Results 131 to 140 of about 6,733 (243)

Resistance-dependent switching in NiO-based filamentary RRAM devices

, 2010
Resistive switching memory (RRAM) attracts a growing research interest as potential high-density Flash replacement. Although several transition metal oxides have shown resistance switching capabilities, NiO is considered one of the most promising ...
IELMINI, DANIELE, LACAITA, ANDREA LEONARDO, NARDI, FEDERICO, CAGLI, CARLO   +3 more
core  

SiNx RRAMs performance with different stoichiometries

Solid-State Electronics
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the formation of defects such as nitrogen vacancies, silicon dangling bonds etc., and thus can enable performance tuning of ...
Mavropoulis, A. E., Pissanos, G., Vasileiadis, N., Normand, P., Sirakoulis, G. Ch., Dimitrakis, P.   +5 more
openaire   +2 more sources

Computation-oriented fault-tolerance schemes for RRAM computing systems

, 2017
The emerging metal-oxide resistive switching random-access memory (RRAM) devices and RRAM crossbar arrays have demonstrated their potential in enormously boosting the speed and energy-efficiency of analog matrix-vector multiplication.
Huazhong Yang, Tang, Tianqi, Wang, Yu, Wenqin Huangfu, Lixue Xia, Huangfu, Wenqin, Chakrabarty, Krishnendu, Xie, Yuan, Ming Cheng, Xiling Yin, Krishnendu Chakrabarty, Yin, Xiling, Cheng, Ming, Boxun Li, Xia, Lixue, Yuan Xie, Yang, Huazhong, Yu Wang, Tianqi Tang, Li, Boxun   +19 more
core   +1 more source

RRAM-based parallel computing architecture using k-nearest neighbor classification for pattern recognition

, 2017
Resistive switching memory (RRAM) is considered as one of the most promising devices for parallel computing solutions that may overcome the von Neumann bottleneck of today’s electronic systems.
Yuning Jiang, Xinan Wang, Jinfeng Kang
core   +1 more source

Implementation of offset corrected AGAD algorithm on 130-nm CMOS technology-based RRAM array for analog neural network training. [PDF]

Sci Adv
Lee J, Solomon P, Gong N, Fagbohungbe O, Wilson R, Ando T, Kim S.   +6 more
europepmc   +1 more source

Synthesis of halide perovskite thin films from an eutectic mixture of Pb(NO₃)₂, acetamide, and urea for fabricating resistive random-access memory (RRAM). [PDF]

RSC Adv
Huynh CT, Ha Cao VT, Nguyen TD, Ngo TT, Danh EH, Pham QP, Pham NK, Nguyen PT.   +7 more
europepmc   +1 more source

Hydrogen-Stabilized Self-Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer-Based Keyword Spotting. [PDF]

Adv Sci (Weinh)
Lee S, Ju S, Lee WJ, Kang M, Kim S, Kim Y.   +5 more
europepmc   +1 more source

A Rapid-prototyping CMOS-RRAM Integration Strategy. [PDF]

Microsyst Nanoeng
Tsiamis A, Stathopoulos S, Prodromakis T.   +2 more
europepmc   +1 more source

Ultra-low-power probabilistic graphical computing based on memristors enabling communications signal processing. [PDF]

Nat Commun
Jiang C, Wang J, Pan Z, Liu Y, Hong Y, Tian H, Kuang L, Lu J.   +7 more
europepmc   +1 more source

In Situ Transmission Electron Microscopy Observation of Redox-Structure-Coupled Resistive Switching in High-Entropy Oxide Memristors. [PDF]

ACS Nano
Cheng JD, Tsai JY, Huang CW, Wang CH, Su CM, Chen JY, Chu YH, Wu WW.   +7 more
europepmc   +1 more source