Results 11 to 20 of about 5,275 (241)
Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
APL Materials, 2022 This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim +5 more
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Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model [PDF]
, 2023 In-memory computing hardware accelerators for binarized neural networks based on resistive RAM (RRAM) memory technologies represent a promising solution for enabling the execution of deep neural network algorithms on resource-constrained devices at the ...
Zanotti, Tommaso +3 more
core +1 more source
Journal of Asian Ceramic Societies, 2020 Amorphous LaGdO3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated.
Chia-Shan Chien +2 more
doaj +1 more source
Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes
Micromachines, 2021 Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications.
Donglin Zhang +12 more
doaj +1 more source
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 Analog compute-in-memory with resistive random access memory (RRAM) devices promises to overcome the data movement bottleneck in data-intensive artificial intelligence (AI) and machine learning.
Justin M. Correll +8 more
doaj +1 more source
A novel read circuit for RRAM based on RC delay effect
Electronics Letters, 2023 In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye +7 more
doaj +1 more source
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF
Transactions on Cryptographic Hardware and Embedded Systems, 2018 The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions.
Kai-Hsin Chuang +5 more
doaj +1 more source
RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
Nanoscale Research Letters, 2019 In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen +2 more
doaj +1 more source
RRAM variability and its mitigation schemes [PDF]
2016 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS), 2016 Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained ...
Pouman, Peyman +3 more
openaire +3 more sources
IEEE Access, 2021 Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku +4 more
doaj +1 more source