Results 121 to 130 of about 16,903,176 (225)

Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices

Engineering Proceedings
In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h.
Kai-Huang Chen, Ming-Cheng Kao, Yao-Chin Wang, Hsin-Chin Chen, Chin-Chueh Huang Kao   +4 more
doaj   +1 more source

Soft-Error Analysis of RRAM 1T1R Compute-In-Memory Core for Artificial Neural Networks

This work analyses SEU-induced soft-errors in analog compute-in-memory cores using resistive random-Access memory (RRAM) for artificial neural networks, where their bitcells utilize one-Transistor-one-RRAM (1T1R) structure.
Fritscher, Markus, Jia, Ruolan, Pechmann, Stefan, Wenger, Christian, Zhang, Lei, Hagelauer, Amelie M., Jia, Ruolan;Pechmann, Stefan;Markus, Fritscher;Wenger, Christian;Zhang, Lei;Hagelauer, Amelie   +6 more
core   +1 more source

Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

, 2019
Hafnium oxide-based resistive random access memory (RRAM) (TiN/HfO2-x/Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 10(10) and 10(12) ions/cm(2) and evaluated regarding pristine resistance, forming voltage, and data retention ...
Alff, Lambert, Hildebrandt, Erwin, Trautmann, Christina, Sharath, S. U., Petzold, Stefan, Lemke, Jonas   +5 more
core   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials
This study investigates the electrical properties of the SnO2/SnS2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH4)4Sn2S6 is used as a source for the production of the heterojunction.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
doaj   +1 more source

Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory

Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals.
Murali, Santosh
core   +5 more sources

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

, 2017
A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).
Chih-Hung Pan, Tsung-Ming Tsai, Kuan-Chang Chang, Huaqiang Wu, Jia-Ji Wu, He Qian, Cong Ye, Ning Deng   +7 more
core   +1 more source

Mechanism discrimination in multilevel RRAM using state-resolved impedance evolution

Resistive random access memory (RRAM) requires reliable mechanism discrimination in multilevel operation because distinct switching pathways produce different state evolution and frequency responses.
Min-Hwi Kim, Hyoseob Kim, Sangwoo Jung, Sungjoon Kim, Kyungho Hong, Donghyun Ryu   +5 more
core   +1 more source

Resistive random access memory based multiplexers and field programmable gate arrays

Resistive random access memory (RRAM) based multiplexers and field programmable gate arrays (FPGAs) are provided. The RRAM-based multiplexers and FPGAs include a 4T1R programming structure to program the RRAMs.
De Micheli, Giovanni, Giacomin, Edouard, Gaillardon, Pierre-Emanuel, Kim, Gain, Tang, Xifan   +4 more
core  

Synthesis of halide perovskite thin films from an eutectic mixture of Pb(NO₃)₂, acetamide, and urea for fabricating resistive random-access memory (RRAM). [PDF]

RSC Adv
Huynh CT, Ha Cao VT, Nguyen TD, Ngo TT, Danh EH, Pham QP, Pham NK, Nguyen PT.   +7 more
europepmc   +1 more source

A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities. [PDF]

Sci Rep
Roy A, Dhibar S, Kumar S, Karmakar K, Garg P, Ruidas P, Bhattacharjee S, Bera A, Saha B, Ray SJ.   +9 more
europepmc   +1 more source