Results 31 to 40 of about 16,903,176 (225)

A hardware Markov chain algorithm realized in a single device for machine learning

Nature Communications, 2018
Despite the need to develop resistive random access memory (RRAM) devices for machine learning, RRAM array-based hardware methods for algorithm require external electronics.
He Tian, Xue-Feng Wang, Mohammad Ali Mohammad, Guang-Yang Gou, Fan Wu, Yi Yang, Tian-Ling Ren   +6 more
doaj   +1 more source

The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO2-Based RRAM and Applications for Pattern Recognition

Nanoscale Research Letters, 2017
A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array.
Zheng Zhou, Chen Liu, Wensheng Shen, Zhen Dong, Zhe Chen, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +8 more
doaj   +1 more source

Advances and Perspectives in Graphene-Based Quantum Dots Enabled Neuromorphic Devices. [PDF]

Adv Sci (Weinh)
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Zhen Y, Zeng W, Zhao Z, Zhao J, Huang Z, Chen Z, Zhou K, Ding G, Han ST, Zhou Y.   +9 more
europepmc   +2 more sources

Conductance quantization in resistive random access memory [PDF]

, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM ...
Liu, Ming, Lv, Hangbing, Chen Hu, Jiao Teng, Liu, Yang, Hu, Chen, Hangbing Lv, Yang Liu, Suñé, Jordi, Shibing Long, Liu, Qi, Yang Li, Ming Liu, Li, Yang, Jordi Suñé, Teng, Jiao, Long, Shibing, Qi Liu   +17 more
core   +1 more source

Variability characteristics of non-stoichiometric, low-cost silicon oxide resistive memory [PDF]

AIP Advances
Resistive-switching random access memory (RRAM) is an important class of data storage and computing devices. A recent technological trend requires RRAM devices to be manufactured in an environmentally and economically sound way.
Julia C. Rodrigues, Fitunerediate G. Gebeyehu, Pranav U. Choori, José Sánchez del Río Sáez, Ethan C. Ahn   +4 more
doaj   +1 more source

Effect of Hydrogen Annealing on Performances of BN-Based RRAM

Nanomaterials, 2023
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
doaj   +1 more source

Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement

AIP Advances, 2013
The refractory transition metal nitride (TMN) film Hafnium nitride (HfNx) was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/metal oxide/ HfNx (bottom) sandwich structure.
Qigang Zhou, Jiwei Zhai
doaj   +1 more source

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

IEEE Access, 2020
The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices.
Jianxun Sun, Yuan Bo Li, Yiyang Ye, Jun Zhang, Gang Yih Chong, Juan Boon Tan, Zhen Liu, Tupei Chen   +7 more
doaj   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing. [PDF]

Adv Sci (Weinh)
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Lee S, Park J, Kim N, Ju S, Jang SC, Kim HS, Kim S.   +6 more
europepmc   +2 more sources

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor [PDF]

, 2012
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates ...
Paulo R. F. Rocha, Asal Kiazadeh, Qian Chen 0025, Henrique L. Gomes   +3 more
openaire   +2 more sources