Results 51 to 60 of about 15,800,199 (248)
Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory
Micromachines, 2020 In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao +5 more
doaj +1 more source
Aging and Cancer, EarlyView.Cancer treatment is associated with measurable acceleration of biological aging across epigenetic, telomere, senescence, and immune biomarkers. However, biomarker validation and interventional strategies remain limited, especially in hematologic malignancies, underscoring the need for standardized multi‐omic aging assessments and adequately powered ...
Moataz Ellithi +3 more
wiley +1 more source
, 2011 We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process.
Ryoo, Kyung-Chang +9 more
core +1 more source
Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
Materials Research Express, 2021 In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj +1 more source
Annals of Clinical and Translational Neurology, EarlyView.ABSTRACT Objective Treatment of disorders of consciousness (DoC) remains a major clinical challenge, and noninvasive, targeted modulation of deep brain structures has emerged as a promising therapeutic strategy. We aimed to evaluate the feasibility/safety and preliminary effects of thalamic temporal interference stimulation (TIS) targeting centromedian‐
Gengyao Hu +7 more
wiley +1 more source
AIP Advances, 2020 Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance.
Gang Cao +5 more
doaj +1 more source
Intracerebral Hemorrhage Induces Monocyte TNF Signaling in Patients That Is Suppressed by BAF312
Annals of Clinical and Translational Neurology, EarlyView.ABSTRACT Objective Intracerebral hemorrhage (ICH) causes high morbidity and mortality, with neurotoxic inflammation driven by infiltrating monocytes. This study is an in‐depth longitudinal examination of the immune response during the first week of ICH in the presence and absence of the immunomodulatory drug BAF312 (Siponimod).
Jonathan Howard DeLong +10 more
wiley +1 more source
Memristor-Based Resistive Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design [PDF]
, 2014 The computer memory system has both volatile and non volatile memory. The Volatile memories such as SRAM and DRAM used as a main memory and non volatile memory like flash memory.
V, Thangamani.
core
A comprehensive investigation of MoO3 based resistive random access memory
, 2020 The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.
Fatheema, Jameela +6 more
core +1 more source
Nature Communications, 2022 Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access
Jinhong Park +10 more
doaj +1 more source