Results 111 to 120 of about 5,289 (241)
Physical Unclonable Function Based on 3D‐NAND Flash Array Structure With Multi‐Chip Implementation
Small, EarlyView.Physical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwiho Hwang +4 more
wiley +1 more source
Nature CommunicationsCMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise, leading to computational accuracy loss, increased ...
Jaeseoung Park +13 more
doaj +1 more source
Small, EarlyView.This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang +6 more
wiley +1 more source
A synergistic fault tolerance framework for Mbit 28nm embedded RRAM [PDF]
International audienceResistive Random Access Memory (RRAM) technologies represent a promising frontier in next-generation non-volatile memory devices. They combine an operating speed and endurance superior to Flash memories with cost-effectiveness that ...
Jahan, Carine +5 more
core +1 more source
In-memory computing by RRAM for machine learning [PDF]
, 2018 The Internet data has reached exa-scale (1018 bytes), which has introduced emerging need to re-examine the state-of-the-art hardware architectures for data-oriented computing. There is an increasing need in the current artificial intelligence and machine
Ni, Leibin
core +1 more source
Engineering ProceedingsIn this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h.
Kai-Huang Chen +4 more
doaj +1 more source
An Innovative Approach to Multi‐Valued Logic
IEEJ Transactions on Electrical and Electronic Engineering, EarlyView.The current generation of computer systems operates on the principles of binary logic, which encompasses both logical and arithmetic operations. However, silicon technology has reached its peak performance, prompting researchers to explore alternative methods for enhancing computational efficiency. One such method is the adoption of Multi‐Valued Logic (
Ali Mokhtari, Peyman Kabiri
wiley +1 more source
Random telegraph noise (RTN) in scaled RRAM devices [PDF]
, 2013 The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM).
L. Larcher +12 more
core +1 more source
Bioresorbable Scaffolds for Coronary Arteries: Where Do We Stand Today?
VIEW Medicine, Volume 1, Issue 1, August 2026.Bioresorbable coronary scaffolds are moving from thick strut pitfalls to thinner, stronger, healing‐oriented designs. Integrating advances in materials, guided implantation with preparation, size, and postdilation steps, and resorption aligned to healing, we synthesize clinical evidence and chart a roadmap toward intelligent, transient platforms ...
Junya Matsuda +5 more
wiley +1 more source
Progresses in Modeling HfOx RRAM Operations and Variability [PDF]
, 2014 This paper reports on recent progresses in modeling bi-polar RRAM devices based on hafnium oxide. The unique modeling environment adopted for the simulation of device operations accounts self-consistently for the charge and ion transport, and the ...
PUGLISI, Francesco Maria +5 more
core +1 more source