Results 31 to 40 of about 14,908,555 (316)

A computing-in-memory macro based on three-dimensional resistive random-access memory

Nature Electronics, 2022
Non-volatile computing-in-memory macros that are based on two-dimensional arrays of memristors are of use in the development of artificial intelligence edge devices.
Qiang Huo, Yiming Yang, Yiming Wang, Dengyun Lei, Xiang-Qu Fu, Qirui Ren, Xiaoxin Xu, Qing Luo, Guozhong Xing, Chengying Chen, Xin Si, Hao Wu, Yiyang Yuan, Qiang Li, Xiaoran Li, Xinghua Wang, Meng-Fan Chang, Feng Zhang, Meilin Liu   +18 more
semanticscholar   +1 more source

A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

APL Materials, 2023
With the arrival of the era of big data, the conventional von Neumann architecture is now insufficient owing to its high latency and energy consumption that originate from its separated computing and memory units.
J. H. Yoon, Young-Woong Song, Wooho Ham, J. Park, Jang-Yeon Kwon   +4 more
semanticscholar   +1 more source

Spinel ferrites for resistive random access memory applications

Emergent Materials, 2023
Cutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries.
Ketankumar Gayakvad, Kaushik Somdatta, Vikas Mathe, Tukaram D. Dongale, M. W., Ketaki Patankar   +5 more
semanticscholar   +1 more source

ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)

Crystals, 2023
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented.
E. Nowak, E. Chłopocka, M. Szybowicz
semanticscholar   +1 more source

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

Advanced Materials Interfaces, 2023
To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho   +8 more
doaj   +1 more source

4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array

Advanced Intelligent Systems, 2022
To apply resistive random‐access memory (RRAM) to the neuromorphic system and improve performance, each cell in the array should be able to operate independently by reducing device variation. In addition, it is necessary to lower the operating current of
Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim   +6 more
semanticscholar   +1 more source

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Nanomaterials, 2021
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim   +6 more
doaj   +1 more source

Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning

Journal of Science: Advanced Materials and Devices, 2023
Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing.
Shubham V. Patil, Navaj B. Mullani, Kiran Nirmal, Gihwan Hyun, Batyrbek Alimkhanuly, Rajanish K. Kamat, Jun Hong Park, Sanghoek Kim, Tukaram D. Dongale, Seunghyun Lee   +9 more
doaj   +1 more source

Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

Electronics, 2021
The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems.
Furqan Zahoor, F. A. Hussin, F. A. Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi, C. Ooi, F. Rokhani   +6 more
semanticscholar   +1 more source

Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]

, 2015
Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z., Leon O. Chua, Wang, Frank, Helian, Na, Na Helian, Chua, Leon O., Frank Zhigang Wang   +6 more
core   +1 more source