Results 111 to 120 of about 14,872,237 (221)

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Compliance-free, analog RRAM devices based on SnOx

Scientific Reports
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly
Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, Syed Jalaluddeen A, Mari Napari, Themis Prodromakis   +5 more
doaj   +1 more source

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis, Kai Ni, Wriddhi Chakraborty, Xunzhao Yin, Martin Trentzsch, Stefan Dunkel, Thomas Melde, Johannes Muller, Sven Beyer, Suman Datta, Michael T. Niemier, Xiaobo Sharon Hu   +11 more
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications

, 2013
This thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology.
Fang, Zheng
core   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Metal‐Filamentary Memristor‐Based Artificial Neurons for Embodied Neuromorphic Intelligence

Rare Metals, Volume 45, Issue 9, September 2026.
ABSTRACT Embodied neuromorphic intelligence represents a transformative paradigm for next‐generation intelligent systems, with broad implications for robotics, autonomous driving, intelligent manufacturing, and smart infrastructures. Neuromorphic chips enable bioinspired computing with sparse, heterogeneous representations and spatiotemporal dynamics ...
Tianci Huang, Zuqing Yuan, Qilin Hua
wiley   +1 more source

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

, 2014
In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a ...
Chu, Tian-Jian, Chen, Jung-Hui, Chen, Hsin-Lu, Lou, Jen-Chung, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Min-Chen, Young, Tai-Fa, Huang, Jen-Wei, Sze, Simon M., Syu, Yong-En, Chang, Kuan-Chang, Bao, Dinghua, Zhang, Rui, Chen, Kai-Huang, Huang, Syuan-Yong   +15 more
core   +1 more source

A comprehensive investigation of MoO3 based resistive random access memory

, 2020
The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.
Fatheema, Jameela, Mohammad, Mohammad Ali, Akinwande, Deji, Rizwan, Syed, Malik, Fouzia, Shahid, Tauseef, Islam, Amjad   +6 more
core   +1 more source

Investigations of TiO2-based resistive random-access memory

, 2021
In this study, titanium dioxide (TiO2) is successfully grown by the ultrasonic spray pyrolysis deposition (USPD) method and applied to resistive random-access memory (RRAM).
Zheng, Yu-Xing
core