Results 81 to 90 of about 5,289 (241)
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee +5 more
wiley +1 more source
RRAM Variability Harvesting for CIM‐Integrated TRNG
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende +4 more
wiley +1 more source
Resistance Non-volatile Memory – RRAM [PDF]
Electric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses.
Yibo Nian +6 more
core +1 more source
Design of an FPGA-based RRAM parameter measurement platform [PDF]
Flash memory has been the dominant technology in non-volatile memory market for the last couple of decades. Along with down-scaling in the CMOS manufacturing process, industry and academia started to evaluate the use of alternative memory cell ...
Tekin, Serdar B.
core +3 more sources
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
A hybrid oscillator combining an atomic swith and an insulator‐to metal transition device converts stochastic filament resistance into random oscillation periods. The interaction between highly variable atomic switching and stable high‐frequency oscillation amplifies entropy, enabling fast energy‐efficient, and reliable true random number generation ...
Sunhyeong Lee +4 more
wiley +1 more source
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable.
Furqan Zahoor +6 more
doaj +1 more source
Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel +6 more
wiley +1 more source

