Results 41 to 50 of about 5,275 (241)

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer

Nanomaterials, 2022
The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics.
Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin, Yeong-Her Wang   +4 more
doaj   +1 more source

3D RRAM: Design and optimization

, 2014
A novel vertical RRAM for 3D cross-point architecture is proposed. The design and optimization issues of the proposed vertical RRAM for 3D cross-point architecture array are addressed from both device and array levels.
Kang, Jinfeng, L.F. Liu, Huang, P., Wong, H.-S. Philip, Y.X. Deng, Z. Jiang, Gao, Bin, Yu, S.M., F.F. Zhang, P. Huang, Jinfeng Kang, Liu, X.Y., Chen, H.-Y., H-Y. Chen, Zhang, F.F., Liu, L.F., S.M. Yu, Jiang, Z., Bin Gao, Chen, B., H.-S. Philip Wong, X.Y. Liu, Deng, Y.X., B. Chen   +23 more
core   +1 more source

RRAM based neuromorphic algorithms

CoRR, 2019
This submission is a report on RRAM based neuromorphic algorithms. This report basically gives an overview of the algorithms implemented on neuromorphic hardware with crossbar array of RRAM synapses. This report mainly talks about the work on deep neural network to spiking neural network conversion and its significance.
openaire   +2 more sources

Fundamental variability limits of filament-based RRAM

, 2016
While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are ...
C. Zambelli, C. Pellissier, P. Olivo, Perniola, L., E. Nowak, J.F. Nodin, L. Perniola, GROSSI, Alessandro, Nodin, J. F., R. Crochemore, Bernasconi, S., K. El Hajjam, Cibrario, G., S. Bernasconi, Pellissier, C., Crochemore, R., A. Grossi, ZAMBELLI, Cristian, OLIVO, Piero, G. Cibrario, Nowak, E., Hajjam, K. El   +21 more
core   +1 more source

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Nanoscale Research Letters, 2018
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the ...
Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King   +3 more
doaj   +1 more source

Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

Nanomaterials, 2023
In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron ...
Kai-Huang Chen, Chien-Min Cheng, Mei-Li Chen, Yi-Yun Pan   +3 more
doaj   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

Simulations of RRAM-Based SSDs

, 2017
In this chapter SSDExplorer, a fine-grained SSD simulator, is used to evaluate the possible impact of emerging non-volatile memories, such as Resistive RAM (RRAM), on future SSD architectures. Does it make sense to fully replace NANDs with one of the emerging memories? What’s the benefit?
Zuolo, Lorenzo, ZAMBELLI, Cristian, Micheloni, Rino, OLIVO, Piero   +3 more
openaire   +2 more sources