Results 21 to 30 of about 351,109 (298)
Non-stoichiometric WO3−x-based nanoscale memristor for high-density memory
AIP Advances, 2023 This work demonstrates forming-free and self-limiting resistive switching characteristics of non-stoichiometric WO3−x-based nanoscale devices without using any selector layer. Pt/W/WO3−x/Pt cross point and crossbar devices with individual cell dimensions
Krishna Rudrapal +5 more
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Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories
Frontiers in Physics, 2021 Two-dimensional electron gases (2DEGs) can be formed at some oxide interfaces, providing a fertile ground for creating extraordinary physical properties.
Yang Li, Shahar Kvatinsky, Lior Kornblum
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Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
AIP Advances, 2018 Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories ...
J. Fan +5 more
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Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
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Scientific Reports, 2017 Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom +7 more
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Безопасность информационных технологий, 2022 The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov +4 more
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In-Memory Computing with Resistive Memory Circuits: Status and Outlook [PDF]
Electronics, 2021 In-memory computing (IMC) refers to non-von Neumann architectures where data are processed in situ within the memory by taking advantage of physical laws. Among the memory devices that have been considered for IMC, the resistive switching memory (RRAM), also known as memristor, is one of the most promising technologies due to its relatively easy ...
Pedretti G., Ielmini D.
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High-accuracy inference using HfOxSy/HfS2 memristors [PDF]
APL Electronic DevicesWe demonstrate high-accuracy classification for handwritten digits from the MNIST dataset (∼98.00%) and RGB images from the CIFAR-10 dataset (∼86.80%) by using resistive memories based on a 2D van der Waals semiconductor: hafnium disulfide (HfS2).
Antonio Lombardo, Aferdita Xhameni
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High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications
Nanomaterials, 2021 One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar +5 more
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Tetrahedral amorphous carbon resistive memories with graphene-based electrodes [PDF]
, 2022 Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching.
core +2 more sources