Results 31 to 40 of about 14,872,237 (221)

Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching

Advanced Electronic Materials, 2022
Multifunctional nonvolatile photoelectronic memory devices with multilevel storage and logic operation are expected to perform logic‐in‐memory computing tasks and overcome the von Neumann bottleneck.
Jiacheng Li, Yu Zhang, Chuangye Yao, Ni Qin, Ruqi Chen, Dinghua Bao   +5 more
doaj   +1 more source

Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

Advanced Intelligent Systems, 2022
Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma   +7 more
doaj   +1 more source

Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
This article presents a modified compact model of resistive random access memory (RRAM) with a tunneling barrier. The bilayer modulated RRAM can be integrated into a higher density array, reducing leakage current in standby mode.
Jia-Wei Lee, Tzu-Chin Chou, Po-An Chen, Meng-Hsueh Chiang   +3 more
doaj   +1 more source

Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]

, 2015
Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z., Leon O. Chua, Wang, Frank, Helian, Na, Na Helian, Chua, Leon O., Frank Zhigang Wang   +6 more
core   +1 more source

Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM) [PDF]

2011 3rd IEEE International Memory Workshop (IMW), 2010
Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories.
Wong, H.-S. Philip, Kim, SangBum, Lee, Byoungil, Caldwell, Marissa A., Liang, Jiale, Wu, Yi, Jeyasingh, Rakesh Gnana David, Yu, Shimeng   +7 more
openaire   +2 more sources

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN_x:H Resistive Switching Memory by the Transient Current

Nanomaterials, 2022
With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu   +7 more
doaj   +1 more source

A hardware Markov chain algorithm realized in a single device for machine learning

Nature Communications, 2018
Despite the need to develop resistive random access memory (RRAM) devices for machine learning, RRAM array-based hardware methods for algorithm require external electronics.
He Tian, Xue-Feng Wang, Mohammad Ali Mohammad, Guang-Yang Gou, Fan Wu, Yi Yang, Tian-Ling Ren   +6 more
doaj   +1 more source

The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO2-Based RRAM and Applications for Pattern Recognition

Nanoscale Research Letters, 2017
A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array.
Zheng Zhou, Chen Liu, Wensheng Shen, Zhen Dong, Zhe Chen, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +8 more
doaj   +1 more source

Gradual reset and set characteristics in yttrium oxide based resistive random access memory [PDF]

, 2021
This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack.
Zintler, Alexander, Alff, Lambert, Hildebrandt, Erwin, Piros, Eszter, Sharath, Sankaramangalam Ulhas, Petzold, Stefan, Wenger, Christian, Molina-Luna, Leopoldo   +7 more
core   +1 more source

Variability characteristics of non-stoichiometric, low-cost silicon oxide resistive memory [PDF]

AIP Advances
Resistive-switching random access memory (RRAM) is an important class of data storage and computing devices. A recent technological trend requires RRAM devices to be manufactured in an environmentally and economically sound way.
Julia C. Rodrigues, Fitunerediate G. Gebeyehu, Pranav U. Choori, José Sánchez del Río Sáez, Ethan C. Ahn   +4 more
doaj   +1 more source