Results 171 to 180 of about 14,872,237 (221)

Recent progress of resistive switching random access memory (RRAM)

2012 IEEE Silicon Nanoelectronics Workshop (SNW), 2012
This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM.
Shimeng Yu, H -S Philip Wong, Ximeng Guan   +2 more
exaly   +2 more sources

Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

2010 IEEE Nanotechnology Materials and Devices Conference, 2010
Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction.
Byung Park, Kyung-Chang Ryoo, Jeong-Hoon Oh   +2 more
exaly   +2 more sources

Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application

Journal of Nanoscience and Nanotechnology, 2012
An interface-engineered resistive random access memory (RRAM) using bilayer transition metal oxide (TMO) is presented for improving unipolar resistive-switching characteristics. The experiment and simulation data show that better resistive switching characteristics and superb uniformity can be realized by inserting a thin AIOx insertion layer between ...
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook   +4 more
openaire   +4 more sources

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

IEEE Electron Device Letters, 2012
A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in
Bing Chen, Lifeng Liu, Jinfeng Kang
exaly   +2 more sources

Metal oxide resistive random access memory (RRAM) technology

2014
D C Gilmer
exaly   +2 more sources

Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Yi-Ying Liao, Pang-Shiu Chen, Shyh-Shyuan Sheu, Pi-Feng Chiu, Wen-Ping Lin, Chih-He Lin, Ming-Jinn Tsai, Tzu-Kun Ku   +14 more
openaire   +1 more source

Switching in polymeric resistance random-access memories (RRAMS)

Organic Electronics, 2008
Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L., Benvenho, A. R. V., De Leeuw, Dago M., Cölle, M., Stallinga, Peter, Verbakel, F., Taylor, D. M.   +6 more
openaire   +3 more sources

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

2019 International Conference on Electromagnetics in Advanced Applications (ICEAA), 2019
In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition ...
Da-Wei Wang, Wen-Yan Yin, Wenchao Chen, Wen-Sheng Zhao   +3 more
openaire   +1 more source

Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

MRS Proceedings, 2011
ABSTRACTThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s).
Rocha, P. F., Gomes, Henrique L., Kiazadeh, Asal, Chen, Q., De Leeuw, D. M., Meskers, S. C. J.   +5 more
openaire   +3 more sources

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

2018
Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The reported experimental data is consistent with a physical picture of the RRAM switching as caused by oxidation/reduction processes in a conductive
David C. Gilmer, Gennadi Bersuker
openaire   +1 more source