Results 81 to 90 of about 1,297 (189)

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, EarlyView.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Conjugated Polymers Engineered for Flexible/Stretchable Electronics

Journal of Polymer Science, EarlyView.
This review highlights glass transition temperature (Tg) as the central parameter linking molecular structure to device performance in conjugated polymers. By tuning backbone rigidity, side‐chain architecture, and dynamic bonding, Tg governs the balance between π–π stacking–enabled charge transport and mechanical compliance.
Yunchong Yang, Josh Bass, Weijia Yan, Ashwath Anand, Chunka Zhou, Jingjing Qiu   +5 more
wiley   +1 more source

Photo‐synaptic Memristor Devices from Solution‐processed Ga2O3 Thin Films

Advanced Electronic Materials
Hardware integration with biological synaptic function is the key to realizing brain‐like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic
Wei Wang, Xiangxiang Gao, Zhenhua Lin, Haoyu Bai, Dongsheng Cui, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang   +8 more
doaj   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Physical Unclonable Function Based on 3D‐NAND Flash Array Structure With Multi‐Chip Implementation

Small, EarlyView.
Physical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwiho Hwang, Sangwook Youn, Jinwoo Park, Dayeon Yu, Hyungjin Kim   +4 more
wiley   +1 more source

Compliance-free, analog RRAM devices based on SnOx

Scientific Reports
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly
Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, Syed Jalaluddeen A, Mari Napari, Themis Prodromakis   +5 more
doaj   +1 more source

Overcoming the Trade‐off in Oscillatory TRNGs With a Hybrid NbO2 and Atomic Fluctuation Entropy Source Architecture

Advanced Electronic Materials, Volume 12, Issue 15, 10 August 2026.
A hybrid oscillator combining an atomic swith and an insulator‐to metal transition device converts stochastic filament resistance into random oscillation periods. The interaction between highly variable atomic switching and stable high‐frequency oscillation amplifies entropy, enabling fast energy‐efficient, and reliable true random number generation ...
Sunhyeong Lee, Seongjae Heo, Dongmin Kim, Ohhyuk Kwon, Hyunsang Hwang   +4 more
wiley   +1 more source

Bioresorbable Scaffolds for Coronary Arteries: Where Do We Stand Today?

VIEW Medicine, Volume 1, Issue 1, August 2026.
Bioresorbable coronary scaffolds are moving from thick strut pitfalls to thinner, stronger, healing‐oriented designs. Integrating advances in materials, guided implantation with preparation, size, and postdilation steps, and resorption aligned to healing, we synthesize clinical evidence and chart a roadmap toward intelligent, transient platforms ...
Junya Matsuda, Tatsuya Watanabe, Satoshi Yuhara, John M. Kelly, Hirotsugu Kurobe, Toshiharu Shinoka   +5 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials
This study investigates the electrical properties of the SnO2/SnS2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH4)4Sn2S6 is used as a source for the production of the heterojunction.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
doaj   +1 more source

Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices

Engineering Proceedings
In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h.
Kai-Huang Chen, Ming-Cheng Kao, Yao-Chin Wang, Hsin-Chin Chen, Chin-Chueh Huang Kao   +4 more
doaj   +1 more source