Results 61 to 70 of about 5,289 (241)

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

Rescuing RRAM-Based Computing from Static and Dynamic Faults [PDF]

, 2021
Emerging resistive random access memory (RRAM) has shown the great potential of in-memory processing capability, and thus attracts considerable research interests in accelerating memory-intensive applications, such as neural networks (NNs).
Lin, Jilan, Hu, Xing, Tang, Tianqi, Wang, Yu, Wen, Cheng Da, Lin, Ing Chao, Xie, Yuan   +6 more
core   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Nanoscale Research Letters, 2018
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the ...
Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Self‐Assembled Calcite Architectures for Programmable Information Storage

Advanced Materials Technologies, EarlyView.
Programmable biomineralization enables the formation of 3D calcite architectures that encode information through spatially defined refractive‐index modulations. Data are written via laser‐directed mineralization, stored in stable voxelized mineral structures, and retrieved non‐destructively through optical diffraction, offering a pathway toward ultra ...
Congrui Jin, Yong Huang, Mehdi Ranjkesh Rashteh Roudi   +2 more
wiley   +1 more source

3D RRAM design and benchmark with 3d NAND FLASH [PDF]

, 2014
The monolithic 3D integration of resistive switching random access memory (RRAM) is one attractive approach to build high-density non-volatile memory. In this paper, the design considerations of 3D vertical RRAM architecture are presented from the device,
Cong Xu, Shimeng Yu, Yu, Shimeng, Yuan Xie, Chen, Pai Yu, Xie, Yuan, Pai-Yu Chen, Xu, Cong   +7 more
core   +1 more source

Evaluating the Impact of Process Variation on RRAMs

2021 IEEE 22nd Latin American Test Symposium (LATS), 2021
[2021 IEEE 22nd Latin American Test Symposium, LATS, 2021-10-27 - 2021-10-29, Punta del Este, Uruguay] IEEE 22. Latin American Test Symposium, LATS, Punta del Este, Uruguay, 27 Oct 2021 - 29 Oct 2021; doi:10.1109/LATS53581.2021 ...
E. Brum, Moritz Fieback, Thiago Santos Copetti, H. Jiayi, Said Hamdioui, Fabian Vargas 0001, Letícia Maria Veiras Bolzani   +6 more
openaire   +2 more sources

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source