Results 41 to 50 of about 14,908,555 (316)

Bio-Organic based Resistive Switching Random-Access Memory

, 2023
A non-volatile memory is a solid-state device that can retain data even when power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things.
Cheong, Kuan Yew, Zhao, Feng, Awais, Muhammad   +2 more
core   +1 more source

Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]

, 2008
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo, Scionti, A., Alessandro Savino, Alberto Scionti, Paolo Prinetto, Prinetto, Paolo Ernesto, Di Carlo, Stefano, Savino, Alessandro   +7 more
core   +1 more source

Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]

PLoS ONE, 2016
Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo, Marcelo Andrade Macêdo   +1 more
doaj   +1 more source

Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

Nanomaterials, 2016
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai, Wenbiao Qiu, Zecun Zeng, Shuying Cheng, Jinling Yu, Qiao Zheng   +5 more
doaj   +1 more source

Glucose-based resistive random access memory for transient electronics

Journal of Information Display, 2019
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim   +3 more
doaj   +1 more source

Atomistic Insights on the Full Operation Cycle of a HfO2-Based Resistive Random Access Memory Cell from Molecular Dynamics.

ACS Nano, 2021
We characterize the atomic processes that underlie forming, reset, and set in HfO2-based resistive random access memory (RRAM) cells through molecular dynamics (MD) simulations, using an extended charge equilibration method to describe external electric ...
M. Urquiza, Md Mahbubul Islam, A. V. van Duin, X. Cartoixà, A. Strachan   +4 more
semanticscholar   +1 more source

Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices

Memories - Materials, Devices, Circuits and Systems, 2023
Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored.
Shalu Saini, Anurag Dwivedi, Anil Lodhi, Arpit Khandelwal, Shree Prakash Tiwari   +4 more
doaj   +1 more source

Recent advances in resistive random access memory based on lead halide perovskite

InfoMat, 2021
Lead halide perovskites have attracted increasing attention in photovoltaic devices, light‐emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the
Jiayu Di, Jianhui Du, Zhenhua Lin, Shengzhong (Frank) Liu, Jianyong Ouyang, Jingjing Chang   +5 more
doaj   +1 more source

Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy

Advanced Intelligent Systems, 2022
Crossbars of resistive memories, or memristors, provide a road to reduce the energy consumption of artificial neural networks, by naturally implementing multiply accumulate operations, their most basic calculations.
E. Esmanhotto, T. Hirtzlin, Djohan Bonnet, N. Castellani, J. Portal, D. Querlioz, E. Vianello   +6 more
semanticscholar   +1 more source

Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays

APL Materials, 2018
Resistive random-access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-access memory, oxide random-access memory, and conductive ...
Scott H. Tan, Peng Lin, Hanwool Yeon, Shinhyun Choi, Yongmo Park, Jeehwan Kim   +5 more
doaj   +1 more source