Results 41 to 50 of about 351,109 (298)

Ex Situ Transfer of Bayesian Neural Networks to Resistive Memory‐Based Inference Hardware

open access: yesAdvanced Intelligent Systems, 2021
Neural networks cannot typically be trained locally in edge‐computing systems due to severe energy constraints. It has, therefore, become commonplace to train them “ex situ” and transfer the resulting model to a dedicated inference hardware.
Thomas Dalgaty   +4 more
doaj   +1 more source

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]

open access: yes, 2008
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo   +7 more
core   +1 more source

Engineering peptides into antibodies—opportunities and strategies for therapeutic innovation

open access: yesFEBS Letters, EarlyView.
Peptides and antibodies occupy complementary therapeutic niches. Peptides recognize difficult targets in a compact format, while antibodies add specificity, long half‐life, and effector functions. This review examines strategies that merge both modalities—peptide grafting into loops, terminal and Fc fusions, and bioconjugation—highlighting how ...
Jinling Wang   +2 more
wiley   +1 more source

Characterization and modeling of resistive memories based on mis and mim structures [PDF]

open access: yes, 2022
The efforts in this doctoral thesis have been focused on the characterization and modeling of memristive devices fabricated using different technologies.
Maldonado Correa, David
core   +1 more source

A physically based model for resistive memories including a detailed temperature and variability description [PDF]

open access: yes, 2017
Producción CientíficaA new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical mechanisms involved in the conductive filament formation and disruption ...
González-Cordero, G.   +15 more
core   +1 more source

The heterodimeric amino acid transporters (HAT) of the SLC7/SLC3 family: A structure−function relationships and relevance to human pathology

open access: yesFEBS Letters, EarlyView.
Heterodimeric amino acid transporters consist of SLC7 and SLC3 family proteins arranged in a conserved structural organization. They regulate nutrient transport across cell membranes, supporting essential cellular functions. These transporters also contribute to xenobiotic/drug uptake and distribution.
Mariafrancesca Scalise   +5 more
wiley   +1 more source

When Memristance Crosses the Path with Humidity Sensing—About the Importance of Protons and Its Opportunities in Valence Change Memristors

open access: yesAdvanced Electronic Materials, 2018
Resistive switching devices based on oxides have outstanding properties, making them a promising candidate to replace today's transistor‐based computer memories as non‐volatile valence change memories, and can even find future application in neuromorphic
Felix Messerschmitt   +2 more
doaj   +1 more source

Comparing the paths of Hedgehog release in artificial and natural settings

open access: yesFEBS Letters, EarlyView.
Hh morphogens require solubilization factors to overcome their tight association with the plasma membrane and signal to distant cells, but the precise functions of these factors are controversial. Here, we use published in vivo observations as the most relevant evidence to test their suggested functions and discuss contradictions and gaps between in ...
Janna Puschmann, Kay Grobe
wiley   +1 more source

Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties

open access: yesAdvanced Electronic Materials, 2023
Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain ...
Hongyi Dou   +8 more
doaj   +1 more source

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

open access: yesNanomaterials, 2021
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware ...
Juan B. Roldán   +13 more
doaj   +1 more source

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