Results 101 to 110 of about 14,872,237 (221)

Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design [PDF]

, 2018
In this paper, we report about the derivation of a physics-based compact model of random telegraph noise (RTN) in HfO2-based resistive random access memory (RRAM) devices.
Larcher, Luca, Francesco Maria Puglisi, Nicolo Zagni, Zagni, Nicolo, Luca Larcher, Paolo Pavan, Pavan, Paolo, Puglisi, Francesco Maria   +7 more
core   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Multilevel Resistive Switching Characteristics in Ag/SiO2/Pt RRAM Devices

, 2011
Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes.
Liu, L. F., D. Yu, Gao, B., X. Zhang, Fu, Y. H., L. F. Liu, Kang, J. F., Zhang, X., X. Y. Liu, Zhang, F. F., J. F. Kang, Liu, X. Y., Y. H. Fu, F. F. Zhang, B. Gao, Chen, B., Yu, D., B. Chen   +17 more
core   +1 more source

Conjugated Polymers Engineered for Flexible/Stretchable Electronics

Journal of Polymer Science, EarlyView.
This review highlights glass transition temperature (Tg) as the central parameter linking molecular structure to device performance in conjugated polymers. By tuning backbone rigidity, side‐chain architecture, and dynamic bonding, Tg governs the balance between π–π stacking–enabled charge transport and mechanical compliance.
Yunchong Yang, Josh Bass, Weijia Yan, Ashwath Anand, Chunka Zhou, Jingjing Qiu   +5 more
wiley   +1 more source

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

, 2018
We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.
Jong Yeog Son, Tae Hoon Lee, Hyun Wook Shin, Yoonho Ahn, Woo-Hee Kim   +4 more
core   +1 more source

Physical Simulation of Si-Based Resistive Random-Access Memory Devices [PDF]

, 2015
We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been ...
Asenov, Asen, Asen Asenov, Sadi, Toufik, Gerrer, Louis, Wang, Liping, Toufik Sadi, Liping Wang, Louis Gerrer   +7 more
core   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

Photo‐synaptic Memristor Devices from Solution‐processed Ga2O3 Thin Films

Advanced Electronic Materials
Hardware integration with biological synaptic function is the key to realizing brain‐like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic
Wei Wang, Xiangxiang Gao, Zhenhua Lin, Haoyu Bai, Dongsheng Cui, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang   +8 more
doaj   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, Volume 38, Issue 49, 1 September 2026.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source