Results 91 to 100 of about 4,703 (195)

Rescuing RRAM-Based Computing from Static and Dynamic Faults

, 2021
Emerging resistive random access memory (RRAM) has shown the great potential of in-memory processing capability, and thus attracts considerable research interests in accelerating memory-intensive applications, such as neural networks (NNs).
Lin, Jilan, Hu, Xing, Tang, Tianqi, Wang, Yu, Wen, Cheng Da, Lin, Ing Chao, Xie, Yuan   +6 more
core   +1 more source

Stretchable and Wearable Resistive Switching Random‐Access Memory

Advanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi, Jiangxin Wang, Izzat Aziz, Pooi See Lee   +3 more
doaj   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Current pulse generator: A circuit for programming RRAM in current mode [PDF]

APL Materials
Switching uniformity, as a major challenge, hinders the practical implementation of resistive random access memory (RRAM) in memory application. Operating RRAM in current mode is proposed as an efficient method to improve programming schemes accuracy ...
B. Zhang, P. Gibertini, M. Akbari, E. Covi   +3 more
doaj   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Impact of RTN and Variability on RRAM-Based Neural Network [PDF]

Resistive switching memory devices can be categorized into filamentary RRAM or non-filamentary RRAM depending on the switching mechanisms. Both types of RRAM devices have been studied as novel synaptic devices in hardware neural networks.
Zhang, JF, Freitas, P, Zhang, WD, Marsland, J, Chai, Z   +4 more
core   +1 more source

Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

Advanced Electronic Materials, EarlyView.
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama   +4 more
wiley   +1 more source

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

IEEE Journal of the Electron Devices Society, 2016
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang, Peng Huang, Bin Gao, Haitong Li, Zhe Chen, Yudi Zhao, Chen Liu, Lifeng Liu, Xiaoyan Liu   +8 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Thermal Crosstalk Analysis in RRAM Passive Crossbar Arrays

, 2023
As the packing density of resistive random access memory (RRAM) devices increases, the effect of thermal cross-talk across the devices in a crossbar array arrangement influences their overall operation significantly.
Chakrabarti, Bhaswar, Pande, Shubham, Chakravorty, Anjan   +2 more
core