Resistive switching memristors: structures, materials, fabrication techniques, and process challenges for VLSI integration. [PDF]
Singla R, Pant D, Nautiyal P, Painuly A.
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Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices. [PDF]
Chen KH +5 more
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Compute-in-memory implementation of state space models for event sequence processing. [PDF]
Zhang X +6 more
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Area-Selective Atomic Layer Deposition for Next-Generation Semiconductor Processing: Mechanisms of Selectivity Breakdown and Process Integration Strategies. [PDF]
Park Y, Kim S, Shin J, Park E, Pyo SG.
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A Review of Embedded Artificial Intelligence Research (2023-2026): Technological Advancements, Representative Advances, and Future Prospects. [PDF]
Zhang Z.
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Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]
Xiao A +9 more
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Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers. [PDF]
Liu K +9 more
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Accelerating hybrid XOR-CNF Boolean satisfiability problems natively with in-memory computing. [PDF]
Im H +16 more
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Hardware acceleration of simulated annealing for constraint satisfaction problems. [PDF]
Pannone A +10 more
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Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing. [PDF]
Ielmini D, Pedretti G.
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