Results 41 to 50 of about 6,733 (243)

Client perceptions of the BreastScreen Australia remote radiology assessment model

open access: yesBMC Women's Health, 2021
Background Telehealth and teleradiology are increasingly used around the world to facilitate health care provision when the health care provider and clients are separated by distance. The BreastScreen Australia Remote Radiology Assessment Model (RRAM) is
Deborah Smith   +9 more
doaj   +1 more source

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

open access: yesIEEE Access, 2021
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku   +4 more
doaj   +1 more source

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

open access: yesNanoscale Research Letters, 2021
As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability.
Yun-Feng Kao   +3 more
doaj   +1 more source

Multimodal Optoelectronic Synapses for Neuromorphic Intelligence: Coupling Light, Electrical, Thermal, and Beyond

open access: yesAdvanced Functional Materials, EarlyView.
This review revisits optoelectronic neuromorphic devices that extend from unimodal sensing toward multimodal perception. Five types of stimuli‐to‐output information flow that are classified based on the device roles within the system and applications are summarized and discussed.
Jihyun Shin   +6 more
wiley   +1 more source

Implementation of Discrete Fourier Transform using RRAM Arrays with Quasi-Analog Mapping for High-Fidelity Medical Image Reconstruction

open access: yes, 2021
In this paper, we report the first experimental implementation of discrete Fourier transform (DFT) on analog resistive switching random-Access memory (RRAM) arrays with computing-in-memory (CIM). Considering the features of transform matrix, we developed
Qian, He   +17 more
core   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing [PDF]

open access: yes, 2018
Volatile resistive switching memory (RRAM) is raising strong interest as potential selector device in crosspoint memory and short-term synapse in neuromorphic computing.
Bricalli A.   +11 more
core   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

open access: yesAdvanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang   +7 more
wiley   +1 more source

Mott-transition-based RRAM

open access: yes, 2019
Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks.
Dittmann, Regina   +19 more
core   +1 more source

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

open access: yesMaterials Research Express, 2022
We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park   +4 more
doaj   +1 more source

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