Results 101 to 110 of about 16,903,176 (225)

Investigation on the Impact of Memristive Device Variability on Uncoupled Memristive Cellular Nonlinear Networks

Advanced Electronic Materials, EarlyView.
Memristors, nanoscale devices that compute and store data in the same place, promise compact, energy‐efficient image‐processing hardware, yet no two devices behave exactly alike. Simulations based on real device measurements show that a 256‐cell memristive cellular nonlinear network (M‐CellNN) detects image edges perfectly despite this variability and ...
Salwa Yasmeen Neyaz, Kristoffer Schnieders, Yongmin Wang, Alon Ascoli, Ioannis Messaris, Ronald Tetzlaff, Vasileios Ntinas, Ricardo Carmona Galán, Stefan Wiefels, Vikas Rana, Stephan Menzel   +10 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Vertical NAND Flash Memory‐Based Bayesian Neural Networks With Intrinsic Gaussian Weight Sampling

Advanced Intelligent Systems, EarlyView.
Commercial vertical NAND flash memory supports Bayesian neural networks by using paired cells to produce bell‐shaped weight distributions. Read voltage controls their spread without additional memory cells or changes to the array structure. Simulations based on device measurements demonstrate improved uncertainty estimation and accuracy gains of up to ...
Sung‐Ho Park, Mingyun Oh, Dongbeen Shin, Jaehyeon Kim, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Photo‐synaptic Memristor Devices from Solution‐processed Ga2O3 Thin Films

Advanced Electronic Materials
Hardware integration with biological synaptic function is the key to realizing brain‐like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic
Wei Wang, Xiangxiang Gao, Zhenhua Lin, Haoyu Bai, Dongsheng Cui, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang   +8 more
doaj   +1 more source

Quasi‐2D perovskite memristors: From layered structures to advanced computing applications

InfoScience, EarlyView.
Quasi‐2D perovskites enable stable memristive switching through dimensional engineering that controls ion migration pathways. The layered structure suppresses leakage, improves environmental stability, and enables analog conductance modulation for neuromorphic computing, artificial vision, and in‐memory architectures, transforming ion migration from a ...
Jie Ma, Yujian Du, Yuljae Cho
wiley   +1 more source

Conjugated Polymers Engineered for Flexible/Stretchable Electronics

Journal of Polymer Science, EarlyView.
This review highlights glass transition temperature (Tg) as the central parameter linking molecular structure to device performance in conjugated polymers. By tuning backbone rigidity, side‐chain architecture, and dynamic bonding, Tg governs the balance between π–π stacking–enabled charge transport and mechanical compliance.
Yunchong Yang, Josh Bass, Weijia Yan, Ashwath Anand, Chunka Zhou, Jingjing Qiu   +5 more
wiley   +1 more source

A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory

, 2013
In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations.
Andrea Padovani, PUGLISI, Francesco Maria, Francesco Maria Puglisi, PAVAN, Paolo, PADOVANI, ANDREA, Luca Larcher, Paolo Pavan, LARCHER, Luca   +7 more
core   +1 more source

Compliance-free, analog RRAM devices based on SnOx

Scientific Reports
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly
Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, Syed Jalaluddeen A, Mari Napari, Themis Prodromakis   +5 more
doaj   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

2D resistive switching memories: graphene and related materials for Resistive Random Access Memories

, 2017
Graphene and related materials, such as graphene oxide, hexagonal boron nitride, transition metal dichalcogenides and black phosphorous, are promising candidates for the fabrication of resistive random access memories (RRAM), a technology which could ...
Grustan Gutierrez, Enric, Fei Hui, Ferrari, Andrea C., Anna K. Ott, Ott, Anna K., Lanzo, Mario, Hui, Fei, Shibing Long, Lui, Qi, Enric Grustan-Gutierrez, Mario Lanza, Long, Shibing, Andrea C. Ferrari, Qi Liu   +13 more
core   +1 more source