Results 41 to 50 of about 4,703 (195)

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

3D RRAM: Design and optimization

, 2014
A novel vertical RRAM for 3D cross-point architecture is proposed. The design and optimization issues of the proposed vertical RRAM for 3D cross-point architecture array are addressed from both device and array levels.
Kang, Jinfeng, L.F. Liu, Huang, P., Wong, H.-S. Philip, Y.X. Deng, Z. Jiang, Gao, Bin, Yu, S.M., F.F. Zhang, P. Huang, Jinfeng Kang, Liu, X.Y., Chen, H.-Y., H-Y. Chen, Zhang, F.F., Liu, L.F., S.M. Yu, Jiang, Z., Bin Gao, Chen, B., H.-S. Philip Wong, X.Y. Liu, Deng, Y.X., B. Chen   +23 more
core   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Nanoscale Research Letters, 2018
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the ...
Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King   +3 more
doaj   +1 more source

An RRAM retention prediction framework using a convolutional neural network based on relaxation behavior

Neuromorphic Computing and Engineering, 2023
The long-time retention issue of resistive random access memory (RRAM) brings a great challenge in the performance maintenance of large-scale RRAM-based computation-in-memory (CIM) systems.
Yibei Zhang, Qingtian Zhang, Qi Qin, Wenbin Zhang, Yue Xi, Zhixing Jiang, Jianshi Tang, Bin Gao, He Qian, Huaqiang Wu   +9 more
doaj   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Fundamental variability limits of filament-based RRAM

, 2016
While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are ...
C. Zambelli, C. Pellissier, P. Olivo, Perniola, L., E. Nowak, J.F. Nodin, L. Perniola, GROSSI, Alessandro, Nodin, J. F., R. Crochemore, Bernasconi, S., K. El Hajjam, Cibrario, G., S. Bernasconi, Pellissier, C., Crochemore, R., A. Grossi, ZAMBELLI, Cristian, OLIVO, Piero, G. Cibrario, Nowak, E., Hajjam, K. El   +21 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

Nanomaterials, 2023
In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron ...
Kai-Huang Chen, Chien-Min Cheng, Mei-Li Chen, Yi-Yun Pan   +3 more
doaj   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source