Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells
NiO-based resistive-switching memory (RRAM) is attracting a growing research interest for high-density nonvolatile storage applications. One of the most difficult challenges for RRAM-based high-density memories is the high current necessary for the ...
S. Spiga +6 more
core
Hierarchical Multi-Mode Computing in Interlayer-Coupled 3D RRAM Crossbar Arrays. [PDF]
Park S +7 more
europepmc +1 more source
Integration von Multi-Level 1T1R RRAM Zellen als eingebetteter Speicher
This thesis proposes a structural approach for integration of one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) cells as embedded memory in integrated circuits.
Pechmann, Stefan Peter
core
Physics-Informed Multi-Parameter Optimization of Oxide-Based Memristor Characteristics Using Genetic Algorithms. [PDF]
Gooran-Shoorakchaly A +2 more
europepmc +1 more source
Harnessing the full potential of RRAMs through scalable and distributed in-memory computing with integrated error correction. [PDF]
Vo HQN +4 more
europepmc +1 more source
Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory. [PDF]
Lee Y, Kim S, Kim S, Kim S, Cho S.
europepmc +1 more source
Event-Driven Neuromorphic Gaze Decoding via e-Skin Electrooculography. [PDF]
Jeong S +23 more
europepmc +1 more source
A pruning method for RRAM neural networks based on weight reconstruction
Resistive Random Access Memory (RRAM), with its inherent processing-in-memory capability, has emerged as an efficient hardware platform for neural network acceleration.Pruning techniques effectively compress neural networks by removing redundant weights,
LIU Jing, LIU Peng, YAO Lian, WU Jigang
doaj
Epitaxial Bi<sub>2</sub>O<sub>2</sub>Se/Bi<sub>2</sub>O<sub>5</sub>Se Thin Films: Revealing Electric-Field-Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices. [PDF]
Chen YJ +8 more
europepmc +1 more source
A generic compact model for resistive memories and switches. [PDF]
Jung S, Kim H, Park J, Kim S, Kim MH.
europepmc +1 more source

