Results 61 to 70 of about 16,903,176 (225)

Conductance quantization in resistive random access memory

, 2021
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM ...
Liu, Ming, Lv, Hangbing, Liu, Yang, Hu, Chen, Li, Yang, Teng, Jiao, Long, Shibing, Suñé, Jordi, Liu, Qi   +8 more
core  

ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)

Crystals, 2023
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes.
Ewelina Nowak, Edyta Chłopocka, Mirosław Szybowicz   +2 more
openaire   +2 more sources

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee, Hyoik Jang, Ji Hwan Kim, Jonghyun Won, Namhee Kim, Wonseok Shin, Giwon Lee, Eunho Lee, Daegun Kim, Sungjun Park   +9 more
wiley   +1 more source

A novel read circuit for RRAM based on RC delay effect

Electronics Letters, 2023
In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye, Xuecheng Cui, Haoxiong Bi, Jifang Cao, Wannian Wang, Xiaoxin Xu, Dong Liu, Bing Chen   +7 more
doaj   +1 more source

Multi-Level Resistive Al/Ga₂O₃/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

Nanomaterials, 2023
Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications.
Li-Wen Wang, Chih-Wei Huang, Ke-Jing Lee, Sheng-Yuan Chu, Yeong-Her Wang   +4 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

, 2011
We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process.
Ryoo, Kyung-Chang, Hongsik Jeong, Jeong, Hongsik, Park, Byung-Gook, Kyung-Chang Ryoo, Jeong-Hoon Oh, Oh, Jeong-Hoon, Byung-Gook Park, Sunghun Jung, Jung, Sunghun   +9 more
core   +1 more source

Cerium oxide based resistive random access memory devices [PDF]

, 2017
Resistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory (NVM). Although the observation of metal oxide that can undergo an abrupt insulator-metal transition into a conductive state has been known for over 40 years ...
Hsieh, Cheng Chih
core   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

, 2018
We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.
Jong Yeog Son, Tae Hoon Lee, Hyun Wook Shin, Yoonho Ahn, Woo-Hee Kim   +4 more
core   +1 more source