Results 111 to 120 of about 6,733 (243)

A Non‐Volatile Heterogeneous Quantum Dot III‐V/Si DFB Laser With Optical Memristive Behavior

Advanced Physics Research, EarlyView.
A heterogeneous quantum dot III‐V/Si DFB laser stores its own optical state. An ultrathin Al2O3 memristor at the III‐V/Si interface produces non‐volatile wavelength shifts of ∼46 pm and ∼17 dB peak power contrast with zero holding power. Combining coherent light generation and persistent memory in one device opens a path toward neuromorphic photonics ...
Stanley Cheung, Di Liang, Yuan Yuan, Yingtao Hu, Geza Kurczveil, Xucheng Yang, Raymond Beausoleil, Bassem Tossoun   +7 more
wiley   +1 more source

Multilevel resistive switching in Hf-based RRAM

, 2019
In this paper, the multilevel switching behaviors of resistive random-access memory (RRAM) devices with three different dielectric materials such as HfO2, HfZrO2 and HfAlO2 are investigated. We have further explored the switching characteristics with two
Wajda, C. S., Clark, R. D., Misra, D., Tapily, K., Huang, C. S., Leusink, G. J., Jain, B., Consiglio, S.   +7 more
core   +1 more source

Quasi‐2D perovskite memristors: From layered structures to advanced computing applications

InfoScience, EarlyView.
Quasi‐2D perovskites enable stable memristive switching through dimensional engineering that controls ion migration pathways. The layered structure suppresses leakage, improves environmental stability, and enables analog conductance modulation for neuromorphic computing, artificial vision, and in‐memory architectures, transforming ion migration from a ...
Jie Ma, Yujian Du, Yuljae Cho
wiley   +1 more source

Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

Nature Communications
CMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise, leading to computational accuracy loss, increased ...
Jaeseoung Park, Ashwani Kumar, Yucheng Zhou, Sangheon Oh, Jeong-Hoon Kim, Yuhan Shi, Soumil Jain, Gopabandhu Hota, Erbin Qiu, Amelie L. Nagle, Ivan K. Schuller, Catherine D. Schuman, Gert Cauwenberghs, Duygu Kuzum   +13 more
doaj   +1 more source

Word-oriented march test for RRAM-based automotive microcontroller memories

reservedAutomotive is an extremely complex field in which safety and performances must be perfectly synchronized. Nowadays electronic is the key to achieve the objective.
RECCI, NICOLA
core  

Conjugated Polymers Engineered for Flexible/Stretchable Electronics

Journal of Polymer Science, EarlyView.
This review highlights glass transition temperature (Tg) as the central parameter linking molecular structure to device performance in conjugated polymers. By tuning backbone rigidity, side‐chain architecture, and dynamic bonding, Tg governs the balance between π–π stacking–enabled charge transport and mechanical compliance.
Yunchong Yang, Josh Bass, Weijia Yan, Ashwath Anand, Chunka Zhou, Jingjing Qiu   +5 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Modeling the physics of RRAM defects: A model simulating RRAM defects on a macroscopic physical level

, 2020
Resistive RAM, or RRAM, is one of the emerging non-volatile memory (NVM) technologies, which could be used in the near future to fill the gap in the memory hierarchy between dynamic RAM (DRAM) and Flash, or even completely replace Flash.
Hol, Tijs (author)
core  

Ultra‐Efficient Memristive Voltage‐Resistance Logic Framework With Integrated Readout Strategy Based on Hafnium Zirconium Oxide

Small Methods, EarlyView.
Spatiotemporal efficiency is a key concern in memristor‐based logic‐in‐memory architectures, where separate read operations to access resistance states fundamentally limit efficiency. This work demonstrates that logic outputs can be directly inferred from the intrinsic discharge dynamics of a two‐terminal memristive device.
Wonwoo Kho, Hyunjoo Hwang, Hyunjun Kim, Narim Lee, Dongjun Min, Dante Ahn, Jaeseok Kim, Chaerin Han, Dahee Jeong, Seho Cho, Minseo So, Hee Chul Lee, Seung‐Eon Ahn   +12 more
wiley   +1 more source

An Innovative Approach to Multi‐Valued Logic

IEEJ Transactions on Electrical and Electronic Engineering, EarlyView.
The current generation of computer systems operates on the principles of binary logic, which encompasses both logical and arithmetic operations. However, silicon technology has reached its peak performance, prompting researchers to explore alternative methods for enhancing computational efficiency. One such method is the adoption of Multi‐Valued Logic (
Ali Mokhtari, Peyman Kabiri
wiley   +1 more source