Results 151 to 160 of about 16,903,176 (225)

Ultra-low-power probabilistic graphical computing based on memristors enabling communications signal processing. [PDF]

Nat Commun
Jiang C, Wang J, Pan Z, Liu Y, Hong Y, Tian H, Kuang L, Lu J.   +7 more
europepmc   +1 more source

Event-Driven Neuromorphic Gaze Decoding via e-Skin Electrooculography. [PDF]

ACS Nano
Jeong S, Ko HW, Kang JH, Ko J, Sim I, Xu Z, Jeong H, Kim SI, Choi Y, Jo S, Shim JW, Seo PH, Chae MS, Kim Y, Rehman A, Yeon H, Park BI, Suh YW, Lee H, Kim J, Lee K, Bae SH, Park MC, Mun S.   +23 more
europepmc   +1 more source

Wafer-scale SOT-MRAM for analog crossbar array applications. [PDF]

Sci Adv
Liu S, Rogers V, Hu CY, Song MY, Bao X, Incorvia JAC.   +5 more
europepmc   +1 more source

Study on Electrical Behavior of TiO₂ and ZnO Nanostructures: Resistive Switching and State Retention Under Pressure and Temperature Conditions. [PDF]

Nanomaterials (Basel)
Patiño CE, Nuñez DE, Porras Ramírez Y, Calderón JA, Quiroz HP, Dussan A.   +5 more
europepmc   +1 more source

Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing. [PDF]

Adv Mater
Son K, Cho JM, Shin DH, Kim YR, Ghenzi N, Cheong S, Kim BS, Lee JK, Kim S, Choi W, Lee SH, Han J, Hwang CS.   +12 more
europepmc   +1 more source

Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices. [PDF]

Micromachines (Basel)
Chen KH, Cheng CM, Kao MC, Chen HC, Wang YC, Tsai YH.   +5 more
europepmc   +1 more source

Molecular Design Toward High-Performance Solution-Processable Push-Pull Zinc(II) Porphyrin-Based Resistive Memory Devices: From Binary to Ternary Memory Behavior. [PDF]

Small Sci
Kwong KW, Chan H, Leung MY, Hong EY, Lai SL, Yam VW.   +5 more
europepmc   +1 more source

Harnessing the full potential of RRAMs through scalable and distributed in-memory computing with integrated error correction. [PDF]

Commun Eng
Vo HQN, Chowdhury MTR, Ramanan P, Yildirim M, Tutuncuoglu G.   +4 more
europepmc   +1 more source

Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes. [PDF]

Nano Lett
Solomon P, Kaniselvan M, Miyazoe H, Khan B, Ando T, Luisier M.   +5 more
europepmc   +1 more source

A Fully Si-Compatible Ni/Si₃N₄/Al₂O₃/<i>p</i> ⁺ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]

ACS Omega
Lee Y, Kim S, Kim S, Shim W, Kim S, Cho S.   +5 more
europepmc   +1 more source