Results 131 to 140 of about 1,297 (189)

All HfO_<i>x</i>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer. [PDF]

ACS Appl Mater Interfaces
Schreyer P, Kaiser N, Nasiou D, Piros E, Duan Y, Kim T, Li Y, Shih LC, Winkler R, Aguirre FL, Vogel T, Arzumanov A, Chen JS, Molina-Luna L, Alff L.   +14 more
europepmc   +1 more source

Compute-in-memory implementation of state space models for event sequence processing. [PDF]

Nat Commun
Zhang X, Hu M, Lu S, Kim S, Lee EY, Liu Y, Lu WD.   +6 more
europepmc   +1 more source

Memristor-Based Artificial Neural Networks for Hardware Neuromorphic Computing. [PDF]

Research (Wash D C)
Jin B, Wang Z, Wang T, Meng J.
europepmc   +1 more source

11-bit two-dimensional floating-gate memories. [PDF]

Nat Commun
Wang Y, Cai Y, Wang F, Yan T, Li S, Cao M, Hong R, Zhai B, Xu K, Zhan X, He J, Wang Z.   +11 more
europepmc   +1 more source

Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO₃ Thin-Film Memristor. [PDF]

Materials (Basel)
Lee KJ, Wu CH, Lee CJ, Chou DW, Wang NF, Wang YH.   +5 more
europepmc   +1 more source

Interface-Induced Synaptic Performance in CeO₂/La_0.8Ba_0.2MnO₃ Oxygen Reservoir Junction. [PDF]

ACS Appl Mater Interfaces
Rathod KN, Datt G, Aslibeiki B, Johansson T, Barucca G, Peddis D, Kamalakar MV, Sarkar T.   +7 more
europepmc   +1 more source

In situ observation of oxygen ion dynamics in topological phase change memristors through self-assembled interface design. [PDF]

Sci Adv
Li K, Zhang J, Chen Y, Pan J, Zheng Y, Xu S, Zhao R, Li M, Qi R, Huang R, Yan Z, Yu P, Liu JM, MacManus-Driscoll JL, Yang H, Li W.   +15 more
europepmc   +1 more source

Study of the Characteristics of Ba_0.6Sr_0.4Ti_1-xMn_xO₃-Film Resistance Random Access Memory Devices. [PDF]

Micromachines (Basel)
Chen KH, Cheng CM, Kao MC, Kao YH, Lin SF.   +4 more
europepmc   +1 more source

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Recent progress of resistive switching random access memory (RRAM)

2012 IEEE Silicon Nanoelectronics Workshop (SNW), 2012
This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM.
Shimeng Yu, H -S Philip Wong, Ximeng Guan   +2 more
exaly   +2 more sources

Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

2010 IEEE Nanotechnology Materials and Devices Conference, 2010
Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction.
Byung Park, Kyung-Chang Ryoo, Jeong-Hoon Oh   +2 more
exaly   +2 more sources