Results 71 to 80 of about 14,872,237 (221)

Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications [PDF]

, 2019
With increasing demand for high-density memory applications, alternative memory technology has been intensively investigated for replacing conventional charge-based flash memory. Among the emerging memory technology, resistive random-access memory (RRAM)
Chen, Ying-Chen
core   +1 more source

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

, 2011
This report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array
Koeng Su Lim, Jung Won Seo, Seung Jae Baik, Sang Jung Kang   +3 more
core   +1 more source

Analog Resistive Switching in Reduced Graphene Oxide and Chitosan‐Based Bio‐Resistive Random Access Memory Device for Neuromorphic Computing Applications

, 2022
Bio-resistive random access memory (Bio-RRAM) devices are important because they are biocompatible and biodegradable. Herein, analog unipolar resistive switching and bipolar resistive switching in chitosan and reduced graphene oxide + chitosan (RGO ...
Jetty, Prabana, Jammalamadaka, S Narayana, Sahu, Dwipak Prasad   +2 more
core   +1 more source

Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

, 2011
We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process.
Ryoo, Kyung-Chang, Hongsik Jeong, Jeong, Hongsik, Park, Byung-Gook, Kyung-Chang Ryoo, Jeong-Hoon Oh, Oh, Jeong-Hoon, Byung-Gook Park, Sunghun Jung, Jung, Sunghun   +9 more
core   +1 more source

A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

, 2017
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation ...
Zhang, Haizhong
core   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Effects of Sm₂O₃ and V₂O₅ Film Stacking on Switching Behaviors of Resistive Random Access Memories

Crystals, 2019
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen   +2 more
doaj   +1 more source

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

Scientific Reports, 2020
Biological neural networks outperform current computer technology in terms of power consumption and computing speed while performing associative tasks, such as pattern recognition.
Finn Zahari, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, Hermann Kohlstedt, Christian Wenger, Martin Ziegler   +5 more
doaj   +1 more source

Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

Nanotechnology Reviews, 2021
Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties.
Cheong Kuan Yew, Tayeb Ilias Ait, Zhao Feng, Abdullah Jafri Malin   +3 more
doaj   +1 more source

Glucose-based resistive random access memory for transient electronics

Journal of Information Display, 2019
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim   +3 more
doaj   +1 more source