Results 111 to 120 of about 16,903,176 (225)

Ultra‐Efficient Memristive Voltage‐Resistance Logic Framework With Integrated Readout Strategy Based on Hafnium Zirconium Oxide

Small Methods, EarlyView.
Spatiotemporal efficiency is a key concern in memristor‐based logic‐in‐memory architectures, where separate read operations to access resistance states fundamentally limit efficiency. This work demonstrates that logic outputs can be directly inferred from the intrinsic discharge dynamics of a two‐terminal memristive device.
Wonwoo Kho, Hyunjoo Hwang, Hyunjun Kim, Narim Lee, Dongjun Min, Dante Ahn, Jaeseok Kim, Chaerin Han, Dahee Jeong, Seho Cho, Minseo So, Hee Chul Lee, Seung‐Eon Ahn   +12 more
wiley   +1 more source

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

Ultralow‐Thermal‐Threshold CsPbBr3 Quantum Dot Memristor for Thermal‐Aware In‐Memory Computing With Physical Pruning

Advanced Computing, Volume 1, Issue 1, December 2026.
A CsPbBr3 perovskite quantum dot thermal‐threshold memristor (TTM) with an ultralow 50°C writing threshold, 105–106 on/off ratio, and a 0.28 V reversible erase is reported. A saliency‐driven smart mapping algorithm allocates high‐importance weights to cold regions and low‐importance weights to hotspots.
Shuaidi Wu, Yuezhong Lu, Wenkang Zhong, Qingwei Shi, Song He, Qinghua Sun, Xiaofeng Wang, Baochang Cheng, Jie Zhao   +8 more
wiley   +1 more source

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

, 2013
For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb2O5-x/NbOy RRAM.
Sadaf, SM, Liu, X, Hwang, H, Park, S, Kim, S, Lee, D, Cha, E, Jung, GY, Cha, Euijun, Park, Sangsu, Sadaf, Sharif Md., Jung, Gun-Young, Jung, Gun Young, Kim, Seonghyun, Lee, Daeseok, Hwang, Hyunsang, Liu, Xinjun   +16 more
core   +1 more source

Noise and Drift Models for Protonic ECRAM and Their Impact on Analog In‐Memory Computing

Advanced Computing, Volume 1, Issue 1, December 2026.
Read noise and conductance drift of protonic electrochemical random‐access memory (ECRAM) are characterized and described using physics‐informed device models. These models connect proton transport and measured current fluctuations to analog in‐memory computing (AIMC) performance.
Xin Su, Haoran Liu, Qing Cao, Ning Li
wiley   +1 more source

Study on Resistive Switching Random Access Memory (RRAM) for synapse device and Neuromorphic system

, 2015
MasterRecently, the current memory Silicon-based Flash memory technology are rapidly developed. However, Flash memory is faced with limitation such as low operation speed, poor endurance, and high write voltage.
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core  

Reliability‐Aware Framework for Fault‐Tolerant Multi‐Sensor Fusion Using Neuromorphic Hardware‐Native Learning

Advanced Computing, Volume 1, Issue 1, December 2026.
Reliability of training inputs is essential for hardware‐native neuromorphic learning, as faulty data in sensor fusion generates false triggers due to wrong conductance updates. This work presents a reliability‐aware framework ensuring only trustworthy sensor inputs participate in training, preventing false associations and improving robust decision ...
Tauseef Ejaz, Kapil Bhardwaj, Sayani Majumdar   +2 more
wiley   +1 more source

Memristor‐Based Neuromorphic Computing for Intelligent Sensing and Edge Applications

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor‐based neuromorphic computing provides a promising foundation for energy‐efficient edge intelligence by integrating in‐memory computing, brain‐inspired neural networks, and in‐sensor processing. Memristive devices can emulate neurons and synapses, enabling compact crossbar architectures with reduced data movement, low power consumption, and ...
Hanrui Li, Nazek El‐Atab
wiley   +1 more source

Low‐Frequency Noise Evolution in Thin SiNx ReRAMs After Sequential Constant Voltage Stress

physica status solidi (a), Volume 223, Issue 21, 11 November 2026.
In this work, thin SiNx films in MIS ReRAM cells are stressed with a constant voltage for various sequential durations (25, 45, 65, 110 and 250 s) and the low‐frequency noise signal generated after each stress duration is measured using different sampling rates.
Alexandros E. Mavropoulis, Nikolaos Vasileiadis, Emmanouil Stavroulakis, Theodoros P. Chatzinikolaou, Vassilios Ioannou, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Detecting Resistive-Opens in RRAM using Programmable DfT Scheme

, 2013
Resistive Random Access Memory (RRAM) is one of the emerging memory devices that possesses a combined attribute of SRAM, DRAM and flash. How- ever, as the technology and fabrication process of such a promising memory devices are still immature, RRAM ...
Norsuhaidah , Arshad, Sukreen Hana , Herman, Nor Zaidi , Haron   +2 more
core   +1 more source