrodeposited Magnetite Superlattices
Journal of the American Chemical Society, 2010Defect-chemistry magnetite superlattices and compositional superlattices in the magnetite/zinc ferrite system are electrodeposited as epitaxial films onto single-crystal Au(111). The defect-chemistry superlattices have alternating nanolayers with different Fe(III)/Fe(II) ratios, whereas the compositional superlattices have alternating nanolayers with ...
Jay A, Switzer +5 more
openaire +2 more sources
OxRAM Resistive Switching for DR Improvement
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018On-chip presence of emerging nonvolatile resistive memory devices provide opportunities to perform different types of computing and storage operations with several advantages. A unique application of oxide based resistive memory (OxRAM) devices in CMOS Image Sensors (CIS) for improvement of pixel dynamic range (DR) is proposed in this paper. In CIS, DR
Ashwani Kumar, Mukul Sarkar, Manan Suri
openaire +1 more source
AN ELECTRICALLY OPERATED SKIN RESISTANCE SWITCH
Psychophysiology, 1971ABSTRACTA touch operated switch is described that uses a simple skin resistance detection circuit. This ‘isometric push‐button” type switch has no moving parts, is noiseless, and absorbs the minimum of energy from the subject. It was primarily designed for psychophysiological experiments where an operant response is required.
L, Macpherson +2 more
openaire +2 more sources
Resistive Switching Behavior in Ferroelectric Heterostructures
Small, 2019AbstractResistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under
Zhan Jie Wang, Yu Bai
openaire +2 more sources
Versatile resistive switching in niobium oxide
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016Resistive switching devices have a high potential for nonvolatile memories and circuit applications. This paper gives a review of the different switching modes in niobium oxide. Abrupt memory switching, threshold switching with or without memory switching and analog switching can be obtained by controlling the stoichiometry of the layer stack either ...
T. Mikolajick +4 more
openaire +1 more source
Switching in Resistance Tapchangers
2020Tapchangers are now made by several manufacturers around the world. Some designs are new, but some are decades old. Materials, designs, and physical arrangements differ. It is not possible, nor is it necessary to include in a book of this kind every execution.
openaire +1 more source
Resistive Switching Characteristics of ZnO Nanowires
Journal of Nanoscience and Nanotechnology, 2014Binary transition metal oxides such as ZnO, TiO2, and MnO; and their various structures such as thin film, nanowire, and nanoparticle assembly; have been widely investigated for use in insulators in resistive random access memory (ReRAM), considered a next-generation nonvolatile memory device. Among the various driving mechanisms of resistive switching
Yoo, Eun Ji +4 more
openaire +3 more sources
Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
openaire +2 more sources