Optimizing TiO2/HfO2 Multilayer RRAM for Self-Rectifying Characteristics. [PDF]
Micromachines (Basel)Nam CH, Baek MH.
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Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]
RSC AdvXiao A +9 more
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Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications. [PDF]
ACS Appl Mater InterfacesNoh HY +6 more
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A hardware demonstration of a universal programmable RRAM-based probabilistic computer for molecular docking. [PDF]
Nat CommunHe Y +8 more
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Investigation of key performance metrics in TiO<sub>X</sub>/TiN based resistive random-access memory cells. [PDF]
Sci RepZink BR +4 more
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Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM. [PDF]
Micromachines (Basel)Lim H, Shim W, Kim TH.
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In Situ Quantization with Memory-Transistor Transfer Unit Based on Electrochemical Random-Access Memory for Edge Applications. [PDF]
Adv Sci (Weinh)Yang Z +9 more
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Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]
Nanomaterials (Basel)Wang YC +6 more
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Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing. [PDF]
Adv Sci (Weinh)Jang Y, Hwang C, Chae M, Kim T, Kim HD.
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Overcoming Volatility in Ion Gel via Ag Doping for Nonvolatile Memristive Switching. [PDF]
ACS OmegaNam J, Jeong J, Lee S, Kim Y, Jeon W.
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