Results 181 to 190 of about 5,289 (241)

Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y₂O₃ RRAM Devices Using Mono-Ethanolamine Additives. [PDF]

Materials (Basel)
Heo S, Choi S, Lee S, Cho Y, Bae JH, Kang IM, Kim K, Lee WY, Jang J.   +8 more
europepmc   +1 more source

Robot-assisted Pelvic Reconstruction Using Rectus Abdominis Flap: Efficiency Evaluation of Adding a Third Surgeon. [PDF]

Plast Reconstr Surg Glob Open
Kelecy MW, Iftekhar N, Allen B, Ezeanolue E, Baynosa RC.   +4 more
europepmc   +1 more source

All HfO_<i>x</i>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer. [PDF]

ACS Appl Mater Interfaces
Schreyer P, Kaiser N, Nasiou D, Piros E, Duan Y, Kim T, Li Y, Shih LC, Winkler R, Aguirre FL, Vogel T, Arzumanov A, Chen JS, Molina-Luna L, Alff L.   +14 more
europepmc   +1 more source

An overview of critical applications of resistive random access memory. [PDF]

Nanoscale Adv
Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA.   +8 more
europepmc   +1 more source

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Metal–Oxide RRAM

Proceedings of the IEEE, 2012
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Shimeng Yu, H -S Philip Wong
exaly   +2 more sources

A Volatile RRAM Synapse for Neuromorphic Computing [PDF]

2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2019
Neuromorphic computing has emerged as a promising approach for autonomous systems able to learn, adapt, and interact in real time with the environment. To build neuromorphic hardware, the recent development of novel material-based devices such as resistive switching memory (RRAM) has shown to be crucial since this class of devices offers the unique ...
Covi E., Ielmini D., Lin Y. -H., Wang W., Stecconi T., Milo V., Bricalli A., Ambrosi E., Pedretti G., Tseng T. -Y.   +9 more
openaire   +2 more sources

Oxide-based RRAM materials for neuromorphic computing [PDF]

Journal of Materials Science, 2018
In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic ...
Putu Andhita Dananjaya, Funan Tan
exaly   +2 more sources

Stuck-at Fault Tolerance in RRAM Computing Systems [PDF]

IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2018
Emerging metal-oxide resistive switching random-access memory (RRAM) devices and RRAM crossbars have demonstrated their potential in boosting the speed and energy-efficiency of analog matrix-vector multiplication. However, due to the immature fabrication
Yu Wang, Lixue Xia, Yuan Xie
exaly   +2 more sources

A versatile compact model of resistive random-access memory (RRAM) [PDF]

Solid-State Electronics
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM).
Sayeef Salahuddin, Chien-Ting Tung, Chenming Hu   +2 more
exaly   +3 more sources

Memristor-based RRAM with applications

Science China Information Sciences, 2012
Recently acclaimed the fourth fundamental circuit element, the memristor was theoretically predicted by Leon Chua in 1971, although its single device electronic implementation eluded the attention of integrated circuit designers for the past three decades and was first reported in 2008 by the Hewlett-Packard (HP) Laboratory researchers while developing
Shukai Duan 0001, Xiaofang Hu, Lidan Wang 0001, Chuandong Li 0001, Pinaki Mazumder   +4 more
openaire   +1 more source