Results 81 to 90 of about 16,903,176 (225)

A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory

, 2016
In this paper we present the results of a systematic study of resistive states cycling dispersion in HfOx Resistive Random Access Memory (RRAM). A wide set of experimental data is collected on several RRAM devices in different operating conditions.
PUGLISI, Francesco Maria, Francesco Maria Puglisi, PAVAN, Paolo, Paolo Pavan   +3 more
core   +1 more source

Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices

, 2016
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
Dongale, T. D., Khot, K. V., Mohite, S. V., Khandagale, S. S., Shinde, S. S., Moholkar, A. V., Rajpure, K. Y., Bhosale, P. N., Patil, P. S., Gaikwad, P. K., Kamat, R. K.   +10 more
openaire   +2 more sources

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

Advanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min‐Hwi Kim   +4 more
wiley   +1 more source

In Memory Energy Application for Resistive Random Access Memory

, 2021
International audienceThis work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage.
Pillonnet, Gaël, Mathieu Bernard, Sami Oukassi, Molas, Gabriel, Oukassi, Sami, Paola Trotti, Aussenac, François, François Aussenac, Trotti, Paola, Gabriel Molas, Gaël Pillonnet, Bernard, Mathieu   +11 more
core   +1 more source

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions

Advanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang, Dooyong Koh, Brooke McGoldrick, Tudor Mocioi, Yabin Fan, Marc Baldo, Luqiao Liu   +6 more
wiley   +1 more source

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Nanoscale Research Letters, 2018
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the ...
Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King   +3 more
doaj   +1 more source

Device Stochasticity Directly Implements Bayesian Sampling in Spiking Neurons

Advanced Science, EarlyView.
Brain‐inspired stochastic spiking turns device noise into Bayesian uncertainty for robust, low‐power neuromorphic computing. ABSTRACT Device stochasticity is considered a non‐ideality in neuromorphic hardware, although stochastic neural activity supports probabilistic computation in biological systems.
Huannan Zheng, Jingli Liu, Kezhou Yang
wiley   +1 more source

Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Nanomaterials, 2020
Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also
Batyrbek Alimkhanuly, Sanghoek Kim, Lok-won Kim, Seunghyun Lee   +3 more
doaj   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Memristive Non-Volatile Memory Based on Graphene Materials

Micromachines, 2020
Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in ...
Zongjie Shen, Chun Zhao, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Jiacheng Wen, Yanbo Huang, Puzhuo Li, Cezhou Zhao   +8 more
doaj   +1 more source