Results 51 to 60 of about 6,733 (243)

The Frontiers of Deep Reinforcement Learning for Resource Management in Future Wireless HetNets: Techniques, Challenges, and Research Directions

IEEE Open Journal of the Communications Society, 2022
Next generation wireless networks are expected to be extremely complex due to their massive heterogeneity in terms of the types of network architectures they incorporate, the types and numbers of smart IoT devices they serve, and the types of emerging ...
Abdulmalik Alwarafy, Mohamed Abdallah, Bekir Sait Ciftler, Ala Al-Fuqaha, Mounir Hamdi   +4 more
doaj   +1 more source

Simulations of RRAM-Based SSDs

, 2017
In this chapter SSDExplorer, a fine-grained SSD simulator, is used to evaluate the possible impact of emerging non-volatile memories, such as Resistive RAM (RRAM), on future SSD architectures. Does it make sense to fully replace NANDs with one of the emerging memories? What’s the benefit?
Zuolo, Lorenzo, ZAMBELLI, Cristian, Micheloni, Rino, OLIVO, Piero   +3 more
openaire   +2 more sources

Atomic‐Scale Visualization of Topotactic Resistive Switching in Epitaxial La0.5Sr0.5CoOx Neuromorphic Memristors

Advanced Functional Materials, EarlyView.
Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong, Yen‐Jung Chen, Shih‐Chao Chang, Jui‐yuan Chen, Jan‐Chi Yang, Wen‐Wei Wu   +5 more
wiley   +1 more source

Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Nanomaterials
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications.
Mikhail Fedotov, Viktor Korotitsky, Sergei Koveshnikov   +2 more
doaj   +1 more source

Graphene-based RRAM devices for neural computing

Frontiers in Neuroscience, 2023
Resistive random access memory is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability.
Rajalekshmi T. R, Rinku Rani Das, Chithra Reghuvaran, Alex James   +3 more
doaj   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source

RRAM device with different switching layer thicknesses

, 2019
This paper presents switching characteristics of Ni/HfOx/p(+)-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm
Min-Hwi Kim, Choi, Yeon-Joon, Park, Byung-Gook, Sungjun Kim, Seongjae Cho, Byung-Gook Park, Kim, Min-Hwi, Lee, Dong Keun, Suhyun Bang, Yeon-Joon Choi, Bang, Suhyun, Kim, Sungjun, Tae-Hyeon Kim, Kim, Tae-Hyeon, Cho, Seongjae, Dong Keun Lee   +15 more
core   +1 more source

Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations [PDF]

, 2020
While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values ...
Atienza Alonso, David, Levisse, Alexandre Sébastien Julien, Alayan, Mouhamad, Moreau, Mathieu, Atienza, David, Portal, Jean-Michel, Bocquet, Marc, Molas, Gabriel, Rios, Marco Antonio, Rios, Marco, Nowak, Etienne, Vianello, Elisa, Levisse, Alexandre, Mathieu Moreau, Mouhamad Alayan, Etienne Nowak, Marco Rios, Alexandre Levisse, Marc Bocquet, Elisa Vianello, David Atienza, Gabriel Molas, Jean-Michel Portal   +22 more
core   +1 more source

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee, Hyoik Jang, Ji Hwan Kim, Jonghyun Won, Namhee Kim, Wonseok Shin, Giwon Lee, Eunho Lee, Daegun Kim, Sungjun Park   +9 more
wiley   +1 more source

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Micromachines, 2021
Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated.
Furqan Zahoor, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi   +4 more
doaj   +1 more source