Results 91 to 100 of about 5,289 (241)

Fault Tolerance for RRAM-Based Matrix Operations [PDF]

, 2018
An RRAM-based computing system (RCS) provides an energy efficient hardware implementation of vector-matrix multiplication for machine-learning hardware. However, it is vulnerable to faults due to the immature RRAM fabrication process.
Mengyun Liu, Wang, Yu, Lixue Xia, Xia, Lixue, Yu Wang, Krishnendu Chakrabarty, Chakrabarty, K, Liu, Mengyun   +7 more
core   +1 more source

Enhancing the Electrical Uniformity and Reliability of the HfO₂-Based RRAM Using High-Permittivity Ta₂O₅ Side Wall

IEEE Journal of the Electron Devices Society, 2018
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises when
Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, Hang Zhou   +9 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Impact of RTN and Variability on RRAM-Based Neural Network [PDF]

Resistive switching memory devices can be categorized into filamentary RRAM or non-filamentary RRAM depending on the switching mechanisms. Both types of RRAM devices have been studied as novel synaptic devices in hardware neural networks.
Zhang, JF, Freitas, P, Zhang, WD, Marsland, J, Chai, Z   +4 more
core   +1 more source

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source

Word-oriented march test for RRAM-based automotive microcontroller memories [PDF]

reservedAutomotive is an extremely complex field in which safety and performances must be perfectly synchronized. Nowadays electronic is the key to achieve the objective.
RECCI, NICOLA
core  

DRR-NTT: Efficient NTT Accelerator in Lattice-Based Cryptography By Dimensionality Reduction in RRAM

Transactions on Cryptographic Hardware and Embedded Systems
Lattice-based cryptographic (LBC) algorithms, including Post-Quantum Cryptography (PQC) schemes and Fully Homomorphic Encryption (FHE), represent one of the most important families of quantum-resistant cryptosystems. A key computational primitive shared
Yijun Cui, Yang Chen, Bei Wang, Ziying Ni, Lixia Han, Fei Lyu, Chenghua Wang, Weiqiang Liu   +7 more
doaj   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Stretchable and Wearable Resistive Switching Random‐Access Memory

Advanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi, Jiangxin Wang, Izzat Aziz, Pooi See Lee   +3 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source