Results 91 to 100 of about 6,733 (243)

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source

A multi-mode configurable physical unclonable function based on RRAM with adjustable programmable voltage [PDF]

Resistive random access memory (RRAM) presents a promising solution for energy-efficient logic-in-memory (LiM) systems. This paper introduces a Multi-mode Configurable Physical Unclonable Function (MC-PUF) tailored for secure RRAM-based LiM applications,
Gu, Chongyan; id_orcid, Liu, Weiqiang, Cui, Yijun, Li, Jiang, Wang, Chenghua   +4 more
core   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Quantum Dots for Resistive Switching Memory and Artificial Synapse

Nanomaterials
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim   +2 more
doaj   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing

International audienceWhile Resistive RRAM (RRAM) offers attractivefeatures for artificial neural networks (NN) such as low poweroperation and high-density, its conductance variation can posesignificant challenges when the storage of synaptic weights ...
Aziza, Hassen, Taouil, Mottaqiallah, Postel-Pellerin, J., Xun, Hanzhi, Hamdioui, Said, Fieback, Moritz, Coulié, K., Wenceslas, Rahajandraibe   +7 more
core   +1 more source

RRAM Device Models: A Comparative Analysis With Experimental Validation

IEEE Access, 2019
Resistive Random Access Memories (RRAM) have recently shown outstanding characteristics such as high-scalability, high-speed, high-density, and low-energy operation. A simple and accurate model is crucial for rapid design and verification when using RRAM
Basma Hajri, Hassen Aziza, Mohammad M. Mansour, Ali Chehab   +3 more
doaj   +1 more source

Soft-Error Analysis of RRAM 1T1R Compute-In-Memory Core for Artificial Neural Networks

This work analyses SEU-induced soft-errors in analog compute-in-memory cores using resistive random-Access memory (RRAM) for artificial neural networks, where their bitcells utilize one-Transistor-one-RRAM (1T1R) structure.
Fritscher, Markus, Jia, Ruolan, Pechmann, Stefan, Wenger, Christian, Zhang, Lei, Hagelauer, Amelie M., Jia, Ruolan;Pechmann, Stefan;Markus, Fritscher;Wenger, Christian;Zhang, Lei;Hagelauer, Amelie   +6 more
core   +1 more source

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

, 2018
Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET process is caused by parasitic capacitance.
Koo, Y, Hwang, H, Prakash, A, Misha, SH, Lee, D, Woo, J, Park, J, Song, J, Lee, S, Moon, K, Cha, E   +10 more
core   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source