Results 91 to 100 of about 14,872,237 (221)
Memristive Non-Volatile Memory Based on Graphene Materials
Micromachines, 2020 Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in ...
Zongjie Shen +8 more
doaj +1 more source
Array‐Level Characterization of Cryogenic RRAM
Advanced Electronic Materials, EarlyView.This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu +7 more
wiley +1 more source
Investigation of resistive random-accesss memory (RRAM) materials and devices
, 2019 An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other ...
Sim, Wei Kiat
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Study on Resistive Switching Random Access Memory (RRAM) for synapse device and Neuromorphic system
, 2015 MasterRecently, the current memory Silicon-based Flash memory technology are rapidly developed. However, Flash memory is faced with limitation such as low operation speed, poor endurance, and high write voltage.
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Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0
, 2019 The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).
Francesco Maria Puglisi +2 more
core +1 more source
Low-Rank Compensation in Hybrid 3D-RRAM/SRAM Computing-in-Memory System for Edge Computing
EngArtificial intelligence (AI) has made significant strides, with computing-in-memory (CIM) emerging as a key enabler for energy-efficient AI acceleration.
Weiye Tang +7 more
doaj +1 more source
Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials
Advanced Electronic Materials, EarlyView.RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki +3 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen +9 more
wiley +1 more source
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling
, 2016 In this paper we propose a compact model of Random Telegraph Noise in HfOx-based Resistive Random Access Memory devices. Starting from the physics of charge transport, we first focus on the RTN phenomenon in the two different resistive states (HRS and ...
PUGLISI, Francesco Maria +5 more
core +1 more source