Results 141 to 150 of about 1,297 (189)

Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Yi-Ying Liao, Pang-Shiu Chen, Shyh-Shyuan Sheu, Pi-Feng Chiu, Wen-Ping Lin, Chih-He Lin, Ming-Jinn Tsai, Tzu-Kun Ku   +14 more
openaire   +1 more source

Metal oxide resistive random access memory (RRAM) technology

2014
D C Gilmer
exaly   +2 more sources

Switching in polymeric resistance random-access memories (RRAMS)

Organic Electronics, 2008
Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L., Benvenho, A. R. V., De Leeuw, Dago M., Cölle, M., Stallinga, Peter, Verbakel, F., Taylor, D. M.   +6 more
openaire   +3 more sources

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

2019 International Conference on Electromagnetics in Advanced Applications (ICEAA), 2019
In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition ...
Da-Wei Wang, Wen-Yan Yin, Wenchao Chen, Wen-Sheng Zhao   +3 more
openaire   +1 more source

Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

MRS Proceedings, 2011
ABSTRACTThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s).
Rocha, P. F., Gomes, Henrique L., Kiazadeh, Asal, Chen, Q., De Leeuw, D. M., Meskers, S. C. J.   +5 more
openaire   +3 more sources

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

2018
Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The reported experimental data is consistent with a physical picture of the RRAM switching as caused by oxidation/reduction processes in a conductive
David C. Gilmer, Gennadi Bersuker
openaire   +1 more source

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

2020 IEEE International Conference on Computational Electromagnetics (ICCEM), 2020
Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array.
Tan-Yi Li, Da-Wei Wang, Sichao Du, Wenchao Chen, Wen-Yan Yin   +4 more
openaire   +1 more source

Dimensional Effect of Non-Polar Resistive Random Access Memory (RRAM) for Low-Power Memory Application

Journal of Nanoscience and Nanotechnology, 2012
The relationships between the resistive cell dimension and the related analytical parameters such as the forming voltage, set voltage, and reset current were investigated to implement high-density and low-power unipolar RRAM. It was shown that the formation process in unipolar switching is strongly related to the cell dimension in the sub-nm region ...
Kyung-Chang, Ryoo, Jeong-Hoon, Oh, Sunghun, Jung, Hongsik, Jeong, Byung-Gook, Park   +4 more
openaire   +2 more sources

Verilog-A compact model for oxide-based resistive random access memory (RRAM)

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014
We demonstrate a dynamic Verilog-A RRAM compact model capable of simulating real-time DC cycling and pulsed operation device behavior, including random variability that is inherent to RRAM. This paper illustrates the physics and capabilities of the model. The model is verified using different sets of experimental data.
Zizhen Jiang, Shimeng Yu, Yi Wu, Jesse H. Engel, Ximeng Guan, H.-S. Philip Wong   +5 more
openaire   +1 more source

Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013
The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimize the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the
Liu Kai, Zhang Kailiang, Wang Fang, Zhao Jinshi, Wei Jun   +4 more
openaire   +1 more source