Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]
ACS OmegaFedotov MI +4 more
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In-Sensor-Memory Computing for Post-Von Neumann Intelligence: A Perspective. [PDF]
Nanomicro LettTang H, Yu N, Min P, Guo R, Zhang G.
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The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Materials (Basel)Jeżak P +3 more
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Optimizing TiO2/HfO2 Multilayer RRAM for Self-Rectifying Characteristics. [PDF]
Micromachines (Basel)Nam CH, Baek MH.
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In-memory analog computing for non-negative matrix factorization. [PDF]
Nat CommunWang S +6 more
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Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]
RSC AdvXiao A +9 more
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Stateful Logic Using Selector-Only-Memory With Tunable Operation Directionality. [PDF]
SmallSong JH, Mun YY, Yang MK, Kim GH.
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Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications. [PDF]
ACS Appl Mater InterfacesNoh HY +6 more
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Homeostatic dendritic neuron based on co-integrated volatile and non-volatile memristors for neuromorphic processing. [PDF]
Nat CommunZhang L +5 more
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Investigation of key performance metrics in TiO<sub>X</sub>/TiN based resistive random-access memory cells. [PDF]
Sci RepZink BR +4 more
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