Results 41 to 50 of about 16,903,176 (225)

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Nanoscale Research Letters, 2022
Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses.
Chandreswar Mahata, Muhammad Ismail, Myounggon Kang, Sungjun Kim   +3 more
doaj   +1 more source

Modelling and mechanism of Resistive Random Access Memory (RRAM)

, 2023
openLe memorie RRAM (Resistive Random Access Memories) hanno recentemente mostrato caratteristiche eccezionali come alta scalabilità, alta velocità, alta densità e funzionamento a bassa energia.
TOMAIUOLI, MARCO
core  

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source

Quantum Dots for Resistive Switching Memory and Artificial Synapse

Nanomaterials
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim   +2 more
doaj   +1 more source

A Finite Element Model for Bipolar Resistive Random Access Memory

, 2014
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects.
Choi, Woo Young, Park, Young-Kwan, Lee, Kwangseok, Lee, Keun-Ho, Kim, Kwanyong   +4 more
core   +1 more source

Polarity-Controlled Coexistence of Electrochemical Metallization and Valence Change Mechanisms in a Unified Metal Halide Perovskite Memristor. [PDF]

Adv Sci (Weinh)
Electrochemical metallization and valence change mechanisms are shown to coexist within a single metal halide perovskite memristor, selectively activated by simply reversing the electroforming voltage polarity. Ag‐driven switching delivers low operating voltages and high endurance, while intrinsic ion migration yields superior retention and resistance ...
Fernandez-Guillen I, Solis OE, Betancur PF, Abargues R, Boix PP.   +4 more
europepmc   +2 more sources

A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

, 2017
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation ...
Zhang, Haizhong, Haizhong Zhang, null null   +2 more
core   +1 more source

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Materials Research Letters, 2019
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the ...
Gang Niu, Pauline Calka, Peng Huang, Sankaramangalam Ulhas Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Jinfeng Kang, Markus Andreas Schubert, Florian Bärwolf, Wei Ren, Zuo-Guang Ye, Eduardo Perez, Christian Wenger, Lambert Alff, Thomas Schroeder   +16 more
doaj   +1 more source

Current pulse generator: A circuit for programming RRAM in current mode [PDF]

APL Materials
Switching uniformity, as a major challenge, hinders the practical implementation of resistive random access memory (RRAM) in memory application. Operating RRAM in current mode is proposed as an efficient method to improve programming schemes accuracy ...
B. Zhang, P. Gibertini, M. Akbari, E. Covi   +3 more
doaj   +1 more source

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer

Nanomaterials, 2022
The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics.
Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin, Yeong-Her Wang   +4 more
doaj   +1 more source