Results 111 to 120 of about 4,703 (195)

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

Investigation of key performance metrics in TiOX/TiN based resistive random-access memory cells

Scientific Reports
Resistive random-access memory (RRAM) is a promising beyond-CMOS technology due to its non-volatility, scalability, and high ON/OFF ratio. Furthermore, a single RRAM cell can operate as an analog resistor, meaning that it can be used in more novel ...
Brandon R. Zink, William A. Borders, Advait Madhavan, Brian D. Hoskins, Jabez McClelland   +4 more
doaj   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, Volume 38, Issue 49, 1 September 2026.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

RRAM-based synapse devices for neuromorphic systems

, 2019
Hardware artificial neural network (ANN) systems with high density synapse array devices can perform massive parallel computing for pattern recognition with low power consumption.
Moon, K., SEUNYEOL, OH, SEOKJAE, LIM, Sung, C., LEE, JONGWON, Woo, J., Hwang, H., PARKJAEHYUK   +7 more
core   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, Volume 13, Issue 53, 24 September 2026.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Word-oriented march test for RRAM-based automotive microcontroller memories

reservedAutomotive is an extremely complex field in which safety and performances must be perfectly synchronized. Nowadays electronic is the key to achieve the objective.
RECCI, NICOLA
core  

Low-Rank Compensation in Hybrid 3D-RRAM/SRAM Computing-in-Memory System for Edge Computing

Eng
Artificial intelligence (AI) has made significant strides, with computing-in-memory (CIM) emerging as a key enabler for energy-efficient AI acceleration.
Weiye Tang, Long Nie, Cailian Ma, Hao Wu, Yiyang Yuan, Shuaidi Zhang, Qihao Liu, Feng Zhang   +7 more
doaj   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

How significant is SET programming strategy in enhancing RRAM technology?

International audienceThis paper benchmarks a range of programming strategies for resistive random-access memory (RRAM), employing both voltage-and current-mode methods in single pulse, and progressive verify formats.
Pillonnet, Gaël, Molas, Gabriel, Bauvent, Thomas   +2 more
core   +1 more source