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Variability in Resistive Memories [PDF]

Advanced Intelligent Systems, 2023
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc.
Juan B. Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia B. González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua   +19 more
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Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories [PDF]

Micromachines, 2023
A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the ...
Cristina Aguilera-Pedregosa, David Maldonado, Mireia B. González, Enrique Moreno, Francisco Jiménez-Molinos, Francesca Campabadal, Juan B. Roldán   +6 more
doaj   +4 more sources

Neuromorphic object localization using resistive memories and ultrasonic transducers [PDF]

Nature Communications, 2022
The real-world object localization application needs a low-latency and power efficient computing system. Here, Moro et al. demonstrate a neuromorphic in-memory event driven system, inspired by the barn owl’s neuroanatomy, which is orders of magnitude ...
Filippo Moro, Emmanuel Hardy, Bruno Fain, Thomas Dalgaty, Paul Clémençon, Alessio De Prà, Eduardo Esmanhotto, Niccolò Castellani, François Blard, François Gardien, Thomas Mesquida, François Rummens, David Esseni, Jérôme Casas, Giacomo Indiveri, Melika Payvand, Elisa Vianello   +16 more
doaj   +2 more sources

Interface-Dependent Transport and Resistive Switching in TiO₂ and TiO₂:Co Nanotubes for Resistive Memories [PDF]

Nanomaterials
In this work, TiO2 and TiO2:Co nanotubes were fabricated via electrochemical anodization, using Ti (99.99% purity) and Ti/Co foils as the anode and cathode.
Y. Porras Ramírez, D. Laverde Lizarazo, Heiddy P. Quiroz, Jorge A. Calderón, A. Dussan   +4 more
doaj   +2 more sources

A generic compact model for resistive memories and switches [PDF]

Scientific Reports
Most previous studies have modeled resistive switching based on physical principles. While physics-driven models provide valuable physical insight, their complexity and device specificity limit scalability and often result in high computational costs in ...
Sangwoo Jung, Hyoseob Kim, Jiseon Park, Sungjun Kim, Min-Hwi Kim   +4 more
doaj   +2 more sources

2D (NH4)BiI3 enables non-volatile optoelectronic memories for machine learning [PDF]

Nature Communications
Machine learning is the core of artificial intelligence. Using optical signals for training and converting them into electrical signals for inference, combines the strengths of both, and thus can greatly improve machine learning efficiency ...
Bo Tong, Jiajun Xu, Jinhong Du, Peitao Liu, Tianming Du, Qiang Wang, Langjun Li, Yuning Wei, Jiangxu Li, Jinhua Liang, Chi Liu, Zhibo Liu, Chen Li, Lai-Peng Ma, Yang Chai, Wencai Ren   +15 more
doaj   +2 more sources

Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]

PLoS ONE, 2016
Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo, Marcelo Andrade Macêdo   +1 more
doaj   +1 more source

Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy

Advanced Intelligent Systems, 2022
Crossbars of resistive memories, or memristors, provide a road to reduce the energy consumption of artificial neural networks, by naturally implementing multiply accumulate operations, their most basic calculations.
Eduardo Esmanhotto, Tifenn Hirtzlin, Djohan Bonnet, Niccolo Castellani, Jean-Michel Portal, Damien Querlioz, Elisa Vianello   +6 more
doaj   +1 more source

Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes

Mathematics, 2021
An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on ...
María José Ibáñez, Domingo Barrera, David Maldonado, Rafael Yáñez, Juan Bautista Roldán   +4 more
doaj   +1 more source

Exploiting Non-idealities of Resistive Switching Memories for Efficient Machine Learning

Frontiers in Electronics, 2022
Novel computing architectures based on resistive switching memories (also known as memristors or RRAMs) have been shown to be promising approaches for tackling the energy inefficiency of deep learning and spiking neural networks.
Victor Yon, Victor Yon, Amirali Amirsoleimani, Fabien Alibart, Fabien Alibart, Roger G. Melko, Roger G. Melko, Dominique Drouin, Dominique Drouin, Yann Beilliard, Yann Beilliard   +10 more
doaj   +1 more source