Results 121 to 130 of about 14,872,237 (221)

Multilevel resistive switching in Hf-based RRAM

, 2019
In this paper, the multilevel switching behaviors of resistive random-access memory (RRAM) devices with three different dielectric materials such as HfO2, HfZrO2 and HfAlO2 are investigated. We have further explored the switching characteristics with two
Wajda, C. S., Clark, R. D., Misra, D., Tapily, K., Huang, C. S., Leusink, G. J., Jain, B., Consiglio, S.   +7 more
core   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials
This study investigates the electrical properties of the SnO2/SnS2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH4)4Sn2S6 is used as a source for the production of the heterojunction.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
doaj   +1 more source

Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices

Engineering Proceedings
In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h.
Kai-Huang Chen, Ming-Cheng Kao, Yao-Chin Wang, Hsin-Chin Chen, Chin-Chueh Huang Kao   +4 more
doaj   +1 more source

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation For Multilevel Data Storage

, 2012
A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM).
Liu, L. F., Kang, J.F., Gao, B., H. Y. Yu, L. F. Liu, B. Yu, Kang, J. F., Gao, Bin, X. Y. Liu, J. F. Kang, Wang, Z.R., Liu, X. Y., Yu, H.Y., Liu, X.Y., Yu, H. Y., Wang, Z. R., Liu, L.F., B. Gao, Z. R. Wang, Yu, B., Yu, Hongyu, Chen, B., B. Chen   +22 more
core   +1 more source

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

, 2012
Although Resistive random access memory (RRAM) is a promising alternative for next-generation nonvolatile memory, it still suffers from high switching current/power, resulting in large selectors that are normally in series with resistive devices. In this
Kang, Jinfeng, Chen, Yuansha, Chen, Bing, Lo Guo-Qiang, Fu, Yihan, Zhang, Feifei, Li, Xiang, Singh, Navab, Kwong, Dim-Lee, Gao, Bin, Huang, Peng, Liu, Lifeng   +11 more
core   +1 more source

Recent advances in inorganic oxides-based resistive random-access memory devices

, 2022
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy efficient and have an ...
Mondal, Prakash Chandra, Gupta, Ritu, Pritam, Anurag   +2 more
core  

Electrical properties of NiO bipolar Resistive Random Access Memory (RRAM)

, 2013
本論文，我們利用熱蒸鍍法在P-type 矽基板上，度上一層鎳薄膜。將其放入高溫爐氧化，形成氧化鎳薄膜，並利用鋁，做為此結構的上電極，使用AFM以及XRD分析其表面結構以及晶格結構。 本研究分別針對，氧化溫度與氧氣流量此兩種變因，對此結構的雙極電阻式記憶體性質做分析討論。 實驗結果顯示，在提高氧化溫度下，高阻態與低組態的電阻值會隨者溫度上升而上升；在提高流量之下，高阻態與低組態的電阻值會隨者流量上升而下降。而另外粗糙度的提升，會使元件的電阻轉換性質變得更穩定 ...
Chen, Chan-Cheng, 陳展承
core  

Characterization of Amorphous Carbon Resistive Random Access Memory

, 2014
The increasing demand for flash memory densities by scaling dimension is a formidable challenge due to physical limitations. Recently, carbon-based resistive random access memory (RRAM) exhibits to be a promising candidate for high density and low power ...
Chen, Yi-jiun
core  

Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor

, 2012
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates ...
Rocha, Paulo R. F., Kiazadeh, Asal, Chen, Q., Gomes, Henrique L.   +3 more
openaire   +1 more source

In Situ Transmission Electron Microscopy Observation of Redox-Structure-Coupled Resistive Switching in High-Entropy Oxide Memristors. [PDF]

ACS Nano
Cheng JD, Tsai JY, Huang CW, Wang CH, Su CM, Chen JY, Chu YH, Wu WW.   +7 more
europepmc   +1 more source