Results 101 to 110 of about 6,733 (243)

Investigation on the Impact of Memristive Device Variability on Uncoupled Memristive Cellular Nonlinear Networks

Advanced Electronic Materials, EarlyView.
Memristors, nanoscale devices that compute and store data in the same place, promise compact, energy‐efficient image‐processing hardware, yet no two devices behave exactly alike. Simulations based on real device measurements show that a 256‐cell memristive cellular nonlinear network (M‐CellNN) detects image edges perfectly despite this variability and ...
Salwa Yasmeen Neyaz, Kristoffer Schnieders, Yongmin Wang, Alon Ascoli, Ioannis Messaris, Ronald Tetzlaff, Vasileios Ntinas, Ricardo Carmona Galán, Stefan Wiefels, Vikas Rana, Stephan Menzel   +10 more
wiley   +1 more source

How significant is SET programming strategy in enhancing RRAM technology?

International audienceThis paper benchmarks a range of programming strategies for resistive random-access memory (RRAM), employing both voltage-and current-mode methods in single pulse, and progressive verify formats.
Pillonnet, Gaël, Molas, Gabriel, Bauvent, Thomas   +2 more
core   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Experimental demonstration of RRAM-based computational cells for reconfigurable mixed-signal neuro-inspired circuits and systems

, 2021
Modern electronics drive a shift from distributed, cloud and/or mainframe computing towards the ‘edge’. To realise this vision, we need access to hardware technologies that are both energy and scale efficient.
Papandroulidakis, Georgios
core   +1 more source

Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO₂/Ti RRAM Device via Post Annealing Process

Inorganics
As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important.
Yuseong Jang, Chanmin Hwang, Sanggyu Bang, Hee-Dong Kim   +3 more
doaj   +1 more source

Design and Test of the In-Array Build-In Self-Test Scheme for the Embedded RRAM Array

IEEE Journal of the Electron Devices Society, 2019
An in-array build-in self-test (BIST) scheme is proposed for the embedded resistive random access memory (RRAM) array. The BIST circuit consists of the linear-feedback-shift-register (LFSR)- based pattern generator and the multi-input signature register (
Xiaole Cui, Miaomiao Zhang, Qiujun Lin, Xiaoxin Cui, Anqi Pang   +4 more
doaj   +1 more source

Switching Behaviors of HfO2/NiSix Based RRAM

, 2013
This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2.
Z. Fang, Y. H. Wu, Z. X. Chen, X. P. Wang, D. -L. Kwong, G. -Q. Lo   +5 more
core   +1 more source

Vertical NAND Flash Memory‐Based Bayesian Neural Networks With Intrinsic Gaussian Weight Sampling

Advanced Intelligent Systems, EarlyView.
Commercial vertical NAND flash memory supports Bayesian neural networks by using paired cells to produce bell‐shaped weight distributions. Read voltage controls their spread without additional memory cells or changes to the array structure. Simulations based on device measurements demonstrate improved uncertainty estimation and accuracy gains of up to ...
Sung‐Ho Park, Mingyun Oh, Dongbeen Shin, Jaehyeon Kim, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Entropy source characterization in HfO2 RRAM for TRNG applications

, 2020
International audienceIn this work we perform an in-depth characterization of the entropy source available in Resistive RAM (RRAM) memory cells during the bit SET operation. We detail the motivation in using RRAM as an entropy source for TRNG.
Florian Pebay-Peyroula, Vianello, Elisa, Elisa Vianello, Thomas Dalgaty, Pebay-Peyroula, Florian, Dalgaty, Thomas   +5 more
core   +1 more source

Dual‐Timescale 3D Synaptic Pillars: Monolithic Integration of Volatile and Nonvolatile Functions for Advanced Neuromorphic Computing

Advanced Intelligent Systems, EarlyView.
A 3D vertically integrated synaptic pillar with an n–p–n–p–n channel is proposed within a compact footprint for neuromorphic computing. By combining volatile 1T‐DRAM and non‐volatile SONOS tiers, the system mitigates refresh power overhead. Optimized by an adaptive dynamic pulse scheme, the device achieves high linearity and 87% MNIST classification ...
Eungi Hwang, Ilho Myeong, Sangwan Kim, Garam Kim   +3 more
wiley   +1 more source