Results 121 to 130 of about 4,703 (195)
InorganicsAs interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important.
Yuseong Jang +3 more
doaj +1 more source
Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci +6 more
wiley +1 more source
Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu +3 more
wiley +1 more source
Training-based forming process for RRAM yield improvement
, 2014 [[abstract]]Over the past decade, the resistive memory device known as RRAM has been studied extensively in many ways, and many of its problems have been identified, discussed, and some solved.
H.-C. Shih;C.-Y. Chen;C.-W. Wu;C.-H. Lin;S.-S. Sheu
core +1 more source
Design of an FPGA-based RRAM parameter measurement platform
, 2018 Flash memory has been the dominant technology in non-volatile memory market for the last couple of decades. Along with down-scaling in the CMOS manufacturing process, industry and academia started to evaluate the use of alternative memory cell ...
Tekin, Serdar B.
core +3 more sources
Metal‐Filamentary Memristor‐Based Artificial Neurons for Embodied Neuromorphic Intelligence
Rare Metals, Volume 45, Issue 9, September 2026.ABSTRACT Embodied neuromorphic intelligence represents a transformative paradigm for next‐generation intelligent systems, with broad implications for robotics, autonomous driving, intelligent manufacturing, and smart infrastructures. Neuromorphic chips enable bioinspired computing with sparse, heterogeneous representations and spatiotemporal dynamics ...
Tianci Huang, Zuqing Yuan, Qilin Hua
wiley +1 more source
Small, Volume 22, Issue 53, 21 September 2026.This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang +6 more
wiley +1 more source
Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing
International audienceWhile Resistive RRAM (RRAM) offers attractivefeatures for artificial neural networks (NN) such as low poweroperation and high-density, its conductance variation can posesignificant challenges when the storage of synaptic weights ...
Aziza, Hassen +7 more
core +1 more source
A synergistic fault tolerance framework for Mbit 28nm embedded RRAM
International audienceResistive Random Access Memory (RRAM) technologies represent a promising frontier in next-generation non-volatile memory devices. They combine an operating speed and endurance superior to Flash memories with cost-effectiveness that ...
Jahan, Carine +5 more
core +1 more source
CMOS friendly electrode material screening for HfOx-based RRAM
, 2013 This project is aim to study the Resistive Radom-Access Memory (RRAM), which is expected to be the replacement of flash memory and a next generation memory.
Yan, Haiping
core