Results 41 to 50 of about 14,872,237 (221)

Effect of Hydrogen Annealing on Performances of BN-Based RRAM

Nanomaterials, 2023
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
doaj   +1 more source

Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement

AIP Advances, 2013
The refractory transition metal nitride (TMN) film Hafnium nitride (HfNx) was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/metal oxide/ HfNx (bottom) sandwich structure.
Qigang Zhou, Jiwei Zhai
doaj   +1 more source

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

IEEE Access, 2020
The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices.
Jianxun Sun, Yuan Bo Li, Yiyang Ye, Jun Zhang, Gang Yih Chong, Juan Boon Tan, Zhen Liu, Tupei Chen   +7 more
doaj   +1 more source

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor [PDF]

, 2012
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates ...
Paulo R. F. Rocha, Asal Kiazadeh, Qian Chen 0025, Henrique L. Gomes   +3 more
openaire   +2 more sources

Recent Advances in Flexible Resistive Random Access Memory

, 2022
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Zuohui Xu, Rihui Yao, Muyun Li, Honglong Ning, Dongxiang Luo, Tian Qiu, Xiao Fu, Peng Tang, Junlong Chen, Junbiao Peng   +9 more
core   +1 more source

Modelling and mechanism of Resistive Random Access Memory (RRAM)

, 2023
openLe memorie RRAM (Resistive Random Access Memories) hanno recentemente mostrato caratteristiche eccezionali come alta scalabilità, alta velocità, alta densità e funzionamento a bassa energia.
TOMAIUOLI, MARCO
core  

Conductance quantization in resistive random access memory [PDF]

, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM ...
Liu, Ming, Lv, Hangbing, Chen Hu, Jiao Teng, Liu, Yang, Hu, Chen, Hangbing Lv, Yang Liu, Suñé, Jordi, Shibing Long, Liu, Qi, Yang Li, Ming Liu, Li, Yang, Jordi Suñé, Teng, Jiao, Long, Shibing, Qi Liu   +17 more
core   +1 more source

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Nanoscale Research Letters, 2022
Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses.
Chandreswar Mahata, Muhammad Ismail, Myounggon Kang, Sungjun Kim   +3 more
doaj   +1 more source

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source

Quantum Dots for Resistive Switching Memory and Artificial Synapse

Nanomaterials
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim   +2 more
doaj   +1 more source