Results 131 to 140 of about 4,703 (195)

Switching Behaviors of HfO2/NiSix Based RRAM

, 2013
This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2.
Z. Fang, Y. H. Wu, Z. X. Chen, X. P. Wang, D. -L. Kwong, G. -Q. Lo   +5 more
core   +1 more source

High-density via RRAM cell with multi-level setting by current compliance circuits

Discover Nano
In this work, multi-level storage in the via RRAM has been first time reported and demonstrated with the standard FinFET CMOS logic process. Multi-level states in via RRAM are achieved by controlling the current compliance during set operations.
Yu-Cheng Hsieh, Yu-Cheng Lin, Yao-Hung Huang, Yu-Der Chih, Jonathan Chang, Chrong-Jung Lin, Ya-Chin King   +6 more
doaj   +1 more source

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

International Journal of Extreme Manufacturing
Embedded memory, which heavily relies on the manufacturing process, has been widely adopted in various industrial applications. As the field of embedded memory continues to evolve, innovative strategies are emerging to enhance performance.
Zijian Wang, Yixian Song, Guobin Zhang, Qi Luo, Kai Xu, Dawei Gao, Bin Yu, Desmond Loke, Shuai Zhong, Yishu Zhang   +9 more
doaj   +1 more source

System Level Exploration of RRAM for SRAM Replacement

, 2013
Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) designs. Nowadays on-chip memories take up more than 50%of the total die-area and are responsible for more than 40% of the total energy consumption.
Dogan, Rabia
core  

Integration von Multi-Level 1T1R RRAM Zellen als eingebetteter Speicher

This thesis proposes a structural approach for integration of one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) cells as embedded memory in integrated circuits.
Pechmann, Stefan Peter
core  

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Metal–Oxide RRAM

Proceedings of the IEEE, 2012
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Shimeng Yu, H -S Philip Wong
exaly   +3 more sources

Oxide-based RRAM materials for neuromorphic computing

Journal of Materials Science, 2018
In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic ...
Putu Andhita Dananjaya, Funan Tan
exaly   +2 more sources

A versatile compact model of resistive random-access memory (RRAM) [PDF]

Solid-State Electronics
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM).
Sayeef Salahuddin, Chien-Ting Tung, Chenming Hu   +2 more
exaly   +2 more sources

Memristor-based RRAM with applications

Science China Information Sciences, 2012
Recently acclaimed the fourth fundamental circuit element, the memristor was theoretically predicted by Leon Chua in 1971, although its single device electronic implementation eluded the attention of integrated circuit designers for the past three decades and was first reported in 2008 by the Hewlett-Packard (HP) Laboratory researchers while developing
Shukai Duan 0001, Xiaofang Hu, Lidan Wang 0001, Chuandong Li 0001, Pinaki Mazumder   +4 more
openaire   +2 more sources

Resistance switching for RRAM applications

Science China Information Sciences, 2011
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM).
Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Yenya Hsu, Lijie Zhang, Pang-Shiu Chen, Weisu Chen, Peiyi Gu, Wenhsing Liu, Sumin Wang, Chen-Han Tsai, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Ru Huang 0001   +13 more
openaire   +2 more sources