Results 61 to 70 of about 4,703 (195)

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO_X:SiO₂ Thin Films on Resistive Random Access Memory Devices

Nanomaterials, 2023
Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITOX:SiO2 thin film resistive random access memory (RRAM) devices were observed and discussed.
Kai-Huang Chen, Chien-Min Cheng, Na-Fu Wang, Ming-Cheng Kao   +3 more
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

LTspice implementation of PKU compact model of metal-oxide-based RRAM: part C_simulation of RRAM memory arrays

, 2022
RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatibility with CMOS technology, is a potential NVM technology.
Du, Yifan
core  

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

RRAM-based delay synapse using OTS switching delay

, 2023
학위논문(석사) -- 서울대학교대학원 : 공과대학 재료공학부, 2023. 2. 김상범.인공지능의 발전에 따라 보다 효율적인 연산을 위해 실제 생물 신경망을 모사한 회로의 개발에 연구가 집중되고 있다. 실제 뉴런과 시냅스의 모습을 본 딴 crossbar array 구조가 많이 이용되고 있지만 해당 구조는 실제 뉴런과 다르게 뉴런마다 다른 delay를 줄 수 없다는 한계를 가지고 있다.
김영훈
core  

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

Advanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park, Jaewoo Choi, Gigon Nam, Junsu Yu, Donghyun Ryu, Jung‐Kyu Lee, Sungjoon Kim, Sungjun Kim   +7 more
wiley   +1 more source

Dynamically Configurable Physical Unclonable Function based on RRAM Crossbar

, 2021
Physical unclonable function (PUF) has been an effective solution for hardware security with the popularity of the internet of things (IoT). Due to low power consumption and high area efficiency, an emerging nonvolatile memory, resistive random access ...
Gu, Chongyan; id_orcid, Liu, Weiqiang, Yijun Cui, Chenghua Wang, Li, Jiang, Cui, Yijun, Wang, Chenghua, Chongyan Gu, Weiqiang Liu, Jiang Li   +9 more
core   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

POS1 - RRAM Crossbar-Based Fault-Tolerant Binary Neural Networks (BNNs)

, 2022
Computation-In Memory (CIM) using RRAM crossbar array is a promising solution to realize energy-efficient neuromorphic hardware, such as Binary Neural Networks (BNNs). However, RRAM faults restrict the applicability of CIM for BNN implementation.
Zografou, Artemis, Hamdioui, Said, Gebregiorgis, Anteneh   +2 more
core   +1 more source

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

Advanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min‐Hwi Kim   +4 more
wiley   +1 more source