Results 11 to 20 of about 6,733 (243)

A Fully Integrated Reprogrammable CMOS-RRAM Compute-in-Memory Coprocessor for Neuromorphic Applications

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Analog compute-in-memory with resistive random access memory (RRAM) devices promises to overcome the data movement bottleneck in data-intensive artificial intelligence (AI) and machine learning.
Justin M. Correll, Vishishtha Bothra, Fuxi Cai, Yong Lim, Seung Hwan Lee, Seungjong Lee, Wei D. Lu, Zhengya Zhang, Michael P. Flynn   +8 more
doaj   +2 more sources

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature [PDF]

Advanced Electronic Materials, 2023
The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan, Zhixiong Li, Zhenjie Chen, Quanzhou Zhu, Wenhui Wang, Muhammad Zaheer, Jiqing Lu, Jinxuan Liang, Mei Shen, Peng Chen, Kai Chen, Guobiao Zhang, Zhongrui Wang, Feichi Zhou, Longyang Lin, Yida Li   +15 more
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Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices [PDF]

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
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RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Nanoscale Research Letters, 2019
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King   +2 more
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The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO2-Based RRAM and Applications for Pattern Recognition

Nanoscale Research Letters, 2017
A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array.
Zheng Zhou, Chen Liu, Wensheng Shen, Zhen Dong, Zhe Chen, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +8 more
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Current pulse generator: A circuit for programming RRAM in current mode [PDF]

APL Materials
Switching uniformity, as a major challenge, hinders the practical implementation of resistive random access memory (RRAM) in memory application. Operating RRAM in current mode is proposed as an efficient method to improve programming schemes accuracy ...
B. Zhang, P. Gibertini, M. Akbari, E. Covi   +3 more
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Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

APL Materials, 2022
This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim, Yue Wang, Dong-eun Kim, Qingyi Shao, Hong-Sub Lee, Hyung-Ho Park   +5 more
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Dynamically Configurable Physical Unclonable Function based on RRAM Crossbar [PDF]

, 2021
Physical unclonable function (PUF) has been an effective solution for hardware security with the popularity of the internet of things (IoT). Due to low power consumption and high area efficiency, an emerging nonvolatile memory, resistive random access ...
Gu, Chongyan; id_orcid, Liu, Weiqiang, Yijun Cui, Chenghua Wang, Li, Jiang, Cui, Yijun, Wang, Chenghua, Chongyan Gu, Weiqiang Liu, Jiang Li   +9 more
core   +1 more source

A novel read circuit for RRAM based on RC delay effect

Electronics Letters, 2023
In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye, Xuecheng Cui, Haoxiong Bi, Jifang Cao, Wannian Wang, Xiaoxin Xu, Dong Liu, Bing Chen   +7 more
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Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Micromachines, 2021
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications.
Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv   +12 more
doaj   +1 more source