Results 11 to 20 of about 14,872,237 (221)

A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

APL Materials, 2023
With the arrival of the era of big data, the conventional von Neumann architecture is now insufficient owing to its high latency and energy consumption that originate from its separated computing and memory units. Neuromorphic computing, which imitates biological neurons and processes data through parallel procedures between artificial neurons, is now ...
Jang-Yeon Kwon, Young-Woong Song, Jeong-Min Park   +2 more
exaly   +4 more sources

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Nanoscale Research Letters, 2019
Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding, Yulin Feng, Peng Huang, Lifeng Liu, Jinfeng Kang   +4 more
doaj   +2 more sources

Research progress in flexible resistive random access memory materials

Cailiao gongcheng, 2020
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei   +9 more
doaj   +2 more sources

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

Materials Research Express, 2022
We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park, Sobia Ali Khan, Mehr Khalid Rahmani, Jihwan Cho, Moon Hee Kang   +4 more
doaj   +2 more sources

A versatile compact model of resistive random-access memory (RRAM) [PDF]

Solid-State Electronics
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). The model unifies the switching mechanisms of these RRAMs into a single framework.
Tung, Chien-Ting, Dabhi, Chetan Kumar, Salahuddin, Sayeef, Hu, Chenming   +3 more
openaire   +3 more sources

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices [PDF]

Журнал нано- та електронної фізики, 2016
In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
T.D. Dongale, K.V. Khot, S.V. Mohite, S.S. Khandagale, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat   +12 more
doaj   +3 more sources

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices [PDF]

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +2 more sources

Neuromorphic Near-Sensor and In-Sensor Computing Enabled by Next-Generation Material-Based Sensors. [PDF]

Adv Sci (Weinh)
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Jung SY, Kim GY, Kim S, Seo H, Lee SG, Won SM, Rhee D, Kang J.   +7 more
europepmc   +2 more sources

The Efficacy of Programming Energy Controlled Switching in Resistive Random Access Memory (RRAM) [PDF]

, 2017
Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit.
Nminibapiel, David Malien
openaire   +3 more sources

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +2 more sources