A Reconfigurable Memristor-Based Computing-in-Memory Circuit for Content-Addressable Memory in Sensor Systems. [PDF]
Hu H +12 more
europepmc +1 more source
Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM. [PDF]
Lim H, Shim W, Kim TH.
europepmc +1 more source
The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Jeżak P +3 more
europepmc +1 more source
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]
Wang YC +6 more
europepmc +1 more source
Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices. [PDF]
Chen KH, Kao MC, Chen HC, Wang YC.
europepmc +1 more source
Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing. [PDF]
Jang Y, Hwang C, Chae M, Kim T, Kim HD.
europepmc +1 more source
Nickel-Assisted Laser Oxidation of WSe<sub>2</sub> Layered Films for Spatially Controlled WO<sub>3</sub> Patterning Process toward Resistive Memory and Molecular Sensing. [PDF]
Hsu YC +7 more
europepmc +1 more source
Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications. [PDF]
Noh HY +6 more
europepmc +1 more source
Optoelectronic array of photodiodes integrated with RRAMs for energy-efficient in-sensor computing. [PDF]
Pan W +11 more
europepmc +1 more source
Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena. [PDF]
Kim H, Kim S, Cho JY, Lee SH, Kim MH.
europepmc +1 more source

