Results 181 to 190 of about 16,903,176 (225)

Modeling of Resistive Random Access Memory (RRAM) Switching Mechanisms and Memory Structures

2014
Yoshio Nishi, B Magyari-Köpe, K Shiraishi   +2 more
exaly   +2 more sources

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

2019 International Conference on Electromagnetics in Advanced Applications (ICEAA), 2019
In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition ...
Da-Wei Wang, Wen-Yan Yin, Wenchao Chen, Wen-Sheng Zhao   +3 more
openaire   +1 more source

Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

MRS Proceedings, 2011
ABSTRACTThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s).
Rocha, P. F., Gomes, Henrique L., Kiazadeh, Asal, Chen, Q., De Leeuw, D. M., Meskers, S. C. J.   +5 more
openaire   +3 more sources

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

2018
Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The reported experimental data is consistent with a physical picture of the RRAM switching as caused by oxidation/reduction processes in a conductive
David C. Gilmer, Gennadi Bersuker
openaire   +1 more source

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

2020 IEEE International Conference on Computational Electromagnetics (ICCEM), 2020
Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array.
Tan-Yi Li, Da-Wei Wang, Sichao Du, Wenchao Chen, Wen-Yan Yin   +4 more
openaire   +1 more source

Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

2010 IEEE Nanotechnology Materials and Devices Conference, 2010
Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction.
Kyung-Chang Ryoo, Jeong-Hoon Oh, Sung-hun Jung, Byung-Gook Park   +3 more
openaire   +1 more source

Dimensional Effect of Non-Polar Resistive Random Access Memory (RRAM) for Low-Power Memory Application

Journal of Nanoscience and Nanotechnology, 2012
The relationships between the resistive cell dimension and the related analytical parameters such as the forming voltage, set voltage, and reset current were investigated to implement high-density and low-power unipolar RRAM. It was shown that the formation process in unipolar switching is strongly related to the cell dimension in the sub-nm region ...
Kyung-Chang, Ryoo, Jeong-Hoon, Oh, Sunghun, Jung, Hongsik, Jeong, Byung-Gook, Park   +4 more
openaire   +2 more sources

Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013
The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimize the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the
Liu Kai, Zhang Kailiang, Wang Fang, Zhao Jinshi, Wei Jun   +4 more
openaire   +1 more source

Invited talk: Resistive random access memory (RRAM): Materials and devices

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED), 2013
Summary form only given. Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory ...
openaire   +1 more source

Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application

Journal of Nanoscience and Nanotechnology, 2012
An interface-engineered resistive random access memory (RRAM) using bilayer transition metal oxide (TMO) is presented for improving unipolar resistive-switching characteristics. The experiment and simulation data show that better resistive switching characteristics and superb uniformity can be realized by inserting a thin AIOx insertion layer between ...
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook   +4 more
openaire   +3 more sources