Results 51 to 60 of about 5,275 (241)
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices [PDF]
Журнал нано- та електронної фізики, 2016 In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
T.D. Dongale +12 more
doaj +1 more source
Advanced Materials, EarlyView.Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source
Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks
Nanomaterials, 2023 Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming ...
Taehun Lee +9 more
doaj +1 more source
Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking
Advanced Materials, EarlyView.Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee +23 more
wiley +1 more source
, 2019 Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks.
Dittmann, Regina +10 more
core +1 more source
, 2020 While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values ...
Atienza Alonso, David +12 more
core +1 more source
Advanced Materials Technologies, EarlyView.An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
Nanomaterials, 2023 Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITOX:SiO2 thin film resistive random access memory (RRAM) devices were observed and discussed.
Kai-Huang Chen +3 more
doaj +1 more source
RRAM device with different switching layer thicknesses
, 2019 This paper presents switching characteristics of Ni/HfOx/p(+)-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm
Min-Hwi Kim +15 more
core +1 more source