Results 181 to 190 of about 6,733 (243)

A Reconfigurable Memristor-Based Computing-in-Memory Circuit for Content-Addressable Memory in Sensor Systems. [PDF]

open access: yesSensors (Basel)
Hu H   +12 more
europepmc   +1 more source

Metal–Oxide RRAM

Proceedings of the IEEE, 2012
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Shimeng Yu   +2 more
exaly   +3 more sources

Stuck-At Fault Tolerance in RRAM Computing Systems

open access: yesIEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2018
Emerging metal-oxide resistive switching random-access memory (RRAM) devices and RRAM crossbars have demonstrated their potential in boosting the speed and energy-efficiency of analog matrix-vector multiplication. However, due to the immature fabrication
Yu Wang, Lixue Xia, Yuan Xie
exaly   +2 more sources

Fundamental Variability Limits of Filament-Based RRAM

open access: yes, 2016
While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are ...
Cristian Zambelli   +2 more
exaly   +2 more sources

A Versatile Compact Model of Resistive Random-Access Memory (RRAM) [PDF]

open access: yesSolid-State Electronics
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM).
Sayeef Salahuddin   +2 more
exaly   +2 more sources

Memristor-based RRAM with applications

Science China Information Sciences, 2012
Recently acclaimed the fourth fundamental circuit element, the memristor was theoretically predicted by Leon Chua in 1971, although its single device electronic implementation eluded the attention of integrated circuit designers for the past three decades and was first reported in 2008 by the Hewlett-Packard (HP) Laboratory researchers while developing
Shukai Duan 0001   +4 more
openaire   +2 more sources

Resistance switching for RRAM applications

Science China Information Sciences, 2011
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM).
Frederick T. Chen   +13 more
openaire   +2 more sources

Parasitic engineering for RRAM control

Solid-State Electronics, 2018
The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing the parasitic capacitance using highly integrated 1T-1R or 1R-1R device structures. While this is readily achievable in single
P R, Shrestha   +6 more
openaire   +2 more sources

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