Results 81 to 90 of about 4,703 (195)

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Stuck-at Fault Tolerance in RRAM Computing Systems

, 2018
Emerging metal-oxide resistive switching random-access memory (RRAM) devices and RRAM crossbars have demonstrated their potential in boosting the speed and energy-efficiency of analog matrix-vector multiplication. However, due to the immature fabrication
Huazhong Yang, Tang, Tianqi, Wang, Yu, Lixue Xia, Wenqin Huangfu, Huangfu, Wenqin, Chakrabarty, Krishnendu, Xie, Yuan, Xiling Yin, Krishnendu Chakrabarty, Yin, Xiling, Xia, Lixue, Yuan Xie, Yang, Huazhong, Yu Wang, Tianqi Tang   +15 more
core   +1 more source

A Lightweight Reconfigurable RRAM-based PUF for Highly Secure Applications

, 2020
International audienceRecently, memristors received considerable attention in various applications. Even some of the main drawbacks of resistive memory devices (RRAM), such as variability, have become attractive features for hardware security in the form
Aziza, Hassen, Basma Hajri, Mohammad M. Mansour, Hajri, Basma, Mansour, Mohammad, M, Chehab, Ali, Ali Chehab, Hassen Aziza   +7 more
core   +1 more source

Enhancing the Electrical Uniformity and Reliability of the HfO₂-Based RRAM Using High-Permittivity Ta₂O₅ Side Wall

IEEE Journal of the Electron Devices Society, 2018
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises when
Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, Hang Zhou   +9 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

DRR-NTT: Efficient NTT Accelerator in Lattice-Based Cryptography By Dimensionality Reduction in RRAM

Transactions on Cryptographic Hardware and Embedded Systems
Lattice-based cryptographic (LBC) algorithms, including Post-Quantum Cryptography (PQC) schemes and Fully Homomorphic Encryption (FHE), represent one of the most important families of quantum-resistant cryptosystems. A key computational primitive shared
Yijun Cui, Yang Chen, Bei Wang, Ziying Ni, Lixia Han, Fei Lyu, Chenghua Wang, Weiqiang Liu   +7 more
doaj   +1 more source

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source

3D RRAM design and benchmark with 3d NAND FLASH

, 2014
The monolithic 3D integration of resistive switching random access memory (RRAM) is one attractive approach to build high-density non-volatile memory. In this paper, the design considerations of 3D vertical RRAM architecture are presented from the device,
Cong Xu, Shimeng Yu, Yu, Shimeng, Yuan Xie, Chen, Pai Yu, Xie, Yuan, Pai-Yu Chen, Xu, Cong   +7 more
core   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source