Results 71 to 80 of about 4,703 (195)
A novel peripheral circuit for RRAM-based LUT
, 2012 Resistive random access memory (RRAM) is a promising candidate to substitute static random access memory (SRAM) in lookup table (LUT) design for its high density and non-volatility.
Wei Zhang +6 more
core +1 more source
, 2021 RRAM is a promising candidate for compute-in-memory (CIM) applications owing to its natural multiply-and-accumulate (MAC)-supporting structure, high bit-density, non-volatility, and a monolithic CMOS and RRAM process. In particular, multi-bit encoding in
Raychowdhury, Arijit +11 more
core +1 more source
Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
Advanced Electronic Materials, EarlyView.A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Thin film development of metal oxide crossbars for RRAM and flexible electronics applications
Metal oxides are promising materials due to their unique semiconductor and mechanical properties for the future of electronics. When developed as thin films, they offer significant advantages such as precise control over the material stoichiometry ...
Panca, Alin Georgian
core +1 more source
, 2020 Resistive RAM, or RRAM, is one of the emerging non-volatile memory (NVM) technologies, which could be used in the near future to fill the gap in the memory hierarchy between dynamic RAM (DRAM) and Flash, or even completely replace Flash.
Hol, Tijs (author)
core
Quantum Dots for Resistive Switching Memory and Artificial Synapse
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Computation-oriented fault-tolerance schemes for RRAM computing systems
, 2017 The emerging metal-oxide resistive switching random-access memory (RRAM) devices and RRAM crossbar arrays have demonstrated their potential in enormously boosting the speed and energy-efficiency of analog matrix-vector multiplication.
Huazhong Yang +19 more
core +1 more source
A RRAM Array for Logic-in-memory Applications
, 2023 A modern computer mainly consists of two parts, processors and memory. Data is computed by processors and stored in memory before and after computing. With the increase of data-intensive applications like machine learning, data movement between memory ...
Liting Shen (4935172)
core +1 more source