Results 101 to 110 of about 1,297 (189)

Molecular Design Toward High-Performance Solution-Processable Push-Pull Zinc(II) Porphyrin-Based Resistive Memory Devices: From Binary to Ternary Memory Behavior. [PDF]

Small Sci
Kwong KW, Chan H, Leung MY, Hong EY, Lai SL, Yam VW.   +5 more
europepmc   +1 more source

Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing. [PDF]

Adv Mater
Son K, Cho JM, Shin DH, Kim YR, Ghenzi N, Cheong S, Kim BS, Lee JK, Kim S, Choi W, Lee SH, Han J, Hwang CS.   +12 more
europepmc   +1 more source

Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices. [PDF]

Micromachines (Basel)
Chen KH, Cheng CM, Kao MC, Chen HC, Wang YC, Tsai YH.   +5 more
europepmc   +1 more source

Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes. [PDF]

Nano Lett
Solomon P, Kaniselvan M, Miyazoe H, Khan B, Ando T, Luisier M.   +5 more
europepmc   +1 more source

A Fully Si-Compatible Ni/Si₃N₄/Al₂O₃/<i>p</i> ⁺ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]

ACS Omega
Lee Y, Kim S, Kim S, Shim W, Kim S, Cho S.   +5 more
europepmc   +1 more source

Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]

ACS Omega
Fedotov MI, Klyukina EV, Vankaev AS, Znamenskii AG, Koveshnikov SV.   +4 more
europepmc   +1 more source

In-Sensor-Memory Computing for Post-Von Neumann Intelligence: A Perspective. [PDF]

Nanomicro Lett
Tang H, Yu N, Min P, Guo R, Zhang G.
europepmc   +1 more source

The Influence of the Ar/N₂ Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]

Materials (Basel)
Jeżak P, Seweryn A, Klepka M, Mroczyński R.   +3 more
europepmc   +1 more source

Modellizzazione e funzionamento della Resistive Random Access Memory (RRAM)

Le memorie RRAM (Resistive Random Access Memories) hanno recentemente mostrato caratteristiche eccezionali come alta scalabilità, alta velocità, alta densità e funzionamento a bassa energia. In questo elaborato viene presentato in generale il funzionamento della RRAM; dalla sua fabbricazione fino all'architettura della memoria. Nella prima parte del
openaire   +1 more source

In-memory analog computing for non-negative matrix factorization. [PDF]

Nat Commun
Wang S, Luo Y, Zuo P, Li Y, Pan L, Ielmini D, Sun Z.   +6 more
europepmc   +1 more source