Results 121 to 130 of about 5,289 (241)

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, Volume 36, Issue 55, 9 July 2026.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

SiNx RRAMs performance with different stoichiometries

Solid-State Electronics
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the formation of defects such as nitrogen vacancies, silicon dangling bonds etc., and thus can enable performance tuning of ...
Mavropoulis, A. E., Pissanos, G., Vasileiadis, N., Normand, P., Sirakoulis, G. Ch., Dimitrakis, P.   +5 more
openaire   +2 more sources

Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking

Advanced Materials, Volume 38, Issue 38, 8 July 2026.
Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee, Gunhyoung Kim, Dongho Lee, Seowoo Son, Hyunho Seok, Sihoon Son, Hyunbin Choi, Geonwook Kim, Geumji Back, Hyunkyu Kim, Chaerin Park, Junmin Ahn, Seongyun Je, Chaeyoung Im, Junil Cho, Magdalena Grzeszczyk, Seongho Kim, Eunseo Go, Hyunwoo Shim, Donghwan Choi, Muyoung Kim, Hyoeng‐U. Kim, Won‐Jun Jang, Taesung Kim   +23 more
wiley   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, Volume 11, Issue 14, 22 July 2026.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, Volume 13, Issue 37, 3 July 2026.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing [PDF]

International audienceWhile Resistive RRAM (RRAM) offers attractivefeatures for artificial neural networks (NN) such as low poweroperation and high-density, its conductance variation can posesignificant challenges when the storage of synaptic weights ...
Aziza, Hassen, Taouil, Mottaqiallah, Postel-Pellerin, J., Xun, Hanzhi, Hamdioui, Said, Fieback, Moritz, Coulié, K., Wenceslas, Rahajandraibe   +7 more
core  

Low-Rank Compensation in Hybrid 3D-RRAM/SRAM Computing-in-Memory System for Edge Computing

Eng
Artificial intelligence (AI) has made significant strides, with computing-in-memory (CIM) emerging as a key enabler for energy-efficient AI acceleration.
Weiye Tang, Long Nie, Cailian Ma, Hao Wu, Yiyang Yuan, Shuaidi Zhang, Qihao Liu, Feng Zhang   +7 more
doaj   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, Volume 13, Issue 41, 22 July 2026.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Intrinsic chiroptical responsivity in self‐powered organic photodiodes for polarization‐tunable optical convolution

InfoMat, Volume 8, Issue 7, July 2026.
Self‐powered chiral organic photodiodes function as polarization‐sensitive convolutional filters for circularly polarized light‐driven optical convolutional neural networks. This conceptually innovative architecture enables dynamic weight modulation, bias‐free operation, and exceptional noise resilience, boosting feature extraction fidelity from 0.15 ...
Lixuan Liu, Weilong Huang, Feihong Zhu, Yongjie Cai, Xiaolong Li, Yang Yang, Xiao Ma, Zhixiang Wei, Wei Chen, Huipeng Chen   +9 more
wiley   +1 more source

Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO₂/Ti RRAM Device via Post Annealing Process

Inorganics
As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important.
Yuseong Jang, Chanmin Hwang, Sanggyu Bang, Hee-Dong Kim   +3 more
doaj   +1 more source