Results 81 to 90 of about 6,733 (243)

DRR-NTT: Efficient NTT Accelerator in Lattice-Based Cryptography By Dimensionality Reduction in RRAM

Transactions on Cryptographic Hardware and Embedded Systems
Lattice-based cryptographic (LBC) algorithms, including Post-Quantum Cryptography (PQC) schemes and Fully Homomorphic Encryption (FHE), represent one of the most important families of quantum-resistant cryptosystems. A key computational primitive shared
Yijun Cui, Yang Chen, Bei Wang, Ziying Ni, Lixia Han, Fei Lyu, Chenghua Wang, Weiqiang Liu   +7 more
doaj   +1 more source

Enhancing the Electrical Uniformity and Reliability of the HfO₂-Based RRAM Using High-Permittivity Ta₂O₅ Side Wall

IEEE Journal of the Electron Devices Society, 2018
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises when
Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, Hang Zhou   +9 more
doaj   +1 more source

Device Stochasticity Directly Implements Bayesian Sampling in Spiking Neurons

Advanced Science, EarlyView.
Brain‐inspired stochastic spiking turns device noise into Bayesian uncertainty for robust, low‐power neuromorphic computing. ABSTRACT Device stochasticity is considered a non‐ideality in neuromorphic hardware, although stochastic neural activity supports probabilistic computation in biological systems.
Huannan Zheng, Jingli Liu, Kezhou Yang
wiley   +1 more source

Multi-Scale Thermal Modeling of RRAM-based 3D Monolithic-Integrated Computing-in-Memory Chips

, 2022
Calculation of chip-scale temperature distribution with considering the device behaviors and integration structure is a challenging modeling task. In this paper, we demonstrated the first multi-scale thermal simulation for RRAM-based computing-in-memory ...
Qian, He, Tang, Jianshi, Xu, Feng, Hao, Zhenqi, Yao, Peng, Gao, Bin, Ma, Awang, Liu, Zhengwu, Du, Yiwei, Liu, Yuyi, Li, Xinyi, Wu, Huaqiang   +11 more
core   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Resistance Non-volatile Memory – RRAM

, 2007
Electric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses.
Yibo Nian, Christina Papagianni, John Strozier, Shangqing Liu, Alex Ignatiev, Xin Chen, Naijuan Wu   +6 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Low-Rank Compensation in Hybrid 3D-RRAM/SRAM Computing-in-Memory System for Edge Computing

Eng
Artificial intelligence (AI) has made significant strides, with computing-in-memory (CIM) emerging as a key enabler for energy-efficient AI acceleration.
Weiye Tang, Long Nie, Cailian Ma, Hao Wu, Yiyang Yuan, Shuaidi Zhang, Qihao Liu, Feng Zhang   +7 more
doaj   +1 more source