Results 141 to 150 of about 16,903,176 (225)

A Rapid-prototyping CMOS-RRAM Integration Strategy. [PDF]

Microsyst Nanoeng
Tsiamis A, Stathopoulos S, Prodromakis T.   +2 more
europepmc   +1 more source

Investigation of Resistive Switching in Cu/a-SiC/P⁺-Si Structure for Multilevel Nonvolatile Memory Applications. [PDF]

Micromachines (Basel)
Shao H, Zhu X, Zhang X, Zheng W, Zhang L, Chen L.   +5 more
europepmc   +1 more source

Nanoscale Filament Evolution and Local Resistive Switching in Substoichiometric Yttrium Oxide Thin Films. [PDF]

Nano Lett
Liu YP, Wang E, Schreyer P, Duan Y, Bayer L, Li Y, Kim T, Arzumanov A, Wiefels S, Piros E, Alff L, Dittmann R.   +11 more
europepmc   +1 more source

Investigation of lead-free double perovskite Cs₂CeAgCl₆ for resistive switching and optoelectronic applications. [PDF]

Sci Rep
Majid A, Ahmed S, Maqbool N, Noori N, Nasir M, Imtiaz S, Al-Harbi FF, Abdulakimov G, Ahmad Y, Khan MI.   +9 more
europepmc   +1 more source

Epitaxial Bi₂O₂Se/Bi₂O₅Se Thin Films: Revealing Electric-Field-Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices. [PDF]

Adv Sci (Weinh)
Chen YJ, Wang YJ, Hong ZQ, Wang CH, Wang YN, De Cheng J, Huang CW, Chu YH, Wu WW.   +8 more
europepmc   +1 more source

Agar-Based Resistive Switching Memory for Neuromorphic Applications. [PDF]

ACS Omega
Chen HC, Kao IC, Lai KJ, Chen CY, Chang YC.   +4 more
europepmc   +1 more source

Resistive switching memristors: structures, materials, fabrication techniques, and process challenges for VLSI integration. [PDF]

RSC Adv
Singla R, Pant D, Nautiyal P, Painuly A.
europepmc   +1 more source

Modellizzazione e funzionamento della Resistive Random Access Memory (RRAM)

Le memorie RRAM (Resistive Random Access Memories) hanno recentemente mostrato caratteristiche eccezionali come alta scalabilità, alta velocità, alta densità e funzionamento a bassa energia. In questo elaborato viene presentato in generale il funzionamento della RRAM; dalla sua fabbricazione fino all'architettura della memoria. Nella prima parte del
openaire   +1 more source

Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices. [PDF]

Micromachines (Basel)
Chen KH, Kao MC, Chen HC, Wang YC, Cheng CM, Xu WM.   +5 more
europepmc   +1 more source

Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM. [PDF]

Sci Rep
Moazzeni A, Riyahi Madvar H, Hamedi S, Kordrostami Z.   +3 more
europepmc   +1 more source