Results 11 to 20 of about 351,109 (298)

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Journal of Low Power Electronics and Applications, 2014
Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low
Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, Jean-Michel Portal   +9 more
doaj   +2 more sources

Locally rewritable codes for resistive memories [PDF]

2016 IEEE International Conference on Communications (ICC), 2016
We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost data in the failed node can be recovered by accessing only a small fraction of other nodes.
Yongjune Kim 0001, Abhishek A. Sharma, Robert Mateescu, Seung-Hwan Song, Zvonimir Z. Bandic, James A. Bain, B. V. K. Vijaya Kumar   +6 more
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Effects of Sm₂O₃ and V₂O₅ Film Stacking on Switching Behaviors of Resistive Random Access Memories

Crystals, 2019
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen   +2 more
doaj   +2 more sources

Oxides based resistive switching memories

, 2021
This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher ...
Kalem, Seref, Wenger, Christian, Tekin, Serdar B., Kaya, Zahit E., Yildirim, Saffet, Roelofs, Robin, Yavuzcetin, Ozgur, Jalaguier, Eric   +7 more
core   +5 more sources

Phase-type distributions for studying variability in resistive memories [PDF]

, 2019
A new statistical approach has been developed to analyze Resistive Random Access Memory (RRAM) variability. The stochastic nature of the physical processes behind the operation of resistive memories makes variability one of the key issues to solve from ...
Ruiz-Castro, Juan E., Jiménez-Molinos, Francisco, Acal, Christian, Aguilera, Ana M., Roldán, Juan B.   +4 more
core   +3 more sources

Advancement in Soft Iontronic Resistive Memory Devices and Their Application for Neuromorphic Computing

Advanced Intelligent Systems, 2023
The aqueous electrolyte can be a deformable and stretchable liquid material for iontronic resistive memory devices. An aqueous medium makes a device closer to the brain‐like system with the movement of ions.
Muhammad Umair Khan, Jungmin Kim, Mahesh Y. Chougale, Rayyan Ali Shaukat, Qazi Muhammad Saqib, Swapnil R. Patil, Baker Mohammad, Jinho Bae   +7 more
doaj   +1 more source

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Sensors, 2021
This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs).
Hyeong-Un Jeon, Won-Ju Cho
doaj   +1 more source

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN_x:H Resistive Switching Memory by the Transient Current

Nanomaterials, 2022
With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu   +7 more
doaj   +1 more source

Nonvolatile ferroelectric domain wall memory integrated on silicon

Nature Communications, 2022
Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
Haoying Sun, Jierong Wang, Yushu Wang, Changqing Guo, Jiahui Gu, Wei Mao, Jiangfeng Yang, Yuwei Liu, Tingting Zhang, Tianyi Gao, Hanyu Fu, Tingjun Zhang, Yufeng Hao, Zhengbin Gu, Peng Wang, Houbing Huang, Yuefeng Nie   +16 more
doaj   +1 more source

Carbon-based resistive memories [PDF]

, 2016
Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C).
Bachmann, T, W. W. Koelmans, Sebastian, A, F. Zipoli, S. Zhang, V. K. Nagareddy, Sebastian, A., V. P. Jonnalagadda, A. C. Ferrari, Koelmans, WW, A. K. Ott, A. Curioni, C. D. Wright, Wright, CD, Cojocaru-Miredin, Oana-Eugenia, Alexeev, AM, Curioni, A., ,, Koelmans, W. W., Craciun, M. F., T. Bachmann, C. Dou, Bachmann, T., Nagareddy, V. K., C. Scheu, Dou, C, Jonnalagadda, V. P., Zhang, S., Zipoli, F., Scheu, C., Ferrari, AC, Alexeev, A. M., Zipoli, F, Ott, A. K., Ferrari, A. C., Ott, AK, Eleftheriou, E, Wuttig, M, Jonnalagadda, VP, Scheu, C, E. Eleftheriou, Wright, C. D., Zhang, S, O. Cojocaru-Miredin, A. Sebastian, Eleftheriou, E., Cojocaru-Miredin, O, Curioni, A, M. Wuttig, Wuttig, Matthias, Nagareddy, VK, Craciun, MF, M. F. Craciun, A. M. Alexeev, Dou, C.   +54 more
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