Results 31 to 40 of about 15,800,199 (248)

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source

Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing

, 2019
Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel ...
Wang, Dawei, Xie, Hao, Gao, Pingqi, Zhao, Zhenguo, Yin, Wen-Yan, Zhu, Guodong, Chen, Wenchao, Schutt-Aine, Jose   +7 more
core   +1 more source

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

IEEE Journal of the Electron Devices Society, 2016
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang, Peng Huang, Bin Gao, Haitong Li, Zhe Chen, Yudi Zhao, Chen Liu, Lifeng Liu, Xiaoyan Liu   +8 more
doaj   +1 more source

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

Materials Research Express, 2020
Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail, Sobia Ali Khan, Mehr Khalid Rahmani, Junhyeok Choi, Zahida Batool, Anwar Manzoor Rana, Sungjun Kim   +6 more
doaj   +1 more source

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

npj Computational Materials, 2020
Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer.
Kena Zhang, Jianjun Wang, Yuhui Huang, Long-Qing Chen, P. Ganesh, Ye Cao   +5 more
doaj   +1 more source

A Finite Element Model for Bipolar Resistive Random Access Memory

, 2014
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects.
Choi, Woo Young, Park, Young-Kwan, Lee, Kwangseok, Lee, Keun-Ho, Kim, Kwanyong   +4 more
core   +1 more source

Comparing the paths of Hedgehog release in artificial and natural settings

FEBS Letters, EarlyView.
Hh morphogens require solubilization factors to overcome their tight association with the plasma membrane and signal to distant cells, but the precise functions of these factors are controversial. Here, we use published in vivo observations as the most relevant evidence to test their suggested functions and discuss contradictions and gaps between in ...
Janna Puschmann, Kay Grobe
wiley   +1 more source

A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

, 2017
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation ...
Zhang, Haizhong, Haizhong Zhang, null null   +2 more
core   +1 more source

Gradual reset and set characteristics in yttrium oxide based resistive random access memory [PDF]

, 2021
This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack.
Zintler, Alexander, Alff, Lambert, Hildebrandt, Erwin, Piros, Eszter, Sharath, Sankaramangalam Ulhas, Petzold, Stefan, Wenger, Christian, Molina-Luna, Leopoldo   +7 more
core   +1 more source

Stimulator of interferon genes agonist augmented antitumor immunity of osimertinib in Egfr‐mutated lung cancer

Molecular Oncology, EarlyView.
Combining osimertinib with the STING agonist ADU‐S100 activates innate and adaptive immunity to overcome the non‐inflamed microenvironment of Egfr‐mutant lung cancer. This combination increases NK and CD8+ T‐cell infiltration, associated with activation of the STING‐IRF3 pathway and local immunogenic cell death.
Jun Nishimura, Tadahiro Kuribayashi, Johannes Brägelmann, Sachi Okawa, Masataka Taoka, Shunta Mori, Tomoka Nishimura, Takaaki Tanaka, Go Makimoto, Kiichiro Ninomiya, Kammei Rai, Eiki Ichihara, Ryohei Katayama, Katsuyuki Hotta, Masahiro Tabata, Yosuke Togashi, Yoshinobu Maeda, Martin L. Sos, Katsuyuki Kiura, Kadoaki Ohashi   +19 more
wiley   +1 more source