Results 41 to 50 of about 3,876 (248)
Intracerebral Hemorrhage Induces Monocyte TNF Signaling in Patients That Is Suppressed by BAF312
ABSTRACT Objective Intracerebral hemorrhage (ICH) causes high morbidity and mortality, with neurotoxic inflammation driven by infiltrating monocytes. This study is an in‐depth longitudinal examination of the immune response during the first week of ICH in the presence and absence of the immunomodulatory drug BAF312 (Siponimod).
Jonathan Howard DeLong +10 more
wiley +1 more source
Carbon-based memristors for resistive random access memory and neuromorphic applications
As a typical representative of nanomaterials, carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties, multi-dimensionality, multi-hybridization methods ...
Fan Yang +5 more
doaj +1 more source
Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj +1 more source
Histopathological Evidence of Neurodegenerative Pathology in Epilepsy: A Systematic Review
ABSTRACT Epilepsy affects > 50 million people worldwide and is associated with a disproportionate burden of cognitive impairment. Emerging evidence suggests that neurodegenerative proteinopathies, particularly hyperphosphorylated tau (p‐tau) and amyloid‐β (Aβ), may contribute to cognitive dysfunction in people with epilepsy (PWE), even in the absence ...
Syeda Amrah Hashmi +7 more
wiley +1 more source
Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance.
Gang Cao +5 more
doaj +1 more source
A ZnTaOx Based Resistive Switching Random Access Memory [PDF]
The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of
Zheng, K. +5 more
openaire +1 more source
Claustrum Involvement in New Onset Refractory Status Epilepticus: A Systematic Review
ABSTRACT The claustrum sign is a distinctive neuroimaging finding characterized by bilateral T2/FLAIR hyperintensity of the claustrum, one of the most interconnected regions of the human brain. It was first described in new‐onset refractory status epilepticus (NORSE) and febrile infection–related epilepsy syndrome (FIRES).
Margherita Burani +5 more
wiley +1 more source
Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access
Jinhong Park +10 more
doaj +1 more source
Building machine‐readable vocabularies for materials science is slow, expert‐driven work. This study benchmarks 13 large language models on two of its first steps: finding candidate terms in engineering articles and deciding where they belong in a class hierarchy.
Thomas Bjarsch +3 more
wiley +1 more source
Resistive switching devices are candidates to be used as weight for the future hardware realization of neuronal networks. Herein, these resistive switches base on oxygen vacancy migration and can be toggled between different resistance states.
Carsten Funck +6 more
doaj +1 more source

