Results 61 to 70 of about 15,800,199 (248)
Diabetes‐Associated Cognitive Impairment: Pathophysiology and Emerging Therapies
ABSTRACT Diabetes‐associated cognitive impairment (DACI) is a common yet underrecognized condition, manifesting along a spectrum from mild cognitive impairment to dementia. DACI encompasses patients who develop vascular dementia (VaD) or Alzheimer's disease (AD) with diabetes as a risk factor; however, in certain patients, particularly those lacking ...
Osman Corbali +4 more
wiley +1 more source
Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature.
Shoou-Jinn Chang +4 more
core +1 more source
Resistive switching devices are candidates to be used as weight for the future hardware realization of neuronal networks. Herein, these resistive switches base on oxygen vacancy migration and can be toggled between different resistance states.
Carsten Funck +6 more
doaj +1 more source
ABSTRACT Objective Sleep disturbances have been implicated as a risk factor for developing Alzheimer's disease (AD), but evidence linking plasma AD biomarkers to sleep in cognitively unimpaired individuals remains limited. The present study examined associations between evening, morning, and overnight changes in plasma AD biomarkers and measures of ...
Cornelia Sauter +5 more
wiley +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
The effect of AC pulse engineering on the nonlinearity and reliability of selectorless resistive random access memory was investigated in order to implement a high-density cross-point array.
Hwang, H +5 more
core +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
A versatile compact model of resistive random-access memory (RRAM) [PDF]
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM).
Salahuddin, Sayeef +3 more
core +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Radiation Effects of Commercial Resistive Random Access Memories [PDF]
We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets.
Roche, Nicolas +9 more
core

