Results 51 to 60 of about 1,297 (189)

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices [PDF]

Журнал нано- та електронної фізики, 2016
In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
T.D. Dongale, K.V. Khot, S.V. Mohite, S.S. Khandagale, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat   +12 more
doaj   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

Effects of Sm₂O₃ and V₂O₅ Film Stacking on Switching Behaviors of Resistive Random Access Memories

Crystals, 2019
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen   +2 more
doaj   +1 more source

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

Scientific Reports, 2020
Biological neural networks outperform current computer technology in terms of power consumption and computing speed while performing associative tasks, such as pattern recognition.
Finn Zahari, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, Hermann Kohlstedt, Christian Wenger, Martin Ziegler   +5 more
doaj   +1 more source

Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

Nanotechnology Reviews, 2021
Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties.
Cheong Kuan Yew, Tayeb Ilias Ait, Zhao Feng, Abdullah Jafri Malin   +3 more
doaj   +1 more source

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

Advanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park, Jaewoo Choi, Gigon Nam, Junsu Yu, Donghyun Ryu, Jung‐Kyu Lee, Sungjoon Kim, Sungjun Kim   +7 more
wiley   +1 more source

Glucose-based resistive random access memory for transient electronics

Journal of Information Display, 2019
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim   +3 more
doaj   +1 more source