Results 11 to 20 of about 1,297 (189)
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
doaj +1 more source
Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
APL Materials, 2022 This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim +5 more
doaj +1 more source
Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM
Materials Research Express, 2022 Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li +5 more
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ZnO based RRAM performance enhancement by 100 MeV Ag9+ irradiation
Applied Surface Science Advances, 2022 This paper demonstrates the fabrication of a thin film of Zinc Oxide (ZnO) by RF sputtering on Indium Tin Oxide (ITO) substrate for Resistive Random-Access Memory (RRAM) application.
Shikha Kaushik +3 more
doaj +1 more source
Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles [PDF]
, 2011 It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large
Asal Kiazadeh +3 more
openaire +2 more sources
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Nanoscale Research Letters, 2019 Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding +4 more
doaj +1 more source
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
IEEE Journal of the Electron Devices Society, 2016 Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang +8 more
doaj +1 more source
Advanced Electronic Materials, 2022 Multifunctional nonvolatile photoelectronic memory devices with multilevel storage and logic operation are expected to perform logic‐in‐memory computing tasks and overcome the von Neumann bottleneck.
Jiacheng Li +5 more
doaj +1 more source
Materials Research Express, 2022 We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park +4 more
doaj +1 more source
Advanced Intelligent Systems, 2022 Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan +7 more
doaj +1 more source