Results 11 to 20 of about 16,903,176 (225)

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Nanoscale Research Letters, 2019
Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding, Yulin Feng, Peng Huang, Lifeng Liu, Jinfeng Kang   +4 more
doaj   +2 more sources

Research progress in flexible resistive random access memory materials

Cailiao gongcheng, 2020
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei   +9 more
doaj   +2 more sources

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices [PDF]

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +2 more sources

A versatile compact model of resistive random-access memory (RRAM) [PDF]

Solid-State Electronics
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). The model unifies the switching mechanisms of these RRAMs into a single framework.
Tung, Chien-Ting, Dabhi, Chetan Kumar, Salahuddin, Sayeef, Hu, Chenming   +3 more
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Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

Materials Research Express, 2022
We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park, Sobia Ali Khan, Mehr Khalid Rahmani, Jihwan Cho, Moon Hee Kang   +4 more
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Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices [PDF]

Журнал нано- та електронної фізики, 2016
In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
T.D. Dongale, K.V. Khot, S.V. Mohite, S.S. Khandagale, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat   +12 more
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A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

APL Materials, 2023
With the arrival of the era of big data, the conventional von Neumann architecture is now insufficient owing to its high latency and energy consumption that originate from its separated computing and memory units. Neuromorphic computing, which imitates biological neurons and processes data through parallel procedures between artificial neurons, is now ...
Jeong Hyun Yoon, Young-Woong Song, Wooho Ham, Jeong-Min Park, Jang-Yeon Kwon   +4 more
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Recent Advances in Flexible Resistive Random Access Memory

Applied System Innovation, 2022
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Peng Tang, Junlong Chen, Tian Qiu, Honglong Ning, Xiao Fu, Muyun Li, Zuohui Xu, Dongxiang Luo, Rihui Yao, Junbiao Peng   +9 more
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Effects of Sm₂O₃ and V₂O₅ Film Stacking on Switching Behaviors of Resistive Random Access Memories

Crystals, 2019
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen   +2 more
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The Efficacy of Programming Energy Controlled Switching in Resistive Random Access Memory (RRAM) [PDF]

, 2017
Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit.
Nminibapiel, David Malien
openaire   +3 more sources