Results 81 to 90 of about 14,872,237 (221)
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo +7 more
core +1 more source
Simulation of resistive random-access memory (RRAM) : SPICE modelling of RRAM device
, 2021 Memory is an essential component of the electronic device. Today, nearly 30% area of a chip is taken by different types of memory. Recently, non-volatile memory is becoming more and more popular.
Lian, Jie
core
Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices
, 2016 In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
Dongale, T. D. +10 more
openaire +2 more sources
Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
Advanced Electronic Materials, EarlyView.A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
Nanoscale Research Letters, 2018 Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the ...
Yun-Feng Kao +3 more
doaj +1 more source
SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range
Advanced Electronic Materials, EarlyView.A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel +6 more
wiley +1 more source
Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode
Nanomaterials, 2020 Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also
Batyrbek Alimkhanuly +3 more
doaj +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source